86--136 6733 2386
quality P Channel MOSFET HUAYI HYG190P13NA1P with 72A Drain Current and Lead Free Green Device Availability factory
quality P Channel MOSFET HUAYI HYG190P13NA1P with 72A Drain Current and Lead Free Green Device Availability factory

P Channel MOSFET HUAYI HYG190P13NA1P with 72A Drain Current and Lead Free Green Device Availability

Key Attributes
Model Number: HYG190P13NA1P
Product Custom Attributes
Drain To Source Voltage:
125V
Current - Continuous Drain(Id):
72A
RDS(on):
18mΩ@10V,35A
Operating Temperature -:
-55℃~+175℃
Gate Threshold Voltage (Vgs(th)):
2.5V
Reverse Transfer Capacitance (Crss@Vds):
430pF
Number:
1 P-Channel
Input Capacitance(Ciss):
8.348nF
Pd - Power Dissipation:
230W
Mfr. Part #:
HYG190P13NA1P
Package:
TO-220FB-3L
Product Description

Product Overview

The HYG190P13NA1P/B is a P-Channel Enhancement Mode MOSFET designed for portable equipment and battery-powered systems. It features a high breakdown voltage of -125V and a continuous drain current of -72A, with a low on-resistance of 18 m (typ.) at VGS = -10V. This device is 100% avalanche tested, reliable, and rugged, with lead-free and green device options available (RoHS compliant).

Product Attributes

  • Brand: HYM (Huayi Microelectronics Co., Ltd.)
  • Product Series: HYG190P13NA1P/B
  • Material: Lead Free and Green Devices Available (RoHS Compliant)
  • Certifications: RoHS Compliant, J-STD-020 MSL Classification

Technical Specifications

ParameterSymbolTest ConditionsMinTyp.MaxUnit
Common Ratings
Drain-Source VoltageVDSSTc=25C Unless Otherwise Noted-125--V
Gate-Source VoltageVGSSTc=25C Unless Otherwise Noted--±20V
Maximum Junction TemperatureTJTc=25C Unless Otherwise Noted-55-175°C
Storage Temperature RangeTSTGTc=25C Unless Otherwise Noted-55-175°C
Source Current-Continuous(Body Diode)ISTc=25°C---72A
Pulsed Drain CurrentIDMTc=25°C *---290A
Continuous Drain CurrentIDTc=25°C---72A
Continuous Drain CurrentIDTc=100°C---51A
Maximum Power DissipationPDTc=25°C--230W
Maximum Power DissipationPDTc=100°C--115W
Thermal Resistance, Junction-to-CaseRθJC--0.65-°C/W
Thermal Resistance, Junction-to-AmbientRθJA**-62.5-°C/W
Single Pulsed-Avalanche EnergyEAS*** L=0.3mH-579.5-mJ
Static Characteristics
Drain-Source Breakdown VoltageBVDSSVGS=0V,IDS= -250μA-125--V
Drain-to-Source Leakage CurrentIDSSVDS= -125V,VGS=0V---1μA
Drain-to-Source Leakage CurrentIDSSTJ=125°C---50μA
Gate Threshold VoltageVGS(th)VDS=VGS, IDS= -250μA-1.5-2.5-3.5V
Gate-Source Leakage CurrentIGSSVGS=±20V,VDS=0V--±100nA
Drain-Source On-State ResistanceRDS(ON)VGS= -10V,IDS= -35A-1824mΩ
Diode Characteristics
Diode Forward VoltageVSD*ISD= -35A,VGS=0V--0.83-1.3V
Reverse Recovery TimetrrISD=-35A,dISD/dt=100A/μs-44.6-ns
Reverse Recovery ChargeQrr--86.2-nC
Dynamic Characteristics
Gate ResistanceRGVGS=0V,VDS=0V,F=1MHz-1.8-Ω
Input CapacitanceCissVGS=0V, VDS= -25V, Frequency=1.0MHz-8348-pF
Output CapacitanceCoss--572-pF
Reverse Transfer CapacitanceCrss--430-pF
Turn-on Delay Timetd(ON)VDD= -65V,RG=2.5Ω, IDS= -35A,VGS= -10V-23-ns
Turn-on Rise TimeTr--60.2-ns
Turn-off Delay Timetd(OFF)--76.9-ns
Turn-off Fall TimeTf--102.5-ns
Gate Charge Characteristics
Total Gate ChargeQgVDS = -65V, VGS= -10V, ID= -35A-160-nC
Gate-Source ChargeQgs--23-nC
Gate-Drain ChargeQgd--67-nC

2409302231_HUAYI-HYG190P13NA1P_C5121338.pdf

Related Products
quality power control Sensata B612F-2T-YEC module for AC DC variable voltage output applications up to 15KW factory
power control Sensata B612F-2T-YEC module for AC DC variable voltage output applications up to 15KW
Sensata B-2T, B-2 Series Power Modules The Sensata B-2T and B-2 Series Power Modules offer versatile solutions for AC or DC variable voltage output applications, capable of handling up to 15KW. These modules feature eight circuit options and are UL Recognized (E72445), providing reliable performance ...
quality Compact surface mount bridge rectifier YONGYUTAI DB157S with plated solderable leads and ABS housing factory
Compact surface mount bridge rectifier YONGYUTAI DB157S with plated solderable leads and ABS housing
Product OverviewThis series of bridge rectifiers features glass passivated die construction, offering a low forward voltage drop and high current/surge current capabilities. Designed for surface mount applications, these rectifiers are constructed from UL 94V-0 rated plastic material. They are ...
quality N Channel MOSFET YANGJIE YJA3134KB with Enhanced Load Switching and High Power Dissipation Capabilities factory
N Channel MOSFET YANGJIE YJA3134KB with Enhanced Load Switching and High Power Dissipation Capabilities
Product OverviewThe YJA3134KB is a N-Channel Enhancement Mode Field Effect Transistor utilizing Trench Power LV MOSFET technology. It offers high power and current handling capabilities, ESD protection up to 2.0KV (HBM), and meets UL 94 V-0 flammability rating. This device is designed for PWM ...
quality Power electronics IGBT YANGJIE MG150HF12TLC1 featuring trench technology and ultra fast soft recovery anti parallel FWD factory
Power electronics IGBT YANGJIE MG150HF12TLC1 featuring trench technology and ultra fast soft recovery anti parallel FWD
Product OverviewThe MG150HF12TLC1 S-M409 is a high-performance IGBT module designed for demanding power electronics applications. It features low VCE(sat) with Trench technology, a positive temperature coefficient for VCE(sat), high short circuit capability, and an integrated ultra-fast & soft ...
Contact Our Experts And Get A Free Consultation!

Our mission is to offer "High Quality" & "Good Service" & "Fast Delivery" to help our clients to gain more profits.