Rugged Construction MOSFET HUAYI HYG011N04LS1C2 Suitable for DC DC Converters and Switching Circuits
Key Attributes
Model Number:
HYG011N04LS1C2
Product Custom Attributes
Drain To Source Voltage:
40V
Current - Continuous Drain(Id):
165A
Operating Temperature -:
-55℃~+175℃
RDS(on):
1.9mΩ@4.5V
Gate Threshold Voltage (Vgs(th)):
3V@250uA
Type:
N-Channel
Reverse Transfer Capacitance (Crss@Vds):
58pF
Number:
1 N-channel
Output Capacitance(Coss):
1.278nF
Input Capacitance(Ciss):
5.876nF
Pd - Power Dissipation:
75W
Gate Charge(Qg):
89nC@10V
Mfr. Part #:
HYG011N04LS1C2
Package:
DFN5x6-8
Product Description
Product Overview
The HYG011N04LS1C2 is a single N-Channel Enhancement Mode MOSFET designed for switching applications and power management in DC/DC converters. It features low on-resistance, 100% avalanche testing, and a reliable, rugged construction. Halogen-free options are available.
Product Attributes
- Brand: HYG (Huayi Microelectronics Co., Ltd.)
- Origin: China
- Material: Halogen-Free Devices Available (RoHS compliant)
- Certifications: RoHS
Technical Specifications
| Parameter | Test Conditions | Unit | Min | Typ. | Max |
| Absolute Maximum Ratings | |||||
| Drain-Source Voltage (VDSS) | V | 40 | |||
| Gate-Source Voltage (VGSS) | V | ±20 | |||
| Junction Temperature Range (TJ) | �b0;C | -55 | 175 | ||
| Storage Temperature Range (TSTG) | �b0;C | -55 | 175 | ||
| Source Current-Continuous (IS) | Tc=25�b0;C | A | 165 | ||
| Pulsed Drain Current (IDM) | Tc=25�b0;C | A | 660 | ||
| Continuous Drain Current (ID) | Tc=25�b0;C | A | 165 | ||
| Continuous Drain Current (ID) | Tc=100�b0;C | A | 116 | ||
| Maximum Power Dissipation (PD) | Tc=25�b0;C | W | 75 | ||
| Maximum Power Dissipation (PD) | Tc=100�b0;C | W | 37.5 | ||
| Thermal Resistance, Junction-to-Case (RθJC) | �b0;C/W | 2 | |||
| Thermal Resistance, Junction-to-Ambient (RθJA) | Surface mounted on FR-4 board | �b0;C/W | 45 | ||
| Single-Pulsed-Avalanche Energy (EAS) | L=0.3mH | mJ | 540 | ||
| Static Characteristics | |||||
| Drain-Source Breakdown Voltage (BVDSS) | VGS=0V,IDS=250µA | V | 40 | - | - |
| Drain-to-Source Leakage Current (IDSS) | VDS=40V,VGS=0V | µA | - | 1 | |
| Drain-to-Source Leakage Current (IDSS) | TJ=125�b0;C | µA | - | 50 | |
| Gate Threshold Voltage (VGS(th)) | VDS=VGS, IDS=250µA | V | 1.0 | 1.8 | 3.0 |
| Gate-Source Leakage Current (IGSS) | VGS=±20V,VDS=0V | nA | - | ±100 | |
| Drain-Source On-State Resistance (RDS(ON)) | VGS=10V,IDS=40A | mΩ | 1.1 | 1.4 | |
| Drain-Source On-State Resistance (RDS(ON)) | VGS=4.5V,IDS=40A | mΩ | 1.5 | 1.9 | |
| Diode Characteristics | |||||
| Diode Forward Voltage (VSD) | ISD=20A,VGS=0V | V | 0.75 | 1.2 | |
| Reverse Recovery Time (trr) | ISD=40A,dISD/dt=100A/µs | ns | 45 | - | |
| Reverse Recovery Charge (Qrr) | nC | 51 | - | ||
| Dynamic Characteristics | |||||
| Gate Resistance (RG) | VGS=0V,VDS=0V, Frequency=1.0MHz | Ω | 1.9 | - | |
| Input Capacitance (Ciss) | VGS=0V, VDS=25V, Frequency=1.0MHz | pF | 5876 | - | |
| Output Capacitance (Coss) | VGS=0V, VDS=25V, Frequency=1.0MHz | pF | 1278 | - | |
| Reverse Transfer Capacitance (Crss) | VGS=0V, VDS=25V, Frequency=1.0MHz | pF | 58 | - | |
| Turn-on Delay Time (td(ON)) | VDD=20V,RG=2.5Ω, IDS=40A,VGS=10V | ns | 15 | - | |
| Turn-on Rise Time (Tr) | VDD=20V,RG=2.5Ω, IDS=40A,VGS=10V | ns | 98 | - | |
| Turn-off Delay Time (td(OFF)) | VDD=20V,RG=2.5Ω, IDS=40A,VGS=10V | ns | 215 | - | |
| Turn-off Fall Time (Tf) | VDD=20V,RG=2.5Ω, IDS=40A,VGS=10V | ns | 99 | - | |
| Gate Charge Characteristics | |||||
| Total Gate Charge (Qg) | VDS =32V, ID=40A, VGS=10V | nC | 89 | - | |
| Total Gate Charge (Qg) | VDS =32V, ID=40A, VGS=4.5V | nC | 41 | - | |
| Gate-Source Charge (Qgs) | VDS =32V, ID=40A, VGS=10V | nC | 20 | - | |
| Gate-Drain Charge (Qgd) | VDS =32V, ID=40A, VGS=10V | nC | 14 | - | |
2410121306_HUAYI-HYG011N04LS1C2_C2911692.pdf
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