Single N-Channel Enhancement Mode MOSFET HUAYI HYG180N10LS1B 100V 50A Low On Resistance Device
Key Attributes
Model Number:
HYG180N10LS1B
Product Custom Attributes
Drain To Source Voltage:
100V
Current - Continuous Drain(Id):
50A
Operating Temperature -:
-55℃~+175℃
RDS(on):
16.5mΩ@10V,25A
Gate Threshold Voltage (Vgs(th)):
3V
Reverse Transfer Capacitance (Crss@Vds):
22.8pF
Number:
1 N-channel
Pd - Power Dissipation:
93.7W
Input Capacitance(Ciss):
1.606nF
Gate Charge(Qg):
24.6nC@80V
Mfr. Part #:
HYG180N10LS1B
Package:
TO-263-2L
Product Description
Product Overview
The HYG180N10LS1P&B is a single N-Channel Enhancement Mode MOSFET designed for high-frequency point-of-load synchronous buck converters and power tool applications. It offers a 100V/50A rating with low on-state resistance (RDS(ON) = 16.5m typ. @ VGS = 10V) and is 100% avalanche tested for reliability and ruggedness. Lead-free devices are available, complying with RoHS standards.
Product Attributes
- Brand: HYG (Huayi Microelectronics Co., Ltd.)
- Origin: China
- Material: Lead-Free Devices Available (RoHS Compliant)
- Certifications: RoHS Compliant, IPC/JEDEC J-STD-020
Technical Specifications
| Part Number | Package | VDSS (V) | ID (A) | RDS(ON) (m) @ VGS=10V (typ.) | RDS(ON) (m) @ VGS=6V (typ.) | Avalanche Energy (mJ) |
| HYG180N10LS1P | TO-220FB-3L | 100 | 50 | 16.5 | 21 | 62.9 |
| HYG180N10LS1B | TO-263-2L | 100 | 50 | 16.5 | 21 | 62.9 |
2409302230_HUAYI-HYG180N10LS1B_C5121312.pdf
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