N Channel MOSFET HUAYI HYG020N04NR1B 40V 220A Rating Avalanche Tested Lead Free Device for Switching
Key Attributes
Model Number:
HYG020N04NR1B
Product Custom Attributes
Drain To Source Voltage:
40V
Current - Continuous Drain(Id):
220A
RDS(on):
1.9mΩ@10V
Operating Temperature -:
-55℃~+175℃
Gate Threshold Voltage (Vgs(th)):
2.6V@250uA
Type:
N-Channel
Reverse Transfer Capacitance (Crss@Vds):
707pF
Number:
1 N-channel
Input Capacitance(Ciss):
4.392nF
Output Capacitance(Coss):
806pF
Pd - Power Dissipation:
200W
Gate Charge(Qg):
110nC@10V
Mfr. Part #:
HYG020N04NR1B
Package:
TO-263-2L
Product Description
Product Overview
The HYG020N04NR1P/B is an N-Channel Enhancement Mode MOSFET designed for switching applications, particularly in Li-battery protection. It offers high performance with a 40V/220A rating, low on-resistance (RDS(ON) = 1.9 m typ. @VGS = 10V), and is 100% avalanche tested for reliability. Lead-free and green devices are available, compliant with RoHS standards.
Product Attributes
- Brand: Hymexa
- Origin: China (Huayi Microelectronics Co., Ltd.)
- Material: Lead-Free and Green Devices Available (RoHS Compliant)
- Certifications: RoHS Compliant, IPC/JEDEC J-STD-020 compliant for MSL classification.
Technical Specifications
| Model | Feature | Parameter | Test Conditions | Rating | Unit |
| HYG020N04NR1P/B | Absolute Maximum Ratings | VDSS (Drain-Source Voltage) | Tc=25C | 40 | V |
| VGSS (Gate-Source Voltage) | 25 | V | |||
| ID (Continuous Drain Current) | Tc=25C | 220 | A | ||
| PD (Maximum Power Dissipation) | Tc=25C | 200 | W | ||
| Electrical Characteristics | BVDSS (Drain-Source Breakdown Voltage) | VGS=0V, IDS= 250A | 40 | V | |
| VGS(th) (Gate Threshold Voltage) | VDS=VGS, IDS= 250A | 2.6 | V | ||
| RDS(ON) (Drain-Source On-State Resistance) | VGS= 10V, IDS= 40A | 1.9 | m | ||
| VSD (Diode Forward Voltage) | ISD=40A,VGS=0V | 0.8 | V | ||
| Ciss (Input Capacitance) | VGS=0V, VDS= 25V, Frequency=1.0MHz | 4392 | pF |
2409302230_HUAYI-HYG020N04NR1B_C5121310.pdf
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