Power Management N Channel MOSFET HUAYI HYG035N08NS2P Featuring Low RDS ON and Switching Performance
Key Attributes
Model Number:
HYG035N08NS2P
Product Custom Attributes
Drain To Source Voltage:
80V
Current - Continuous Drain(Id):
135A
Operating Temperature -:
-55℃~+175℃
RDS(on):
4mΩ@10V
Gate Threshold Voltage (Vgs(th)):
4V@250uA
Type:
N-Channel
Reverse Transfer Capacitance (Crss@Vds):
170pF
Number:
1 N-channel
Output Capacitance(Coss):
1.87nF
Input Capacitance(Ciss):
2.63nF
Pd - Power Dissipation:
150W
Gate Charge(Qg):
75nC@10V
Mfr. Part #:
HYG035N08NS2P
Package:
TO-220FB-3L
Product Description
Product Overview
The HYG035N08NS2P/B is an N-Channel Enhancement Mode MOSFET designed for switching applications, power management in inverter systems, and motor control. It features low on-resistance (RDS(ON)=3.5 m typ. @ VGS = 10V), 100% avalanche tested, and a reliable, rugged design. Lead-Free and Green devices are available, compliant with RoHS standards.
Product Attributes
- Brand: HYM (Huayi Microelectronics)
- Material: Silicon
- Certifications: RoHS Compliant, Lead-Free, Green (Halogen Free)
Technical Specifications
| Parameter | Symbol | Test Conditions | Min | Typ. | Max | Unit |
| Absolute Maximum Ratings | VDSS | Drain-Source Voltage | - | - | 80 | V |
| VGSS | Gate-Source Voltage | - | - | 20 | V | |
| TJ | Junction Temperature Range | -55 | - | 175 | C | |
| TSTG | Storage Temperature Range | -55 | - | 175 | C | |
| ID | Continuous Drain Current (Tc=25C) | - | - | 135 | A | |
| ID | Continuous Drain Current (Tc=100C) | - | - | 95.5 | A | |
| IDM | Pulsed Drain Current (Tc=25C) | - | - | 400 | A | |
| PD | Maximum Power Dissipation (Tc=25C) | - | - | 150 | W | |
| PD | Maximum Power Dissipation (Tc=100C) | - | - | 75 | W | |
| EAS | Single Pulsed-Avalanche Energy (L=0.3mH) | - | - | 362 | mJ | |
| Electrical Characteristics | BVDSS | Drain-Source Breakdown Voltage (VGS=0V,IDS= 250A) | 80 | - | - | V |
| IDSS | Drain-to-Source Leakage Current (VDS= 80V,VGS=0V) | - | - | 1 | A | |
| VGS(th) | Gate Threshold Voltage (VDS=VGS, IDS= 250A) | 2 | 3 | 4 | V | |
| IGSS | Gate-Source Leakage Current (VGS=20V,VDS=0V) | - | - | 100 | nA | |
| RDS(ON) | Drain-Source On-State Resistance (VGS= 10V,IDS=50A) | - | 3.5 | 4 | m | |
| VSD | Diode Forward Voltage (ISD=50A,VGS=0V) | - | 0.9 | 1.2 | V | |
| trr | Reverse Recovery Time (ISD=50A,dISD/dt=100A/s) | - | 51 | - | ns | |
| Dynamic Characteristics | RG | Gate Resistance (VGS=0V,VDS=0V,F=1MHz) | - | 1.8 | - | |
| Ciss | Input Capacitance (VGS=0V, VDS= 25V, Frequency=1.0MHz) | - | 2630 | - | pF | |
| Coss | Output Capacitance | - | 1870 | - | pF | |
| Crss | Reverse Transfer Capacitance | - | 170 | - | pF | |
| td(ON) | Turn-on Delay Time (VDD= 40V,RG=4.0, IDS= 50A,VGS= 10V) | - | 18 | - | ns | |
| Gate Charge Characteristics | Qg | Total Gate Charge (VDS = 64V, VGS= 10V, IDs= 50A) | - | 75 | - | nC |
| Qgs | Gate-Source Charge | - | 20 | - | nC | |
| Qgd | Gate-Drain Charge | - | 29 | - | nC |
2410121248_HUAYI-HYG035N08NS2P_C2857455.pdf
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