halogen free green compliant n channel enhancement mode mosfet 100 volt 322 amp HUAYI HYG016N10NS1B6
Key Attributes
Model Number:
HYG016N10NS1B6
Product Custom Attributes
Drain To Source Voltage:
100V
Current - Continuous Drain(Id):
322A
Operating Temperature -:
-55℃~+175℃
RDS(on):
1.8mΩ@10V,100A
Gate Threshold Voltage (Vgs(th)):
4V@250uA
Type:
N-Channel
Reverse Transfer Capacitance (Crss@Vds):
227pF
Number:
1 N-channel
Input Capacitance(Ciss):
13.9nF
Pd - Power Dissipation:
375W
Output Capacitance(Coss):
5.35nF
Gate Charge(Qg):
220nC@10V
Mfr. Part #:
HYG016N10NS1B6
Package:
TO-263-6L
Product Description
HYG016N10NS1B6 N-Channel Enhancement Mode MOSFET
The HYG016N10NS1B6 is a 100V/322A N-Channel Enhancement Mode MOSFET featuring low on-state resistance (RDS(ON)=1.5m typ. @ VGS=10V), 100% avalanche tested, and a reliable, rugged design. It is available in Halogen-Free and Green (RoHS Compliant) versions. This MOSFET is suitable for applications such as energy storage, battery protection, and battery-operated tools.
Product Attributes
- Brand: HYG
- Model: HYG016N10NS1B6
- Package: TO-263-6L
- Certifications: RoHS Compliant, Halogen-Free, Green Devices Available
- Termination Finish: 100% matte tin plate
Technical Specifications
| Parameter | Symbol | Test Conditions | Min | Typ. | Max | Unit |
| Absolute Maximum Ratings | ||||||
| Drain-Source Voltage | VDSS | Tc=25C Unless Otherwise Noted | 100 | V | ||
| Gate-Source Voltage | VGSS | 20 | V | |||
| Junction Temperature Range | TJ | -55 | 175 | C | ||
| Storage Temperature Range | TSTG | -55 | 175 | C | ||
| Source Current-Continuous(Body Diode) | IS | Tc=25C Mounted on Large Heat Sink | 322 | A | ||
| Pulsed Drain Current | IDM | Tc=25C * | 1288 | A | ||
| Continuous Drain Current | ID | Tc=25C | 322 | A | ||
| Continuous Drain Current | ID | Tc=100C | 228 | A | ||
| Maximum Power Dissipation | PD | Tc=25C | 375 | W | ||
| Maximum Power Dissipation | PD | Tc=100C | 187.5 | W | ||
| Thermal Resistance, Junction-to-Case | RJC | 0.4 | C/W | |||
| Thermal Resistance, Junction-to-Ambient | RJA | ** | 40 | C/W | ||
| Single Pulsed-Avalanche Energy | EAS | *** L=0.3mH | 1610 | mJ | ||
| Static Characteristics | ||||||
| Drain-Source Breakdown Voltage | BVDSS | VGS=0V,IDS=250A | 100 | - | - | V |
| Drain-to-Source Leakage Current | IDSS | VDS=100V,VGS=0V | - | 1.0 | A | |
| Drain-to-Source Leakage Current | IDSS | TJ=125C | - | 50 | A | |
| Gate Threshold Voltage | VGS(th) | VDS=VGS, IDS=250A | 2 | 3 | 4 | V |
| Gate-Source Leakage Current | IGSS | VGS=20V,VDS=0V | - | 100 | nA | |
| Drain-Source On-State Resistance | RDS(ON) | VGS=10V,IDS=100A * | 1.5 | 1.8 | m | |
| Diode Characteristics | ||||||
| Diode Forward Voltage | VSD | ISD=100A,VGS=0V * | 0.86 | 1.2 | V | |
| Reverse Recovery Time | trr | ISD=100A,dISD/dt=100A/s | 105 | - | ns | |
| Reverse Recovery Charge | Qrr | 196 | - | nC | ||
| Dynamic Characteristics | ||||||
| Gate Resistance | RG | VGS=0V,VDS=0V,F=500KHz | 1.2 | - | ||
| Input Capacitance | Ciss | VGS=0V, VDS=25V, Frequency=500KHz | 13900 | - | pF | |
| Output Capacitance | Coss | VGS=0V, VDS=25V, Frequency=500KHz | 5350 | - | pF | |
| Reverse Transfer Capacitance | Crss | VGS=0V, VDS=25V, Frequency=500KHz | 227 | - | pF | |
| Turn-on Delay Time | td(ON) | VDD=50V,RG=2.5, IDS=100A,VGS=10V | 29 | - | ns | |
| Turn-on Rise Time | Tr | VDD=50V,RG=2.5, IDS=100A,VGS=10V | 58 | - | ns | |
| Turn-off Delay Time | td(OFF) | VDD=50V,RG=2.5, IDS=100A,VGS=10V | 115 | - | ns | |
| Turn-off Fall Time | Tf | VDD=50V,RG=2.5, IDS=100A,VGS=10V | 88 | - | ns | |
| Gate Charge Characteristics | ||||||
| Total Gate Charge | Qg | VDS=80V, VGS=10V, ID=100A | 220 | - | nC | |
| Gate-Source Charge | Qgs | VDS=80V, VGS=10V, ID=100A | 78 | - | nC | |
| Gate-Drain Charge | Qgd | VDS=80V, VGS=10V, ID=100A | 50 | - | nC | |
2410121251_HUAYI-HYG016N10NS1B6_C19268963.pdf
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