rugged mosfet transistor HUAYI HYG045P03LQ1D for power management dc dc converters motor control applications
Key Attributes
Model Number:
HYG045P03LQ1D
Product Custom Attributes
Drain To Source Voltage:
30V
Current - Continuous Drain(Id):
60A
Operating Temperature -:
-55℃~+175℃
Gate Threshold Voltage (Vgs(th)):
1V
Reverse Transfer Capacitance (Crss@Vds):
575pF@25V
Number:
1 P-Channel
Input Capacitance(Ciss):
7.66nF@25V
Pd - Power Dissipation:
60W
Mfr. Part #:
HYG045P03LQ1D
Package:
TO-252-2L
Product Description
Product Description
This MOSFET is designed for channel enhancement mode applications, offering reliable and rugged performance. It is available in Halogen-Free and Green Devices, RoHS Compliant options. Applications include power management in DC-DC converters, load switching, and motor control.
Product Attributes
- Brand: HUAYI
- Certifications: RoHS Compliant, Halogen Free, Green Device
- Material: Molding compounds, die attach material, matte tin plating
Technical Specifications
| Symbol | Parameter | Rating | Unit | Test Conditions | Min | Typ | Max |
| Absolute Maximum Ratings | |||||||
| VDSS | Drain Source Voltage | 200 | V | ||||
| VGSS | Gate Source Voltage | ±20 | V | ||||
| TJ | Junction Temperature Range | -55 to 150 | ℃ | Unless Otherwise Noted | |||
| TSTG | Storage Temperature Range | -55 to 150 | ℃ | ||||
| ID | Drain Current Continuous | 30 | A | TC = 25℃ | |||
| IDM | Pulsed Drain Current | 120 | A | TC = 25℃ | |||
| ID | Continuous Drain Current | 30 | A | TC = 100℃ | |||
| PD | Maximum Power Dissipation | 125 | W | TC = 25℃ | |||
| RthJC | Thermal Resistance Junction to Case | 1.0 | ℃/W | ||||
| RthJA | Thermal Resistance Junction to Ambient | 40 | ℃/W | Surface mounted on FR-4 board | |||
| EAS | Single Pulsed Avalanche Energy | 500 | mJ | L = 10mH | |||
| Electrical Characteristics (TC = 25℃ Unless Otherwise Noted) | |||||||
| BVDSS | Drain Source Breakdown Voltage | 200 | V | VGS = 0V, ID = 250µA | |||
| IDSS | Drain to Source Leakage Current | 1 | µA | VDS = 200V, VGS = 0V | 1 | ||
| IDSS | Drain to Source Leakage Current | 1 | µA | VDS = 150V, VGS = 0V | 1 | ||
| VGS(th) | Gate Threshold Voltage | 2 | V | VDS = 10V, IDS = 250µA | 1.5 | 2.5 | |
| IGSS | Gate Source Leakage Current | ±10 | nA | VGS = ±20V, VDS = 0V | ±10 | ||
| RDS(ON) | Drain Source On State Resistance | 1.2 | mΩ | VGS = 10V, ID = 30A | 0.9 | 1.2 | |
| RDS(ON) | Drain Source On State Resistance | 1.5 | mΩ | VGS = 10V, ID = 30A | 1.2 | 1.5 | |
| VSD | Diode Forward Voltage | 1.3 | V | ISD = 30A, VGS = 0V | 1.3 | ||
| trr | Reverse Recovery Time | 50 | ns | ISD = 15A, d(IR)/dt = 100A/µs | 50 | ||
| Qrr | Reverse Recovery Charge | 100 | nC | ISD = 15A, d(IR)/dt = 100A/µs | 100 | ||
| Electrical Characteristics (Cont.) (TC = 25℃ Unless Otherwise Noted) | |||||||
| RG | Gate Resistance | 100 | Ω | VGS = 10V, VDS = 10V, f = 1MHz | 100 | ||
