Low On State Resistance N Channel MOSFET HUAYI HYG030N03LQ1P Suitable for Switching and Protection
Key Attributes
Model Number:
HYG030N03LQ1P
Product Custom Attributes
Drain To Source Voltage:
30V
Current - Continuous Drain(Id):
100A
RDS(on):
4.5mΩ@4.5V
Operating Temperature -:
-55℃~+175℃
Gate Threshold Voltage (Vgs(th)):
3V@250uA
Type:
N-Channel
Reverse Transfer Capacitance (Crss@Vds):
303pF
Number:
1 N-channel
Input Capacitance(Ciss):
1.986nF
Output Capacitance(Coss):
315pF
Pd - Power Dissipation:
75W
Gate Charge(Qg):
57.9nC@10V
Mfr. Part #:
HYG030N03LQ1P
Package:
TO-220FB-3L
Product Description
Product Overview
The HYG030N03LQ1P/B is an N-Channel Enhancement Mode MOSFET designed for switching applications and battery protection. It offers high performance with low on-state resistance (RDS(ON)) at various gate-source voltages, 100% avalanche tested, and a reliable, rugged design. Lead-free and green device options are available, compliant with RoHS standards.
Product Attributes
- Brand: HYM (Huayi Microelectronics Co., Ltd.)
- Origin: China
- Certifications: RoHS Compliant, Lead-Free, Green Devices Available
Technical Specifications
| Parameter | Test Conditions | Min | Typ. | Max | Unit |
|---|---|---|---|---|---|
| Absolute Maximum Ratings | |||||
| Drain-Source Voltage (VDSS) | 30 | V | |||
| Gate-Source Voltage (VGSS) | ±20 | V | |||
| Junction Temperature (TJ) | -55 | 175 | °C | ||
| Storage Temperature (TSTG) | -55 | 175 | °C | ||
| Source Current-Continuous (IS) | Tc=25°C, Mounted on Large Heat Sink | 100 | A | ||
| Pulsed Drain Current (IDM) | Tc=25°C | 420* | A | ||
| Continuous Drain Current (ID) | Tc=25°C | 100 | A | ||
| Continuous Drain Current (ID) | Tc=100°C | 71 | A | ||
| Maximum Power Dissipation (PD) | Tc=25°C | 75 | W | ||
| Maximum Power Dissipation (PD) | Tc=100°C | 37.5 | W | ||
| Thermal Resistance (RθJC) | Junction-to-Case | 2 | °C/W | ||
| Thermal Resistance (RθJA) | Junction-to-Ambient | 62.5** | °C/W | ||
| Single Pulsed Avalanche Energy (EAS) | L=0.3mH | 154*** | mJ | ||
| Electrical Characteristics | |||||
| Drain-Source Breakdown Voltage (BVDSS) | VGS=0V, IDS=250µA | 30 | - | - | V |
| Drain-to-Source Leakage Current (IDSS) | VDS=30V,VGS=0V | - | - | 1 | µA |
| Drain-to-Source Leakage Current (IDSS) | TJ=125°C | - | - | 50 | µA |
| Gate Threshold Voltage (VGS(th)) | VDS=VGS, IDS=-250µA | 1.0 | 1.3 | 3.0 | V |
| Gate-Source Leakage Current (IGSS) | VGS=±20V,VDS=0V | - | - | ±100 | nA |
| Drain-Source On-State Resistance (RDS(ON)) | VGS=10V,IDS=30A | - | 2.8 | 3.3 | mΩ |
| Drain-Source On-State Resistance (RDS(ON)) | VGS=4.5V,IDS=30A | - | 3.8 | 4.5 | mΩ |
| Diode Forward Voltage (VSD) | ISD=30A,VGS=0V | - | 0.83 | 1.2 | V |
| Reverse Recovery Time (trr) | ISD=30A,dISD/dt=100A/μs | - | 14 | - | ns |
| Reverse Recovery Charge (Qrr) | - | 6 | - | nC | |
| Dynamic Characteristics | |||||
| Gate Resistance (RG) | VGS=0V,VDS=0V,F=1MHz | - | 1.7 | - | Ω |
| Input Capacitance (Ciss) | VGS=0V, VDS=25V, Frequency=1.0MHz | - | 1986 | - | pF |
| Output Capacitance (Coss) | - | 315 | - | pF | |
| Reverse Transfer Capacitance (Crss) | - | 303 | - | pF | |
| Turn-on Delay Time (td(ON)) | VDD=15V,RG=2.5Ω, IDS=30A,VGS=10V | - | 9 | - | ns |
| Turn-on Rise Time (Tr) | - | 77 | - | ns | |
| Turn-off Delay Time (td(OFF)) | - | 47 | - | ns | |
| Turn-off Fall Time (Tf) | - | 101 | - | ns | |
| Gate Charge Characteristics | |||||
| Total Gate Charge (Qg) | VGS=10V, VDS=24V, IDs=30A | - | 57.9 | - | nC |
| Total Gate Charge (Qg) | VGS=4.5V | - | 31.3 | - | nC |
| Gate-Source Charge (Qgs) | - | 6.7 | - | nC | |
| Gate-Drain Charge (Qgd) | - | 19.1 | - | nC | |
2410121251_HUAYI-HYG030N03LQ1P_C2979264.pdf
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