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quality Power MOSFET HUAYI HYG020N06LS1B Featuring Low RDS ON and High Continuous Drain Current for Switching Circuits factory
quality Power MOSFET HUAYI HYG020N06LS1B Featuring Low RDS ON and High Continuous Drain Current for Switching Circuits factory

Power MOSFET HUAYI HYG020N06LS1B Featuring Low RDS ON and High Continuous Drain Current for Switching Circuits

Key Attributes
Model Number: HYG020N06LS1B
Product Custom Attributes
Drain To Source Voltage:
60V
Current - Continuous Drain(Id):
250A
Operating Temperature -:
-55℃~+175℃
RDS(on):
2.5mΩ@4.5V,50A
Gate Threshold Voltage (Vgs(th)):
-
Reverse Transfer Capacitance (Crss@Vds):
119pF@25V
Number:
1 N-channel
Input Capacitance(Ciss):
7.25nF
Pd - Power Dissipation:
300W
Gate Charge(Qg):
119nC@10V
Mfr. Part #:
HYG020N06LS1B
Package:
TO-263-2L
Product Description

Product Overview

The HYG020N06LS1P/B is a high-performance N-Channel Enhancement Mode MOSFET from Huayi Microelectronics. It features a low on-resistance (RDS(ON) = 2 m typ. at VGS = 10V), high continuous drain current (250A), and is 100% avalanche tested. Designed for reliability and ruggedness, it is available in Halogen Free and Green (RoHS Compliant) versions. This MOSFET is suitable for demanding applications such as DC-DC switched-mode power supplies, battery management systems, inverters, and electroplate power.

Product Attributes

  • Brand: Huayi Microelectronics
  • Origin: China
  • Certifications: RoHS Compliant, Halogen Free, Green Devices Available

Technical Specifications

ParameterSymbolTest ConditionsUnitMinTyp.Max
Absolute Maximum Ratings
Drain-Source VoltageVDSSV--60
Gate-Source VoltageVGSSV--20
Junction Temperature RangeTJC-55-175
Storage Temperature RangeTSTGC-55-175
Source Current-Continuous (Body Diode)ISTc=25C, Mounted on Large Heat SinkA--250
Pulsed Drain CurrentIDMTc=25CA--820
Continuous Drain CurrentIDTc=25CA--250
Continuous Drain CurrentIDTc=100CA--175
Maximum Power DissipationPDTc=25CW--300
Maximum Power DissipationPDTc=100CW--150
Thermal Resistance, Junction-to-CaseRJCC/W-0.5-
Thermal Resistance, Junction-to-AmbientRJASurface mounted on 1in FR-4 boardC/W-62.5-
Single Pulsed-Avalanche EnergyEASL=0.3mH, Limited by TJmax, starting TJ=25C, RG=25, VGS=10VmJ-1040-
Electrical Characteristics
Drain-Source Breakdown VoltageBVDSSVGS=0V, IDS=250AV60--
Drain-to-Source Leakage CurrentIDSSVDS=60V,VGS=0VA--1
Drain-to-Source Leakage CurrentIDSSTJ=125C, VDS=60V,VGS=0VA--50
Gate Threshold VoltageVGS(th)VDS=VGS, IDS=250AV123
Gate-Source Leakage CurrentIGSSVGS=20V,VDS=0VnA--100
Drain-Source On-State ResistanceRDS(ON)VGS=10V,IDS=50Am-22.4
Drain-Source On-State ResistanceRDS(ON)VGS=4.5V,IDS=50Am-2.53.6
Diode Forward VoltageVSDISD=50A,VGS=0VV-0.841.3
Reverse Recovery TimetrrISD=50A,dISD/dt=100A/sns-52.1-
Reverse Recovery ChargeQrrISD=50A,dISD/dt=100A/snC-67.3-
Gate ResistanceRGVGS=0V,VDS=0V,F=500KHz-0.61-
Input CapacitanceCissVGS=0V, VDS=25V, Frequency=500KHzpF-7250-
Output CapacitanceCossVGS=0V, VDS=25V, Frequency=500KHzpF-2214-
Reverse Transfer CapacitanceCrssVGS=0V, VDS=25V, Frequency=500KHzpF-119-
Turn-on Delay Timetd(ON)VDD=30V,RG=2.5, IDS=50A,VGS=10Vns-19.0-
Turn-on Rise TimeTrVDD=30V,RG=2.5, IDS=50A,VGS=10Vns-69.4-
Turn-off Delay Timetd(OFF)VDD=30V,RG=2.5, IDS=50A,VGS=10Vns-57.2-
Turn-off Fall TimeTfVDD=30V,RG=2.5, IDS=50A,VGS=10Vns-104.4-
Total Gate ChargeQgVDS=48V, IDs=50A, VGS=10VnC-119-
Total Gate ChargeQgVDS=48V, IDs=50A, VGS=4.5VnC-58.3-
Gate-Source ChargeQgsVDS=48V, IDs=50A, VGS=10VnC-29.0-
Gate-Drain ChargeQgdVDS=48V, IDs=50A, VGS=10VnC-20.5-
Gate plateau voltageVplateauVDS=48V, IDs=50A, VGS=10VV-3.7-

2410121326_HUAYI-HYG020N06LS1B_C5121308.pdf

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