| Ciss | Input Capacitance | 3500 | pF | VGS = 10V, VDS = 25V, f = 1MHz | 3100 | ||
| Coss | Output Capacitance | 700 | pF | VGS = 10V, VDS = 25V, f = 1MHz | 550 | ||
| Crss | Reverse Transfer Capacitance | 300 | pF | VGS = 10V, VDS = 25V, f = 1MHz | 250 | ||
| td(on) | Turn-on Delay Time | 25 | ns | VDD = 100V, RL = 50Ω, ID = 15A, VGS = 10V | 15 | ||
| tr | Turn-on Rise Time | 50 | ns | VDD = 100V, RL = 50Ω, ID = 15A, VGS = 10V | 35 | ||
| td(off) | Turn-off Delay Time | 50 | ns | VDD = 100V, RL = 50Ω, ID = 15A, VGS = 10V | 40 | ||
| tf | Turn-off Fall Time | 30 | ns | VDD = 100V, RL = 50Ω, ID = 15A, VGS = 10V | 25 | ||
| Qg | Total Gate Charge | 150 | nC | VDS = 50V, ID = 30A, VGS = 10V | 120 | ||
| Qgs | Gate Source Charge | ||||||
| Qgd | Gate Drain Charge | ||||||
Ordering and Marking Information
| Device | Package | Marking | Part Number |
| TO-252-2L | Tube | HUAYI 3/4' 8991 | HUAYI 3/4' 8991 |
| TO-252-2L | Reel | HUAYI 3/4' 8991 | HUAYI 3/4' 8991 |
| TO-251-3L | Tube | HUAYI 3/4' 8991 | HUAYI 3/4' 8991 |
| TO-251-3S | Tube | HUAYI 3/4' 8991 | HUAYI 3/4' 8991 |
Classification Profile
| Profile | Feature | SnPb Eutectic Assembly | Pb Free Assembly | ||||
| Preheat Temp Min | Preheat Temp Max | Time (tSmin to tSmax) | Preheat Temp Min | Preheat Temp Max | Time (tSmin to tSmax) | ||
| ℃ | ℃ | seconds | ℃ | ℃ | seconds | ||
| SnPb Eutectic | Assembly | 150 | 180 | 60-120 | |||
| Pb Free | Assembly | 150 | 200 | 60-120 | |||
| Average Ramp Up Rate | 2.5 ℃/second max | 3 ℃/second max | |||||
| Liquidus Temperature (TL) | 217 | seconds | |||||
| Time at Liquidus (tL) | 60 | 60 | |||||
| Peak Package Body Temp (TP) | See Classification Temp in Table | See Classification Temp in Table | See Classification Temp in Table | See Classification Temp in Table | |||
| Time (tP) within ℃ of Specified Classification Temp (TC) | 30 seconds | 30 seconds | |||||
| Average Ramp Down Rate | 6 ℃/second max | 6 ℃/second max | |||||
| Time (tS) from 25℃ to Peak Temp | 6 minutes max | 6 minutes max | |||||
| Tolerance for peak profile Temperature (TP) is defined as a supplier minimum and a user maximum. Tolerance for time at peak profile temperature (tP) is defined as a supplier minimum and a user maximum. | |||||||
Classification Temperatures
| Table 1: SnPb Eutectic Process - Classification Temperatures (TC) | Package | Thickness | Volume mm3 <= 350 | Volume mm3 > 350 | ||
| ℃ | ℃ | ℃ | ℃ | |||
| mm | 235 | 235 | 235 | 235 | ||
| >= 1.6 | 235 | 235 | 235 | 235 | ||
| Table 2: Pb free Process - Classification Temperatures (TC) | Package | Thickness | Volume mm3 <= 350 | Volume mm3 > 350 | ||
| ℃ | ℃ | ℃ | ℃ | |||
| mm | 260 | 260 | 260 | 260 | ||
| 0.8 - 1.6 | 260 | 260 | 260 | 260 | ||
| < 0.8 | 260 | 260 | 260 | 260 | ||
2410010003_HUAYI-HYG045P03LQ1D_C5121319.pdf
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