HUAYI HYG006N04LS1B6 Single N Channel MOSFET with Avalanche Tested Reliability and Low On Resistance
Key Attributes
Model Number:
HYG006N04LS1B6
Product Custom Attributes
Drain To Source Voltage:
40V
Current - Continuous Drain(Id):
530A
Operating Temperature -:
-55℃~+175℃
RDS(on):
0.55mΩ@10V,80A
Gate Threshold Voltage (Vgs(th)):
1.7V
Reverse Transfer Capacitance (Crss@Vds):
182pF
Number:
1 N-channel
Input Capacitance(Ciss):
15.58nF
Pd - Power Dissipation:
405W
Gate Charge(Qg):
233nC@10V
Mfr. Part #:
HYG006N04LS1B6
Package:
TO-263-6
Product Description
Product Overview
The HYG006N04LS1B6 is a single N-Channel Enhancement Mode MOSFET from Hymexa, designed for high-performance applications. It features a low on-resistance of 0.55m (typ.) at VGS = 10V and 0.72m (typ.) at VGS = 4.5V, with a high continuous drain current of 530A. This MOSFET is 100% avalanche tested, reliable, and rugged, making it suitable for load switches and lithium battery protection boards.
Product Attributes
- Brand: Hymexa
- Origin: China
- Certifications: RoHS compliant, Halogen-Free
Technical Specifications
| Symbol | Parameter | Test Conditions | Min | Typ. | Max | Unit |
| Absolute Maximum Ratings | ||||||
| VDSS | Drain-Source Voltage | - | - | 40 | V | |
| VGSS | Gate-Source Voltage | - | - | ±20 | V | |
| TJ | Junction Temperature Range | -55 | - | 175 | ||
| TSTG | Storage Temperature Range | -55 | - | 175 | ||
| ID | Continuous Drain Current | Tc=25 | - | - | 530 | A |
| ID | Continuous Drain Current | Tc=100 | - | - | 375 | A |
| IDM | Pulsed Drain Current | Tc=25 | - | - | 2120 | A |
| PD | Maximum Power Dissipation | Tc=25 | - | - | 405 | W |
| PD | Maximum Power Dissipation | Tc=100 | - | - | 202 | W |
| RJC | Thermal Resistance, Junction-to-Case | - | 0.37 | - | /W | |
| RJA | Thermal Resistance, Junction-to-Ambient | ** | - | 45 | - | /W |
| EAS | Single Pulsed-Avalanche Energy | *** L=1mH | - | 2302 | - | mJ |
| Electrical Characteristics | ||||||
| BVDSS | Drain-Source Breakdown Voltage | VGS=0V,IDS=250A | 40 | - | - | V |
| IDSS | Drain-to-Source Leakage Current | VDS=40V,VGS=0V | - | - | 1 | μA |
| IDSS | Drain-to-Source Leakage Current | TJ=125 | - | - | 50 | μA |
| VGS(th) | Gate Threshold Voltage | VDS=VGS, IDS=250A | 1.1 | 1.7 | 2.5 | V |
| IGSS | Gate-Source Leakage Current | VGS=±20V,VDS=0V | - | - | ±100 | nA |
| RDS(ON) | Drain-Source On-State Resistance | VGS=10V,IDS=80A | - | 0.55 | 0.72 | mΩ |
| RDS(ON) | Drain-Source On-State Resistance | VGS=4.5V,IDS=80A | - | 0.72 | 0.9 | mΩ |
| VSD* | Diode Forward Voltage | ISD=80A,VGS=0V | - | 0.78 | 1.2 | V |
| trr | Reverse Recovery Time | ISD=40A,dISD/dt=100A/μs | - | 78 | - | ns |
| Qrr | Reverse Recovery Charge | - | 142 | - | nC | |
| Dynamic Characteristics | ||||||
| RG | Gate Resistance | VGS=0V,VDS=0V,F=1MHz | - | 0.89 | - | Ω |
| Ciss | Input Capacitance | VGS=0V, VDS=25V, Frequency=100kHz | - | 15580 | - | pF |
| Coss | Output Capacitance | - | 3166 | - | pF | |
| Crss | Reverse Transfer Capacitance | - | 182 | - | pF | |
| td(ON) | Turn-on Delay Time | VDD=20V;IDS=40A; VGS=10V; RG=2.5Ω | - | 25.2 | - | ns |
| Tr | Turn-on Rise Time | - | 81.6 | - | ns | |
| td(OFF) | Turn-off Delay Time | - | 135 | - | ns | |
| Tf | Turn-off Fall Time | - | 106 | - | ns | |
| Gate Charge Characteristics | ||||||
| Qg | Total Gate Charge | VDS=32V;ID=80A; VGS=10V | - | 233 | - | nC |
| Qg | Total Gate Charge | VDS=32V;ID=80A; VGS=4.5V | - | 109 | - | nC |
| Qgs | Gate-Source Charge | - | 51.4 | - | nC | |
| Qgd | Gate-Drain Charge | - | 37.3 | - | nC | |
2410121314_HUAYI-HYG006N04LS1B6_C4555912.pdf
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