High Power MOSFET HUAYI HY4008P N Channel Enhancement Mode with Robust Electrical Characteristics
Key Attributes
Model Number:
HY4008P
Product Custom Attributes
Drain To Source Voltage:
80V
Current - Continuous Drain(Id):
200A
Operating Temperature -:
-
RDS(on):
3.5mΩ@10V,100A
Gate Threshold Voltage (Vgs(th)):
4V@250uA
Type:
N-Channel
Reverse Transfer Capacitance (Crss@Vds):
650pF
Number:
1 N-channel
Output Capacitance(Coss):
1.029nF
Input Capacitance(Ciss):
8.154nF
Pd - Power Dissipation:
345W
Gate Charge(Qg):
197nC@10V
Mfr. Part #:
HY4008P
Package:
TO-220FB-3L
Product Description
Product Overview
The HY4008P/M/B/PS/PM is an N-Channel Enhancement Mode MOSFET designed for power management in inverter systems and switching applications. It offers high performance with low on-resistance and a robust, reliable design. Available in various lead-free and green device options, it meets stringent environmental standards.
Product Attributes
- Brand: HUAYI
- Origin: China
- Material: Lead Free and Green Devices Available (RoHS Compliant)
- Certifications: RoHS Compliant
Technical Specifications
| Model | Package Type | Drain-Source Voltage (V) | Continuous Drain Current (A) | RDS(ON) (m) | Gate Threshold Voltage (V) | Max Junction Temperature (C) | Max Power Dissipation (W) |
| HY4008P | TO-220FB-3L | 80 | 144 (TC=100C) | 2.9 (typ.) @ VGS=10V | 2.0 - 4.0 | 175 | 173 (TC=100C) |
| HY4008M | TO-220FB-3S | 80 | 144 (TC=100C) | 2.9 (typ.) @ VGS=10V | 2.0 - 4.0 | 175 | 173 (TC=100C) |
| HY4008B | TO-263-2L | 80 | 144 (TC=100C) | 2.9 (typ.) @ VGS=10V | 2.0 - 4.0 | 175 | 173 (TC=100C) |
| HY4008PS | TO-3PS-3L | 80 | 144 (TC=100C) | 2.9 (typ.) @ VGS=10V | 2.0 - 4.0 | 175 | 173 (TC=100C) |
| HY4008PM | TO-3PM | 80 | 144 (TC=100C) | 2.9 (typ.) @ VGS=10V | 2.0 - 4.0 | 175 | 173 (TC=100C) |
2409302232_HUAYI-HY4008P_C110667.pdf
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