Insulated Gate Bipolar Transistor HXY MOSFET FGH60N60SFDTU HXY for in UPS and Motor Drive Systems
Key Attributes
Model Number:
FGH60N60SFDTU-HXY
Product Custom Attributes
Pd - Power Dissipation:
250W
Td(off):
124ns
Td(on):
24ns
Collector-Emitter Breakdown Voltage (Vces):
650V
Reverse Transfer Capacitance (Cres):
93pF
IGBT Type:
FS (Field Stop)
Gate-Emitter Threshold Voltage (Vge(th)@Ic):
4.3V@1mA
Operating Temperature:
-55℃~+175℃
Gate Charge(Qg):
183nC@15V
Reverse Recovery Time(trr):
136ns
Switching Energy(Eoff):
1.2mJ
Turn-On Energy (Eon):
1.4mJ
Input Capacitance(Cies):
3.356nF
Pulsed Current- Forward(Ifm):
200A
Output Capacitance(Coes):
179pF
Mfr. Part #:
FGH60N60SFDTU-HXY
Package:
TO-247
Product Description
FGH60N60SFDTU Insulated Gate Bipolar Transistor
The FGH60N60SFDTU is an Insulated Gate Bipolar Transistor (IGBT) developed using advanced Trench and Field Stop (T-FS) technology. This technology enhances performance by reducing conduction losses, improving switching characteristics, and increasing avalanche energy. It is designed for applications requiring high reliability and ruggedness, including UPS, motor drives, boost converters, and portable power stations.
Product Attributes
- Brand: HUAXUANYANG HXY ELECTRONICS CO.,LTD
- Model: FGH60N60SFDTU
- Package Type: TO-247
- Certifications: Halogen Free and Green Devices Available (RoHS Compliant)
- Origin: Shenzhen HuaXuanYang Electronics CO.,LTD
Technical Specifications
| Parameter | Value | Unit | Description |
|---|---|---|---|
| Absolute Ratings | |||
| VCES | 650 | V | Collector-Emitter Voltage |
| IC @TC=25C | 100 | A | Collector Current |
| IC @TC=100C | 60 | A | Collector Current |
| ICM | 200 | A | Pulsed Collector Current, tp limited by TJmax |
| IF @TC=25C | 100 | A | Diode Continuous Forward Current |
| IF @TC=100C | 60 | A | Diode Continuous Forward Current |
| IFM | 200 | A | Diode Maximum Forward Current, limited by TJmax |
| VGES | 30 | V | Gate-Emitter Voltage |
| tSC | 8 | s | Short circuit withstand time VGE=15V, VCC400V, allowed number of short circuits<1000,times between short circuits1.0s,TJ175C |
| PD @TC=25C | 250 | W | Power Dissipation |
| TJmax, Tstg | 55 to 175 | Operating Junction and Storage Temperature Range | |
| TL | 260 | Maximum Temperature for Soldering | |
| Thermal Characteristics | |||
| RJC (IGBT) | 0.60 | /W | Junction-to-Case (IGBT) |
| RJC (Diode) | 0.55 | /W | Junction-to-Case (Diode) |
| RJA | 40 | /W | Junction-to-Ambient |
| Electrical Characteristics (at TC = 25C, unless otherwise specified) | |||
| VCE(sat) typ | 1.65 | V | Collector-Emitter Saturation Voltage (VGE=15V, IC=60A) |
| VGE(TH) | 4.3 - 6.3 | V | Gate Threshold Voltage (VCE=VGE, IC=1mA) |
| VF | 1.65 - 2.05 | V | Diode Forward Voltage (IF=50A) |
| ICES | -- | A | Collector-Emitter Leakage Current (VCE=650V, VGE=0V) (Max: 10) |
| IGES(F) | -- | nA | Gate-Emitter Forward Leakage Current (VGE=+20V) (Max: 200) |
| IGES(R) | -- | nA | Gate-Emitter Reverse Leakage Current (VGE=-20V) (Max: -200) |
| Dynamic Characteristics | |||
| Cies | -- | pF | Input Capacitance (VGE=0V, VCE=25V, f=1.0MHz) (Typ: 3356) |
| Coes | -- | pF | Output Capacitance (Typ: 179) |
| Cres | -- | pF | Reverse Transfer Capacitance (Typ: 93) |
| Qg | -- | nC | Gate charge (VCC=520V, ICE=60A, VGE=15V) (Typ: 183) |
| Qge | -- | nC | Gate-emitter charge (Typ: 26) |
| Qgc | -- | nC | Gate-collector charge (Typ: 83) |
| IGBT Switching Characteristics (at TJ=25) | |||
| td(on) | -- | ns | Turn-on Delay Time (IC=60A, VCC=400V, VGE=15V, Rg=5, Inductive Load) (Typ: 24) |
| tr | -- | ns | Rise Time (Typ: 88) |
| td(off) | -- | ns | Turn-Off Delay Time (Typ: 124) |
| tf | -- | ns | Fall Time (Typ: 73) |
| Eon | -- | mJ | Turn-On Switching Loss (Typ: 1.40) |
| Eoff | -- | mJ | Turn-Off Switching Loss (Typ: 1.20) |
| Ets | -- | mJ | Total Switching Loss (Typ: 2.60) |
| IGBT Switching Characteristics (at TJ=175) | |||
| td(on) | -- | ns | Turn-on Delay Time (IC=60A, VCC=400V, VGE=15V, Rg=5, Inductive Load) (Typ: 30) |
| tr | -- | ns | Rise Time (Typ: 95) |
| td(off) | -- | ns | Turn-Off Delay Time (Typ: 152) |
| tf | -- | ns | Fall Time (Typ: 67) |
| Eon | -- | mJ | Turn-On Switching Loss (Typ: 1.62) |
| Eoff | -- | mJ | Turn-Off Switching Loss (Typ: 1.50) |
| Ets | -- | mJ | Total Switching Loss (Typ: 3.12) |
| Diode Characteristics (at TJ=25) | |||
| Trr | -- | ns | Reverse Recovery Time (IF=60A, VCC=400V, di/dt=200A/s) (Typ: 136) |
| Qrr | -- | nC | Reverse Recovery Charge (Typ: 350) |
| Irrm | -- | A | Reverse Recovery Current (Typ: 6.9) |
| Diode Characteristics (at TJ=175) | |||
| Trr | -- | ns | Reverse Recovery Time (IF=60A, VCC=400V, di/dt=200A/s) (Typ: 183) |
| Qrr | -- | nC | Reverse Recovery Charge (Typ: 560) |
| Irrm | -- | A | Reverse Recovery Current (Typ: 7.8) |
2509181738_HXY-MOSFET-FGH60N60SFDTU-HXY_C49003411.pdf
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