Single P Channel Enhancement Mode MOSFET HUAYI HYG350P13NA1B for Power Applications and Networking
Key Attributes
Model Number:
HYG350P13NA1B
Product Custom Attributes
Drain To Source Voltage:
125V
Current - Continuous Drain(Id):
39A
RDS(on):
43mΩ@10V
Operating Temperature -:
-55℃~+175℃
Gate Threshold Voltage (Vgs(th)):
3V@250uA
Type:
P-Channel
Reverse Transfer Capacitance (Crss@Vds):
194.8pF
Number:
1 P-Channel
Output Capacitance(Coss):
285pF
Pd - Power Dissipation:
120W
Input Capacitance(Ciss):
4.118nF
Gate Charge(Qg):
79.4nC@10V
Mfr. Part #:
HYG350P13NA1B
Package:
TO-263-2
Product Description
Product Overview
The HYG350P13NA1B is a single P-Channel Enhancement Mode MOSFET designed for various power applications. It features a low on-resistance of 35m (typ.) at VGS = -10V, 100% avalanche testing for reliability, and a rugged construction. This device is available in lead-free and green (RoHS compliant) versions. Key applications include power tools, networking, and DC-DC power systems.
Product Attributes
- Brand: HYG (Huayi Microelectronics Co., Ltd.)
- Origin: China
- Material: Lead-Free and Green Devices Available (RoHS Compliant)
- Certifications: RoHS Compliant, Halogen Free
Technical Specifications
| Parameter | Symbol | Test Conditions | Min | Typ. | Max | Unit | |
| Absolute Maximum Ratings | |||||||
| Drain-Source Voltage | VDSS | Tc=25C Unless Otherwise Noted | -125 | V | |||
| Gate-Source Voltage | VGSS | 20 | V | ||||
| Maximum Junction Temperature | TJ | 175 | C | ||||
| Storage Temperature Range | TSTG | -55 | 175 | C | |||
| Source Current-Continuous(Body Diode) | IS | Tc=25C | -39 | A | |||
| Pulsed Drain Current | IDM | Tc=25C, pulse width limited by max.junction temperature | -150 | A | |||
| Continuous Drain Current | ID | Tc=25C | -39 | A | |||
| Continuous Drain Current | ID | Tc=100C | -27 | A | |||
| Maximum Power Dissipation | PD | Tc=25C | 120 | W | |||
| Maximum Power Dissipation | PD | Tc=100C | 60 | W | |||
| Thermal Resistance, Junction-to-Case | RJC | 1.25 | C/W | ||||
| Thermal Resistance, Junction-to-Ambient | RJA | Surface mounted on FR-4 board | 62 | C/W | |||
| Single Pulsed Avalanche Energy | EAS | L=0.3mH, Limited by TJmax, starting TJ=25C | 388.7 | mJ | |||
| Electrical Characteristics | |||||||
| Drain-Source Breakdown Voltage | BVDSS | VGS=0V, IDS=250A | -125 | V | |||
| Drain-to-Source Leakage Current | IDSS | VDS=-125V, VGS=0V | -1 | A | |||
| Drain-to-Source Leakage Current | IDSS | TJ=100C, VDS=-125V, VGS=0V | -50 | A | |||
| Gate Threshold Voltage | VGS(th) | VDS=VGS, IDS=-250A | -1.0 | -2.4 | -3.0 | V | |
| Gate-Source Leakage Current | IGSS | VGS=20V, VDS=0V | 100 | nA | |||
| Drain-Source On-State Resistance | RDS(ON) | VGS=-10V, IDS=-20A | 35 | 43 | m | ||
| Diode Characteristics | |||||||
| Diode Forward Voltage | VSD | ISD=-20A, VGS=0V | -0.84 | -1.3 | V | ||
| Reverse Recovery Time | trr | ISD=-20A, dISD/dt=100A/s | 35.6 | ns | |||
| Reverse Recovery Charge | Qrr | ISD=-20A, dISD/dt=100A/s | 58.2 | nC | |||
| Dynamic Characteristics | |||||||
| Gate Resistance | RG | VGS=0V, VDS=0V, F=1MHz | 3.0 | ||||
| Input Capacitance | Ciss | VGS=0V, VDS=-25V, Frequency=1.0MHz | 4118 | pF | |||
| Output Capacitance | Coss | VGS=0V, VDS=-25V, Frequency=1.0MHz | 285 | pF | |||
| Reverse Transfer Capacitance | Crss | VGS=0V, VDS=-25V, Frequency=1.0MHz | 194.8 | pF | |||
| Turn-on Delay Time | td(ON) | VDD=-62V, RG=4, IDS=-20A, VGS=-10V | 35.2 | ns | |||
| Turn-on Rise Time | Tr | VDD=-62V, RG=4, IDS=-20A, VGS=-10V | 101.2 | ns | |||
| Turn-off Delay Time | td(OFF) | VDD=-62V, RG=4, IDS=-20A, VGS=-10V | 35 | ns | |||
| Turn-off Fall Time | Tf | VDD=-62V, RG=4, IDS=-20A, VGS=-10V | 92.3 | ns | |||
| Gate Charge Characteristics | |||||||
| Total Gate Charge | Qg10V | VDS =-100V, VGS=-10V, ID=-20A | 79.4 | nC | |||
| Gate-Source Charge | Qgs | VDS =-100V, VGS=-10V, ID=-20A | 13.0 | nC | |||
| Gate-Drain Charge | Qgd | VDS =-100V, VGS=-10V, ID=-20A | 30.3 | nC | |||
2409302230_HUAYI-HYG350P13NA1B_C2986724.pdf
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