N Channel Enhancement Mode MOSFET HUAYI HYG024N03LR1P with RoHS Compliance and Low On State Resistance
Key Attributes
Model Number:
HYG024N03LR1P
Product Custom Attributes
Drain To Source Voltage:
30V
Current - Continuous Drain(Id):
160A
Operating Temperature -:
-55℃~+175℃
Gate Threshold Voltage (Vgs(th)):
1V
Reverse Transfer Capacitance (Crss@Vds):
450pF@25V
Number:
1 N-channel
Pd - Power Dissipation:
125W
Input Capacitance(Ciss):
3.992nF
Gate Charge(Qg):
89.8nC@10V
Mfr. Part #:
HYG024N03LR1P
Package:
TO-220FB-3L
Product Description
Product Overview
The HYG024N03LR1 is an N-Channel Enhancement Mode MOSFET designed for switching applications and power management in inverter systems. It offers high performance with low on-state resistance (RDS(ON)) and is 100% avalanche tested for reliability. Lead-free and green devices are available, complying with RoHS standards.
Product Attributes
- Brand: Hymexa
- Product Code: HYG024N03LR1P/B
- Certifications: RoHS Compliant, IPC/JEDEC J-STD-020 (MSL classification)
- Material: Lead-Free and Green Devices Available (matte tin termination finish)
- Origin: Huayi Microelectronics Co., Ltd.
Technical Specifications
| Parameter | Test Conditions | Min | Typ. | Max | Unit |
|---|---|---|---|---|---|
| Absolute Maximum Ratings | |||||
| Drain-Source Voltage (VDSS) | Tc=25C | - | - | 30 | V |
| Gate-Source Voltage (VGSS) | - | - | - | ±20 | V |
| Junction Temperature (TJ) | - | -55 | - | 175 | C |
| Storage Temperature (TSTG) | - | -55 | - | 175 | C |
| Source Current-Continuous (IS) | Tc=25C, Mounted on Large Heat Sink | - | - | 160 | A |
| Pulsed Drain Current (IDM) | Tc=25C | - | - | 640* | A |
| Continuous Drain Current (ID) | Tc=25C | - | - | 160 | A |
| Continuous Drain Current (ID) | Tc=100C | - | - | 113 | A |
| Maximum Power Dissipation (PD) | Tc=25C | - | - | 125 | W |
| Maximum Power Dissipation (PD) | Tc=100C | - | - | 62.5 | W |
| Thermal Resistance (RJC) | Junction-to-Case | - | 1.2 | - | C/W |
| Thermal Resistance (RJA) | Junction-to-Ambient | - | 62.5** | - | C/W |
| Single Pulsed Avalanche Energy (EAS) | L=0.3mH | - | 360*** | - | mJ |
| Electrical Characteristics | |||||
| Drain-Source Breakdown Voltage (BVDSS) | VGS=0V, IDS=250A | 30 | - | - | V |
| Drain-to-Source Leakage Current (IDSS) | VDS=30V, VGS=0V | - | - | 1 | A |
| Drain-to-Source Leakage Current (IDSS) | TJ=125C | - | - | 50 | A |
| Gate Threshold Voltage (VGS(th)) | VDS=VGS, IDS=250A | 1.0 | 1.4 | 3.0 | V |
| Gate-Source Leakage Current (IGSS) | VGS=±20V, VDS=0V | - | - | ±100 | nA |
| Drain-Source On-State Resistance (RDS(ON)) | VGS=10V, IDS=20A | - | 2.1 | 2.6 | m |
| Drain-Source On-State Resistance (RDS(ON)) | VGS=4.5V, IDS=20A | - | 2.7 | 3.3 | m |
| Diode Forward Voltage (VSD) | ISD=20A, VGS=0V | - | 0.76 | 1.2 | V |
| Reverse Recovery Time (trr) | ISD=20A, dISD/dt=100A/s | - | 23 | - | ns |
| Reverse Recovery Charge (Qrr) | - | - | 16 | - | nC |
| Dynamic Characteristics | |||||
| Gate Resistance (RG) | VGS=0V, VDS=0V, F=1MHz | - | 2.8 | - | |
| Input Capacitance (Ciss) | VGS=0V, VDS=25V, Frequency=1.0MHz | - | 3992 | - | pF |
| Output Capacitance (Coss) | - | - | 566 | - | pF |
| Reverse Transfer Capacitance (Crss) | - | - | 450 | - | pF |
| Turn-on Delay Time (td(ON)) | VDD=15V, RG=2.5, IDS=20A, VGS=10V | - | 10.9 | - | ns |
| Turn-on Rise Time (Tr) | - | - | 49.7 | - | ns |
| Turn-off Delay Time (td(OFF)) | - | - | 76.6 | - | ns |
| Turn-off Fall Time (Tf) | - | - | 78.8 | - | ns |
| Gate Charge Characteristics | |||||
| Total Gate Charge (Qg) | VGS=10V, VDS=24V, IDs=20A | - | 89.8 | - | nC |
| Total Gate Charge (Qg) | VGS=4.5V | - | 46.9 | - | nC |
| Gate-Source Charge (Qgs) | - | - | 12.1 | - | nC |
| Gate-Drain Charge (Qgd) | - | - | 22.8 | - | nC |
2410121257_HUAYI-HYG024N03LR1P_C5121322.pdf
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