100V 60A N Channel Enhancement Mode MOSFET HUAYI HY3010D Low On Resistance Power Transistor
Key Attributes
Model Number:
HY3010D
Product Custom Attributes
Drain To Source Voltage:
100V
Current - Continuous Drain(Id):
60A
RDS(on):
12mΩ@10V
Operating Temperature -:
-55℃~+175℃
Gate Threshold Voltage (Vgs(th)):
4V@250uA
Type:
N-Channel
Reverse Transfer Capacitance (Crss@Vds):
230pF
Number:
1 N-channel
Output Capacitance(Coss):
361pF
Input Capacitance(Ciss):
3.197nF
Pd - Power Dissipation:
65W
Gate Charge(Qg):
81nC
Mfr. Part #:
HY3010D
Package:
TO-252-2L
Product Description
HY3010D/U/V N-Channel Enhancement Mode MOSFET
The HY3010D/U/V is a high-performance N-Channel Enhancement Mode MOSFET designed for various power applications. It features a high voltage rating of 100V and a continuous drain current of 60A, with a low on-state resistance of 10m (typ.) at VGS = 10V. This device is 100% avalanche tested, offering reliability and ruggedness. Available in Halogen Free and Green (RoHS Compliant) versions, it is suitable for portable equipment, battery-powered systems, DC-DC converters, and switching applications.
Product Attributes
- Brand: HUAYI
- Certifications: RoHS Compliant, Halogen Free
- Material: Lead-free (matte tin termination finish)
Technical Specifications
| Model | Package | VDSS (V) | ID (A) | RDS(ON) (m) @ VGS=10V | Avalanche Energy (mJ) @ L=0.5mH |
| HY3010D | TO-252-2L | 100 | 60 (Tc=25C) | 10 (typ.) | 355 |
| HY3010U | TO-251-3L | 100 | 60 (Tc=25C) | 10 (typ.) | 355 |
| HY3010V | TO-251-3S | 100 | 60 (Tc=25C) | 10 (typ.) | 355 |
Electrical Characteristics
| Symbol | Parameter | Test Conditions | Min | Typ. | Max | Unit |
| Static Characteristics | ||||||
| BVDSS | Drain-Source Breakdown Voltage | VGS=0V, IDS= 250A | 100 | - | - | V |
| IDSS | Drain-to-Source Leakage Current | VDS= 68V,VGS=0V | - | - | 1 | A |
| IDSS | Drain-to-Source Leakage Current | TJ=125C | - | - | 5 | A |
| VGS(th) | Gate Threshold Voltage | VDS=VGS, IDS= 250A | 2 | 3 | 4 | V |
| IGSS | Gate-Source Leakage Current | VGS=25V,VDS=0V | - | - | 100 | nA |
| RDS(ON) | Drain-Source On-State Resistance | VGS= 10V,IDS= 30A | - | 10 | 12 | m |
| Diode Characteristics | ||||||
| VSD | Diode Forward Voltage | ISD=30A,VGS=0V | - | 0.9 | 1.2 | V |
| trr | Reverse Recovery Time | ISD=30A,dISD/dt=100A/s | - | 30 | - | ns |
| Qrr | Reverse Recovery Charge | - | - | 50 | - | nC |
Dynamic Characteristics
| Symbol | Parameter | Test Conditions | Min | Typ. | Max | Unit |
| RG | Gate Resistance | VGS=0V,VDS=0V,F=1MHz | - | 1.14 | - | |
| Ciss | Input Capacitance | VGS=0V, VDS= 25V, Frequency=1.0MHz | - | 3197 | - | pF |
| Coss | Output Capacitance | - | - | 361 | - | pF |
| Crss | Reverse Transfer Capacitance | - | - | 230 | - | pF |
| td(ON) | Turn-on Delay Time | VDD= 50V,RG=3.3, IDS= 30A,VGS= 10V | - | 19 | - | ns |
| Tr | Turn-on Rise Time | - | - | 50 | - | ns |
| td(OFF) | Turn-off Delay Time | - | - | 62 | - | ns |
| Tf | Turn-off Fall Time | - | 68 | - | ns |
Gate Charge Characteristics
| Symbol | Parameter | Test Conditions | Min | Typ. | Max | Unit |
| Qg | Total Gate Charge | VDS = 80V, VGS= 10V, IDs= 30A | - | 81 | - | nC |
| Qgs | Gate-Source Charge | - | - | 13 | - | nC |
| Qgd | Gate-Drain Charge | - | - | 26 | - | nC |
2410122017_HUAYI-HY3010D_C2897491.pdf
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