Load Switching Component HUAYI HYG023N04NR1D N Channel Enhancement Mode MOSFET with Avalanche Tested
Key Attributes
Model Number:
HYG023N04NR1D
Product Custom Attributes
Drain To Source Voltage:
45V
Current - Continuous Drain(Id):
140A
Operating Temperature -:
-55℃~+175℃
RDS(on):
2.9mΩ@10V
Gate Threshold Voltage (Vgs(th)):
4V@250uA
Type:
N-Channel
Reverse Transfer Capacitance (Crss@Vds):
485pF
Number:
1 N-channel
Output Capacitance(Coss):
615pF
Pd - Power Dissipation:
100W
Input Capacitance(Ciss):
3.412nF
Gate Charge(Qg):
82nC@10V
Mfr. Part #:
HYG023N04NR1D
Package:
TO-252-2L
Product Description
Product Overview
The HYG023N04NR1D is a single N-Channel Enhancement Mode MOSFET from Hymexa, designed for high-performance applications. It features a low on-state resistance of 2.3 m (typ.) at VGS = 10V, 45V/140A rating, and is 100% avalanche tested for reliability. This rugged component is suitable for load switching and battery protection circuits. Halogen-free options are available.
Product Attributes
- Brand: Hymexa
- Origin: China (Huayi Microelectronics Co., Ltd.)
- Material: Halogen-Free Devices Available (RoHS compliant, lead-free)
- Certifications: RoHS compliant
Technical Specifications
| Parameter | Symbol | Test Conditions | Min | Typ. | Max | Unit |
| Absolute Maximum Ratings | ||||||
| Drain-Source Voltage | VDSS | Tc=25Unless Otherwise Noted | 45 | V | ||
| Gate-Source Voltage | VGSS | 25 | V | |||
| Junction Temperature Range | TJ | -55 | 175 | |||
| Storage Temperature Range | TSTG | -55 | 175 | |||
| Source Current-Continuous(Body Diode) | IS | Tc=25, Mounted on Large Heat Sink | 140 | A | ||
| Pulsed Drain Current | IDM | Tc=25 | 560 | A | ||
| Continuous Drain Current | ID | Tc=25 | 140 | A | ||
| Continuous Drain Current | ID | Tc=100 | 99 | A | ||
| Maximum Power Dissipation | PD | Tc=25 | 100 | W | ||
| Maximum Power Dissipation | PD | Tc=100 | 50 | W | ||
| Thermal Resistance, Junction-to-Case | RJC | 1.5 | /W | |||
| Thermal Resistance, Junction-to-Ambient | RJA | Surface mounted on FR-4 board | 60 | /W | ||
| Single Pulsed-Avalanche Energy | EAS | L=0.3mH, starting TJ=25, RG=25, VGS=10V | 390 | mJ | ||
| Electrical Characteristics | ||||||
| Drain-Source Breakdown Voltage | BVDSS | VGS=0V, IDS=250A | 45 | - | - | V |
| Drain-to-Source Leakage Current | IDSS | VDS=45V,VGS=0V | - | 1 | A | |
| Drain-to-Source Leakage Current | IDSS | TJ=125 | - | 50 | A | |
| Gate Threshold Voltage | VGS(th) | VDS=VGS, IDS=250A | 2 | 2.8 | 4 | V |
| Gate-Source Leakage Current | IGSS | VGS=25V,VDS=0V | - | 100 | nA | |
| Drain-Source On-State Resistance | RDS(ON) | VGS=10V,IDS=40A | 2.3 | 2.9 | m | |
| Diode Forward Voltage | VSD* | ISD=40A,VGS=0V | 0.8 | 1.0 | V | |
| Reverse Recovery Time | trr | ISD=20A,dISD/dt=100A/s | 22 | - | ns | |
| Reverse Recovery Charge | Qrr | 16 | - | nC | ||
| Gate Resistance | RG | VGS=0V,VDS=0V,F=1MHz | 0.6 | - | ||
| Input Capacitance | Ciss | VGS=0V, VDS=25V, Frequency=1MHz | 3412 | - | pF | |
| Output Capacitance | Coss | 615 | - | pF | ||
| Reverse Transfer Capacitance | Crss | 485 | - | pF | ||
| Turn-on Delay Time | td(ON) | VDD=20V,RG=4, IDS=20A,VGS=10V | 16 | - | ns | |
| Turn-on Rise Time | Tr | 59 | - | ns | ||
| Turn-off Delay Time | td(OFF) | 40 | - | ns | ||
| Turn-off Fall Time | Tf | 62 | - | ns | ||
| Total Gate Charge | Qg | VDS =32V, VGS=10V, ID=20A | 82 | - | nC | |
| Gate-Source Charge | Qgs | 16 | - | nC | ||
| Gate-Drain Charge | Qgd | 31 | - | nC | ||
2410122027_HUAYI-HYG023N04NR1D_C2999757.pdf
Related Products
Small signal Zener diode YANGJIE MMSZ5229BQ epoxy UL94 V0 flammability rating with tin leads
Product OverviewThe MMSZ5221BQ THRU MMSZ5261BQ series are small signal Zener diodes designed for general regulation functions. These diodes feature epoxy that meets UL-94 V-0 flammability rating and is halogen-free, with a Moisture Sensitivity Level 1. They offer Zener voltages ranging from 2.4V to ...
Planar Die Zener Diode Series Including XZT BZT52C18S Suitable for Medium Current Applications
Product OverviewThe BZT52C2V4S thru BZT52C43S series are planar die construction Zener diodes designed for general purpose, medium current applications. They are ideally suited for automated assembly processes and are available in lead-free versions. These diodes offer a wide range of Zener voltages ...
Silicon Carbide Power MOSFET YANGJIE YJD212040NCFG2 Designed for Fast Switching and High Temperature
Product OverviewThe YJD212040NCFG2 is a Silicon Carbide Power MOSFET (N-Channel Enhancement) designed for high-speed switching applications. It offers essentially no switching losses, reduced heat sink requirements, and a maximum working temperature of 175 C. Key features include high blocking ...
Durable YANGJIE MG450HF12TLC2 IGBT module featuring trench technology for motion control welding and UPS
Product OverviewThe MG450HF12TLC2 is a high-performance IGBT module designed for motion/servo control, high-frequency switching applications, UPS, and welding machines. It features low Vce(sat) with Trench technology, low switching losses (particularly Eoff), a positive temperature coefficient for ...
Contact Our Experts And Get A Free Consultation!
Our mission is to offer "High Quality" & "Good Service" & "Fast Delivery" to help our clients to gain more profits.
