N Channel Enhancement Mode MOSFET HUAYI HYG012N03LR1B with Avalanche Tested and Rugged Construction
Key Attributes
Model Number:
HYG012N03LR1B
Product Custom Attributes
Drain To Source Voltage:
30V
Current - Continuous Drain(Id):
250A
Operating Temperature -:
-55℃~+175℃
RDS(on):
1.7mΩ@4.5V
Gate Threshold Voltage (Vgs(th)):
3V@250uA
Type:
N-Channel
Reverse Transfer Capacitance (Crss@Vds):
809pF
Number:
1 N-channel
Input Capacitance(Ciss):
8.123nF@0V
Pd - Power Dissipation:
187.5W
Gate Charge(Qg):
187.9nC@10V
Mfr. Part #:
HYG012N03LR1B
Package:
TO-263-2L
Product Description
HYG012N03LR1P/B N-Channel Enhancement Mode MOSFET
The HYG012N03LR1P/B is a high-performance N-Channel Enhancement Mode MOSFET designed for various applications. It features a low on-state resistance of 1.2 m (typ.) at VGS = 10V and 1.4 m (typ.) at VGS = 4.5V, 100% avalanche tested, and a reliable, rugged construction. This device is available in lead-free and green (RoHS compliant) options, making it suitable for battery management systems and other demanding applications.
Product Attributes
- Brand: HYMExa
- Origin: China
- Certifications: RoHS Compliant, Lead-Free, Green Devices Available
Technical Specifications
| Parameter | HYG012N03LR1P/B | Unit |
| Absolute Maximum Ratings | ||
| Drain-Source Voltage (VDSS) | 30 | V |
| Gate-Source Voltage (VGSS) | 20 | V |
| Junction Temperature Range (TJ) | -55 to 175 | C |
| Storage Temperature Range (TSTG) | -55 to 175 | C |
| Continuous Drain Current (ID) @ Tc=25C | 250 | A |
| Continuous Drain Current (ID) @ Tc=100C | 176 | A |
| Pulsed Drain Current (IDM) @ Tc=25C | 1000 | A |
| Maximum Power Dissipation (PD) @ Tc=25C | 187.5 | W |
| Maximum Power Dissipation (PD) @ Tc=100C | 93.5 | W |
| Thermal Resistance, Junction-to-Case (RJC) | 0.8 | C/W |
| Thermal Resistance, Junction-to-Ambient (RJA) ** | 62.5 | C/W |
| Single Pulsed-Avalanche Energy (EAS) *** | 880 | mJ |
| Electrical Characteristics | ||
| Drain-Source Breakdown Voltage (BVDSS) @ VGS=0V, IDS= 250A | 30 | V |
| Drain-to-Source Leakage Current (IDSS) @ VDS=30V,VGS=0V | 1 | A |
| Drain-to-Source Leakage Current (IDSS) @ TJ=125C | 50 | A |
| Gate Threshold Voltage (VGS(th)) @ VDS=VGS, IDS= 250A | 1.7 | V |
| Gate-Source Leakage Current (IGSS) @ VGS=20V,VDS=0V | 100 | nA |
| Drain-Source On-State Resistance (RDS(ON)) @ VGS= 10V,IDS= 40A | 1.2 | m |
| Drain-Source On-State Resistance (RDS(ON)) @ VGS= 4.5V,IDS= 40A | 1.4 | m |
| Diode Forward Voltage (VSD) @ ISD=40A,VGS=0V | 0.8 | V |
| Reverse Recovery Time (trr) @ ISD=20A,dISD/dt=100A/s | 34.2 | ns |
| Reverse Recovery Charge (Qrr) | 32.9 | nC |
| Input Capacitance (Ciss) @ VGS=0V, VDS= 25V, Frequency=1MHz | 8123 | pF |
| Output Capacitance (Coss) @ VGS=0V, VDS= 25V, Frequency=1MHz | 1156 | pF |
| Reverse Transfer Capacitance (Crss) @ VGS=0V, VDS= 25V, Frequency=1MHz | 809 | pF |
| Turn-on Delay Time (td(ON)) @ VDD= 15V,RG=4, IDS=20A,VGS= 10V | 21.1 | ns |
| Turn-on Rise Time (Tr) @ VDD= 15V,RG=4, IDS=20A,VGS= 10V | 76.6 | ns |
| Turn-off Delay Time (td(OFF)) @ VDD= 15V,RG=4, IDS=20A,VGS= 10V | 133.9 | ns |
| Turn-off Fall Time (Tf) @ VDD= 15V,RG=4, IDS=20A,VGS= 10V | 120.6 | ns |
| Total Gate Charge (Qg) @ VGS=10V, VDS = 24V, IDs= 40A | 187.9 | nC |
| Total Gate Charge (Qg) @ VGS=4.5V, VDS = 24V, IDs= 40A | 101.5 | nC |
| Gate-Source Charge (Qgs) @ VDS = 24V, IDs= 40A | 27.3 | nC |
| Gate-Drain Charge (Qgd) @ VDS = 24V, IDs= 40A | 58.3 | nC |
2409302203_HUAYI-HYG012N03LR1B_C2931343.pdf
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