N Channel Enhancement Mode MOSFET HUAYI HY5608W with Low RDS ON and RoHS Compliant Lead Free Versions
Key Attributes
Model Number:
HY5608W
Product Custom Attributes
Drain To Source Voltage:
80V
Current - Continuous Drain(Id):
360A
Operating Temperature -:
-40℃~+175℃
RDS(on):
2mΩ@10V
Gate Threshold Voltage (Vgs(th)):
4V@250uA
Type:
N-Channel
Reverse Transfer Capacitance (Crss@Vds):
853pF
Number:
1 N-channel
Output Capacitance(Coss):
1.714nF
Input Capacitance(Ciss):
14.715nF
Pd - Power Dissipation:
500W
Gate Charge(Qg):
365nC@10V
Mfr. Part #:
HY5608W
Package:
TO-247A-3L
Product Description
HY5608W/A N-Channel Enhancement Mode MOSFET
The HY5608W/A is an N-Channel Enhancement Mode MOSFET designed for power management in inverter systems and switching applications. It offers high performance with a voltage rating of 80V and a continuous drain current of 360A (TC=25C). Key advantages include low on-state resistance (RDS(ON)=1.5 m typ. @ VGS=10V), reliability, and ruggedness. This product is available in lead-free and green (RoHS compliant) versions.
Product Attributes
- Brand: HY5608
- Origin: HUAYI
- Certifications: RoHS Compliant, Lead Free
Technical Specifications
| Parameter | Rating | Unit | Conditions |
| Absolute Maximum Ratings | |||
| Drain-Source Voltage (VDSS) | 80 | V | |
| Gate-Source Voltage (VGSS) | 25 | V | |
| Maximum Junction Temperature (TJ) | 175 | C | |
| Storage Temperature Range (TSTG) | -55 to 175 | C | |
| Diode Continuous Forward Current (IS) | 360 | A | TC=25C, Mounted on Large Heat Sink |
| Continuous Drain Current (ID) | 360 | A | TC=25C |
| Continuous Drain Current (ID) | 248 | A | TC=100C |
| Maximum Power Dissipation (PD) | 500 | W | TC=25C |
| Maximum Power Dissipation (PD) | 250 | W | TC=100C |
| Thermal Resistance-Junction to Case (RJC) | 0.3 | C/W | |
| Thermal Resistance-Junction to Ambient (RJA) | 40 | C/W | Mounted on minimum pad |
| Avalanche Energy (EAS) | 2829 | mJ | L=0.5mH |
| Electrical Characteristics | |||
| Drain-Source Breakdown Voltage (BVDSS) | 80 | V | VGS=0V, IDS=250A |
| Zero Gate Voltage Drain Current (IDSS) | 1 | A | VDS=80V, VGS=0V, TJ=85C |
| Gate Threshold Voltage (VGS(th)) | 2.0 - 4.0 | V | VDS=VGS, IDS=250A |
| Gate Leakage Current (IGSS) | 100 | nA | VGS=25V, VDS=0V |
| Drain-Source On-state Resistance (RDS(ON)) | 1.5 | m | VGS=10V, IDS=180A (typ.) |
| Diode Forward Voltage (VSD) | 0.8 - 1.3 | V | ISD=180A, VGS=0V |
| Reverse Recovery Time (trr) | 50 | ns | ISD=180A, dISD/dt=100A/s |
| Reverse Recovery Charge (Qrr) | 80 | nC | ISD=180A, dISD/dt=100A/s |
| Dynamic Characteristics | |||
| Input Capacitance (Ciss) | 14715 | pF | VGS=0V, VDS=25V, Frequency=1.0MHz |
| Output Capacitance (Coss) | 1714 | pF | VGS=0V, VDS=25V, Frequency=1.0MHz |
| Reverse Transfer Capacitance (Crss) | 853 | pF | VGS=0V, VDS=25V, Frequency=1.0MHz |
| Turn-on Delay Time (td(ON)) | 60 | ns | VDD=40V, RG=6, IDS=180A, VGS=10V |
| Turn-on Rise Time (Tr) | 88 | ns | VDD=40V, RG=6, IDS=180A, VGS=10V |
| Turn-off Delay Time (td(OFF)) | 100 | ns | VDD=40V, RG=6, IDS=180A, VGS=10V |
| Turn-off Fall Time (Tf) | 47 | ns | VDD=40V, RG=6, IDS=180A, VGS=10V |
| Gate Charge Characteristics | |||
| Total Gate Charge (Qg) | 365 | nC | VDS=64V, VGS=10V, IDS=180A |
| Gate-Source Charge (Qgs) | 55 | nC | VDS=64V, VGS=10V, IDS=180A |
| Gate-Drain Charge (Qgd) | 141 | nC | VDS=64V, VGS=10V, IDS=180A |
Package Information
TO-3P-3L
| Package Type | Unit Quantity |
| TO-3P-3L Tube | 30 |
TO-247A-3L
| Package Type | Unit Quantity |
| TO-247A-3L Tube | 30 |
Classification Profile
Sn-Pb Eutectic Assembly
| Parameter | Min. | Max. | Unit | Conditions |
| Preheat & Soak Temperature (Tsmin) | 100 | 150 | C | |
| Time (Tsmin to Tsmax) (ts) | 60 | 120 | seconds | |
| Liquidous temperature (TL) | 183 | C | ||
| Time at liquidous (tL) | 60 | 150 | seconds | |
| Peak package body Temperature (Tp) | See Table 1 | C | ||
| Time (tP) | 20** | seconds | within 5C of Tp | |
| Average ramp-down rate (Tp to Tsmax) | 6 | C/second | max. | |
| Time 25C to peak temperature | 6 | minutes | max. |
Pb-Free Assembly
| Parameter | Min. | Max. | Unit | Conditions |
| Preheat & Soak Temperature (Tsmin) | 150 | 200 | C | |
| Time (Tsmin to Tsmax) (ts) | 60 | 120 | seconds | |
| Liquidous temperature (TL) | 217 | C | ||
| Time at liquidous (tL) | 60 | 150 | seconds | |
| Peak package body Temperature (Tp) | See Table 2 | C | ||
| Time (tP) | 30** | seconds | within 5C of Tp | |
| Average ramp-down rate (Tp to Tsmax) | 6 | C/second | max. | |
| Time 25C to peak temperature | 8 | minutes | max. |
Reliability Test Program
| Test item | Method | Description |
| SOLDERABILITY | JESD-22, B102 | 5 Sec, 245C |
| HTRB | JESD-22, A108 | 168Hrs /500Hrs /1000Hrs, Bias @ 150C |
| PCT | JESD-22, A102 | 96Hrs, 100%RH, 2atm, 121C |
| TCT | JESD-22, A104 | 500 Cycles, -55C~150C |
2410121738_HUAYI-HY5608W_C2760540.pdf
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