Power Switching N Channel Enhancement Mode MOSFET HUAYI HYG065N15NS1W with 150V Drain Source Voltage
Key Attributes
Model Number:
HYG065N15NS1W
Product Custom Attributes
Drain To Source Voltage:
150V
Current - Continuous Drain(Id):
165A
RDS(on):
6mΩ@10V,100A
Operating Temperature -:
-55℃~+175℃
Gate Threshold Voltage (Vgs(th)):
2V
Reverse Transfer Capacitance (Crss@Vds):
88pF@75V
Number:
1 N-channel
Input Capacitance(Ciss):
6.646nF
Pd - Power Dissipation:
375W
Gate Charge(Qg):
96nC@10V
Mfr. Part #:
HYG065N15NS1W
Package:
TO-247A-3L
Product Description
Product Overview
The HYG065N15NS1W is an N-Channel Enhancement Mode MOSFET designed for power switching applications. It features a high drain-source voltage of 150V and a continuous drain current of 165A, with a low on-state resistance of 6.0m (typ.) at VGS = 10V. This device is 100% avalanche tested, reliable, and rugged, with lead-free and green device options available, making it compliant with RoHS standards. It is suitable for use in Uninterruptible Power Supplies and other power switching circuits.
Product Attributes
- Brand: HYG (Huayi Microelectronics Co., Ltd.)
- Origin: China
- Certifications: RoHS Compliant, Lead-Free, Green Devices Available
- Package Type: TO-247A-3L
Technical Specifications
| Parameter | Symbol | Rating | Unit | Test Conditions |
|---|---|---|---|---|
| Absolute Maximum Ratings | ||||
| Drain-Source Voltage | VDSS | 150 | V | Tc=25C Unless Otherwise Noted |
| Gate-Source Voltage | VGSS | 20 | V | Tc=25C Unless Otherwise Noted |
| Maximum Junction Temperature | TJ | 175 | C | Tc=25C Unless Otherwise Noted |
| Storage Temperature Range | TSTG | -55 to 175 | C | Tc=25C Unless Otherwise Noted |
| Source Current-Continuous (Body Diode) | IS | 165 | A | Tc=25C, Mounted on Large Heat Sink |
| Pulsed Drain Current | IDM | 580 | A | Tc=25C, Pulse width limited by max. junction temperature |
| Continuous Drain Current | ID | 165 | A | Tc=25C |
| Continuous Drain Current | ID | 116 | A | Tc=100C |
| Maximum Power Dissipation | PD | 375 | W | Tc=25C |
| Maximum Power Dissipation | PD | 187.5 | W | Tc=100C |
| Thermal Resistance, Junction-to-Case | RJC | 0.40 | C/W | Tc=25C Unless Otherwise Noted |
| Thermal Resistance, Junction-to-Ambient | RJA | 57 | C/W | Tc=25C Unless Otherwise Noted, Surface mounted on FR-4 board |
| Single Pulsed-Avalanche Energy | EAS | 1134 | mJ | L=0.3mH, Limited by TJmax, starting TJ=25C, VDS=100V, VGS =10V |
| Electrical Characteristics | ||||
| Drain-Source Breakdown Voltage | BVDSS | 150 | V | VGS=0V, IDS=250A |
| Drain-to-Source Leakage Current | IDSS | 1.0 | A | VDS=150V,VGS=0V, TJ=125C |
| Gate Threshold Voltage | VGS(th) | 2-4 | V | VDS=VGS, IDS=250A |
| Gate-Source Leakage Current | IGSS | 100 | nA | VGS=20V,VDS=0V |
| Drain-Source On-State Resistance | RDS(ON) | 6.0-7.5 | m | VGS=10V,IDS=100A, Pulse test |
| Diode Forward Voltage | VSD | 0.93-1.3 | V | ISD=100A,VGS=0V, Pulse test |
| Reverse Recovery Time | trr | 141.7 | ns | ISD=100A,dISD/dt=100A/s, Pulse test |
| Reverse Recovery Charge | Qrr | 601.3 | nC | ISD=100A,dISD/dt=100A/s, Pulse test |
| Gate Resistance | RG | 2.6 | VGS=0V,VDS=0V,F=1 MHz | |
| Input Capacitance | Ciss | 6646 | pF | VGS=0V, VDS=75V, Frequency=1.0MHz |
| Output Capacitance | Coss | 888 | pF | VGS=0V, VDS=75V, Frequency=1.0MHz |
| Reverse Transfer Capacitance | Crss | 88 | pF | VGS=0V, VDS=75V, Frequency=1.0MHz |
| Turn-on Delay Time | td(ON) | 27.2 | ns | VDD=75V,RG=4, IDS=100A,VGS=10V |
| Turn-on Rise Time | Tr | 116.6 | ns | VDD=75V,RG=4, IDS=100A,VGS=10V |
| Turn-off Delay Time | td(OFF) | 55.4 | ns | VDD=75V,RG=4, IDS=100A,VGS=10V |
| Turn-off Fall Time | Tf | 108.6 | ns | VDD=75V,RG=4, IDS=100A,VGS=10V |
| Total Gate Charge | Qg | 96 | nC | VDS=75V, VGS=10V, ID=100A |
| Gate-Source Charge | Qgs | 39 | nC | VDS=75V, VGS=10V, ID=100A |
| Gate-Drain Charge | Qgd | 24 | nC | VDS=75V, VGS=10V, ID=100A |
2411220650_HUAYI-HYG065N15NS1W_C5187283.pdf
Related Products
digital transistor YANGJIE DTA114YE featuring built in resistors designed for automatic insertion and halogen free
Digital Transistors (Built-in Resistors)The DTA114YE is a digital transistor with built-in resistors, designed for surface mount applications and ideally suited for automatic insertion. It offers moisture sensitivity level 1 and is halogen-free, making it a reliable choice for various electronic ...
complementary mosfets featuring xnrusemi xr20g10 with n channel and p channel fast switching capabilities
XR20G10 N-Ch and P-Ch Fast Switching MOSFETs Product Description The XR20G10 is a high-performance complementary N-channel and P-channel MOSFET series featuring extreme high cell density. This design provides excellent RDS(ON) and gate charge characteristics, making it ideal for synchronous buck ...
Robust industrial IGBT module YANGJIE MG50HF12TLC1 with low VCEsat and high short circuit capability
Product OverviewThe MG50HF12TLC1 S-M392 is a high-performance IGBT module designed for inverter applications, AC/DC servo drive amplifiers, UPS systems, and soft switching welding machines. It features low VCE(sat) with Trench technology, a positive temperature coefficient for VCE(sat), high short ...
Digital Transistor YANGJIE UMH11N Dual NPN Type with Built In Bias Resistors and Surface Mount Design
Product OverviewThe UMH11N is a dual NPN digital transistor featuring built-in bias resistors, allowing for inverter circuit configuration without external input resistors. It is designed for surface mount applications and is ideally suited for automatic insertion. The epoxy meets UL-94 V-0 ...
Contact Our Experts And Get A Free Consultation!
Our mission is to offer "High Quality" & "Good Service" & "Fast Delivery" to help our clients to gain more profits.
