HYG800P10LR1D P Channel Enhancement Mode MOSFET with TO 252 2L Package and 75 Watt Power Dissipation
Key Attributes
Model Number:
HYG800P10LR1D
Product Custom Attributes
Drain To Source Voltage:
100V
Current - Continuous Drain(Id):
20A
Operating Temperature -:
-55℃~+175℃
RDS(on):
110mΩ@4.5V
Gate Threshold Voltage (Vgs(th)):
3V@250uA
Type:
P-Channel
Reverse Transfer Capacitance (Crss@Vds):
67pF
Number:
1 P-Channel
Output Capacitance(Coss):
111pF
Input Capacitance(Ciss):
3.273nF
Pd - Power Dissipation:
75W
Gate Charge(Qg):
42.6nC@10V
Mfr. Part #:
HYG800P10LR1D
Package:
TO-252-2L
Product Description
Product Overview
The HYG800P10LR1D/U/V is a P-Channel Enhancement Mode MOSFET designed for power management applications, particularly in DC/DC converters and load switching. It offers robust performance with a -100V drain-source voltage, -20A continuous drain current, and low on-resistance (RDS(ON) of 77m typ. at VGS = -10V). This device is 100% avalanche tested, reliable, rugged, and available in Halogen Free and Green versions, complying with RoHS standards.
Product Attributes
- Brand: Hymexa
- Origin: China
- Material: Halogen Free and Green Devices Available (RoHS Compliant)
- Certifications: RoHS Compliant
Technical Specifications
| Model | Package | VDSS (V) | ID (A) | RDS(ON) (m) @ VGS=-10V | RDS(ON) (m) @ VGS=-4.5V | ISM (A) | PD (W) @ Tc=25C | EAS (mJ) L=0.3mH |
| HYG800P10LR1D | TO-252-2L | -100 | -20 | 77 (typ.) | 86 (typ.) | -75 | 75 | 82.9 |
| HYG800P10LR1U | TO-251-3L | -100 | -20 | 77 (typ.) | 86 (typ.) | -75 | 75 | 82.9 |
| HYG800P10LR1V | TO-251-3S | -100 | -20 | 77 (typ.) | 86 (typ.) | -75 | 75 | 82.9 |
2409302203_HUAYI-HYG800P10LR1D_C2827249.pdf
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