N Channel Enhancement Mode MOSFET HUAYI HY3215W 150V 130A Low On Resistance TO 247A Package
Key Attributes
Model Number:
HY3215W
Product Custom Attributes
Drain To Source Voltage:
150V
Current - Continuous Drain(Id):
130A
Operating Temperature -:
-55℃~+175℃
RDS(on):
14mΩ@10V
Gate Threshold Voltage (Vgs(th)):
5V@250uA
Type:
N-Channel
Reverse Transfer Capacitance (Crss@Vds):
194pF
Number:
1 N-channel
Output Capacitance(Coss):
480pF
Input Capacitance(Ciss):
5.925nF
Pd - Power Dissipation:
349W
Gate Charge(Qg):
135nC@10V
Mfr. Part #:
HY3215W
Package:
TO-247A-3L
Product Description
Product Overview
The HY3215W is an N-Channel Enhancement Mode MOSFET designed for high-power applications. It features a 150V/130A rating, low on-resistance of 11.5m (typ.) at VGS=10V, and is 100% avalanche tested for reliability. Available in Halogen Free and Green (RoHS Compliant) versions, it is suitable for demanding applications such as Brushless Motor Drive and Electric Power Steering.
Product Attributes
- Brand: HY (Huayi Microelectronics)
- Package Type: TO-247A-3L
- Certifications: RoHS Compliant, Halogen Free
- Material: Lead-free (RoHS compliant) and halogen free
Technical Specifications
| Parameter | Symbol | Test Conditions | Min | Typ. | Max | Unit |
| Absolute Maximum Ratings | VDSS | Tc=25C Unless Otherwise Noted | - | - | 150 | V |
| VGSS | - | - | 25 | V | ||
| TJ | - | - | 175 | C | ||
| TSTG | - | -55 | 175 | C | ||
| ID | Tc=25C | - | - | 130 | A | |
| ID | Tc=100C | - | - | 93 | A | |
| PD | Tc=25C | - | - | 349 | W | |
| Electrical Characteristics | BVDSS | VGS=0V,IDS=250A | 150 | - | - | V |
| IDSS | VDS=150,VGS=0V | - | - | 1 | A | |
| VGS(th) | VDS=VGS, IDS=250A | 3 | 4 | 5 | V | |
| IGSS | VGS=25V,VDS=0V | - | - | 100 | nA | |
| RDS(ON) | VGS=10V,IDS=40A | - | 11.5 | 14 | m | |
| VSD | ISD=50A,VGS=0V | - | 0.8 | 1.2 | V | |
| trr | ISD=50A,dISD/dt=100A/s | - | 46 | - | ns | |
| Qrr | - | - | 98 | - | nC | |
| RG | VGS=0V,VDS=0V,F=1 MHz | - | 3.1 | - | ||
| Dynamic Characteristics | Ciss | VGS=0V, VDS=25V, Frequency=1.0MHz | - | 5925 | - | pF |
| Coss | - | - | 480 | - | pF | |
| Crss | - | - | 194 | - | pF | |
| td(ON) | VDD=75V,RG=3, IDS=50A,VGS=10V | - | 30 | - | ns | |
| tr | - | - | 40 | - | ns | |
| Gate Charge Characteristics | Qg | VDS =100V, VGS=10V ID=30A | - | 135 | - | nC |
| Qgs | - | - | 29 | - | nC | |
| Qgd | - | - | 48 | - | nC | |
| Thermal Characteristics | RJC | - | - | 0.43 | - | C/W |
| RJA | Surface Mounted on FR4 Board | - | 62.5 | - | C/W |
2410122027_HUAYI-HY3215W_C2965569.pdf
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