High Current N Channel MOSFET HUAYI HY3708P with 170A Drain Current and Avalanche Tested Reliability
Key Attributes
Model Number:
HY3708P
Product Custom Attributes
Drain To Source Voltage:
80V
Current - Continuous Drain(Id):
170A
Operating Temperature -:
-55℃~+175℃
RDS(on):
5mΩ@10V
Gate Threshold Voltage (Vgs(th)):
4V@250uA
Type:
N-Channel
Reverse Transfer Capacitance (Crss@Vds):
530pF
Number:
1 N-channel
Output Capacitance(Coss):
995pF
Input Capacitance(Ciss):
6.109nF
Pd - Power Dissipation:
288W
Gate Charge(Qg):
152nC@10V
Mfr. Part #:
HY3708P
Package:
TO-220FB-3
Product Description
Product Overview
The HY3708 is an N-Channel Enhancement Mode MOSFET designed for power management in inverter systems. It offers high performance with a voltage rating of 80V and a continuous drain current of 170A, featuring a low on-resistance of 3.8 m (typ.) at VGS=10V. This MOSFET is reliable, rugged, and available in lead-free and green device options, compliant with RoHS standards. It is 100% avalanche tested.
Product Attributes
- Brand: HUAYI
- Certifications: RoHS Compliant, Lead Free, Green Devices Available
- Material: Molding compounds/die attach materials and 100% matte tin plate finish (for lead-free products)
Technical Specifications
| Model | Package Type | VDSS (V) | ID (A) | RDS(ON) (m) | VGS(th) (V) | EAS (mJ) |
| HY3708P/M/B/PS/PM | TO-220FB-3L | 80 | 170 | 3.8 (typ. @ VGS=10V) | 2.0 - 4.0 | 660** |
| HY3708P/M/B/PS/PM | TO-220FB-3S | |||||
| HY3708P/M/B/PS/PM | TO-3PS-3L | |||||
| HY3708P/M/B/PS/PM | TO-3PM-3S | |||||
| HY3708P/M/B/PS/PM | TO-263-2L | 80 | 170 | 3.8 (typ. @ VGS=10V) | 2.0 - 4.0 | 1168*** |
2409302232_HUAYI-HY3708P_C2835639.pdf
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