HYG210P06LQ1C2 MOSFET Single P Channel 60 Volt 40 Amp Low On Resistance for Switching Application
Key Attributes
Model Number:
HYG210P06LQ1C2
Product Custom Attributes
Drain To Source Voltage:
60V
Current - Continuous Drain(Id):
40A
Operating Temperature -:
-55℃~+175℃
RDS(on):
35mΩ@4.5V
Gate Threshold Voltage (Vgs(th)):
3V@250uA
Type:
P-Channel
Reverse Transfer Capacitance (Crss@Vds):
60pF
Number:
1 P-Channel
Output Capacitance(Coss):
123pF
Input Capacitance(Ciss):
3.679nF
Pd - Power Dissipation:
60W
Gate Charge(Qg):
18nC@10V
Mfr. Part #:
HYG210P06LQ1C2
Package:
PPAK-8L(5x6)
Product Description
Product Overview
The HYG210P06LQ1C2 is a single P-Channel Enhancement Mode MOSFET designed for switching applications and power management in DC/DC converters. It offers robust performance with a -60V/-40A rating, low on-resistance of 20m(typ.) at VGS = -10V, and 100% avalanche tested for reliability. This device is available in Halogen-free and Green (RoHS Compliant) versions, making it suitable for environmentally conscious designs.
Product Attributes
- Brand: HYG (HUAYI)
- Origin: Xi'an Huayi Microelectronics Co., Ltd.
- Material: Lead-free (RoHS Compliant), Halogen-free
- Certifications: RoHS Compliant, IPC/JEDEC J-STD-020 compliant for MSL classification
Technical Specifications
| Part Number | Feature | RDS(ON) Typ. @ VGS = -10V | RDS(ON) Typ. @ VGS = -4.5V | VDSS | ID (Tc=25C) | Application |
| HYG210P06LQ1C2 | Single P-Channel Enhancement Mode MOSFET, -60V/-40A, 100% Avalanche Tested, Halogen free and Green Devices Available | 20m | 26m | -60V | -40A | Switching Application, Power Management for DC/DC, Battery Protection |
Absolute Maximum Ratings (Tc=25C Unless Otherwise Noted)
| Symbol | Parameter | Rating | Unit |
| VDSS | Drain-Source Voltage | -60 | V |
| VGSS | Gate-Source Voltage | 20 | V |
| TJ | Junction Temperature Range | -55 to 175 | C |
| TSTG | Storage Temperature Range | -55 to 175 | C |
| IS | Source Current-Continuous(Body Diode) Tc=25C | -40 | A |
| IDM | Pulsed Drain Current * Tc=25C | -140 | A |
| ID | Continuous Drain Current Tc=25C | -40 | A |
| ID | Continuous Drain Current Tc=100C | -28 | A |
| PD | Maximum Power Dissipation Tc=25C | 60 | W |
| PD | Maximum Power Dissipation Tc=100C | 30 | W |
| RJC | Thermal Resistance, Junction-to-Case | 2.5 | C/W |
| RJA | Thermal Resistance, Junction-to-Ambient ** | 45 | C/W |
| EAS | Single Pulsed-Avalanche Energy *** L=0.3mH | 289 | mJ |
Electrical Characteristics (Tc =25C Unless Otherwise Noted)
| Symbol | Parameter | Test Conditions | Min | Typ. | Max | Unit |
| BVDSS | Drain-Source Breakdown Voltage | VGS=0V, IDS=-250uA | -60 | - | - | V |
| IDSS | Drain-to-Source Leakage Current | VDS=-60V, VGS=0V | - | - | -1 | uA |
| IDSS | Drain-to-Source Leakage Current TJ=125C | VDS=-60V, VGS=0V | - | - | -50 | V |
| VGS(th) | Gate Threshold Voltage | VDS=VGS, IDS=-250uA | -1.0 | -1.7 | -3.0 | V |
| IGSS | Gate-Source Leakage Current | VGS=20V,VDS=0V | - | - | 100 | nA |
| RDS(ON)* | Drain-Source On-state Resistance | VGS=-10V,ID= -20A | - | 20 | 25 | m |
| RDS(ON)* | Drain-Source On-state Resistance | VGS=-4.5V,ID= -20A | - | 26 | 35 | m |
| VSD* | Diode Forward Voltage | ISD= -20A,VGS=0V | - | -0.9 | -1.3 | V |
| trr | Reverse Recovery Time | ISD= -20A,dI/dt=100A/us | - | 28 | - | ns |
| Qrr | Reverse Recovery Charge | ISD= -20A,dI/dt=100A/us | - | 25 | - | nC |
Dynamic Characteristics (Tc =25C Unless Otherwise Noted)
| Symbol | Parameter | Test Conditions | Typ. | Unit |
| RG | Gate Resistance | VGS=0V,VDS=0V, Frequency=1.0MHz | 6.4 | |
| Ciss | Input Capacitance | VGS=0V, VDS=-25V, Frequency=1.0MHz | 3679 | pF |
| Coss | Output Capacitance | VGS=0V, VDS=-25V, Frequency=1.0MHz | 123 | pF |
| Crss | Reverse Transfer Capacitance | VGS=0V, VDS=-25V, Frequency=1.0MHz | 60 | pF |
| td(ON) | Turn-on Delay Time | VDD= -25V,RG=3, IDS= -20A,VGS=-10V | 11 | ns |
| Tr | Turn-on Rise Time | VDD= -25V,RG=3, IDS= -20A,VGS=-10V | 17 | ns |
| td(OFF) | Turn-off Delay Time | VDD= -25V,RG=3, IDS= -20A,VGS=-10V | 73 | ns |
| Tf | Turn-off Fall Time | VDD= -25V,RG=3, IDS= -20A,VGS=-10V | 31 | ns |
Gate Charge Characteristics
| Symbol | Parameter | Test Conditions | Typ. | Unit |
| Qg | Total Gate Charge | VDS = -48V, VGS= -10V ID= -20A | 90 | nC |
| Qgs | Gate-Source Charge | VDS = -48V, VGS= -10V ID= -20A | 6 | nC |
| Qgd | Gate-Drain Charge | VDS = -48V, VGS= -10V ID= -20A | 18 | nC |
2410121306_HUAYI-HYG210P06LQ1C2_C2687418.pdf
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