Single N Channel Enhancement Mode MOSFET HUAYI HYG025N04NA1D for Load Switch and Battery Protection
Key Attributes
Model Number:
HYG025N04NA1D
Product Custom Attributes
Drain To Source Voltage:
40V
Current - Continuous Drain(Id):
125A
Operating Temperature -:
-55℃~+175℃
RDS(on):
3mΩ@10V
Gate Threshold Voltage (Vgs(th)):
4V@250uA
Type:
N-Channel
Reverse Transfer Capacitance (Crss@Vds):
569pF
Number:
1 N-channel
Output Capacitance(Coss):
774pF
Input Capacitance(Ciss):
5.625nF
Pd - Power Dissipation:
86W
Gate Charge(Qg):
122.6nC@10V
Mfr. Part #:
HYG025N04NA1D
Package:
TO-252-2L
Product Description
HYG025N04NA1D Single N-Channel Enhancement Mode MOSFET
The HYG025N04NA1D is a single N-Channel enhancement mode MOSFET designed for various applications. It features a low on-state resistance (RDS(ON) of 2.5m typ. @VGS = 10V), 100% avalanche tested for reliability, and a rugged construction. Halogen-free options are available. This MOSFET is suitable for load switches and lithium battery protection circuits.
Product Attributes
- Brand: HYG (Huayi Microelectronics Co., Ltd.)
- Model: HYG025N04NA1D
- Channel Type: Single N-Channel Enhancement Mode
- Certifications: RoHS compliant, Halogen-Free (Green)
- Package: TO-252-2L
Technical Specifications
| Parameter | Test Conditions | Min | Typ. | Max | Unit |
|---|---|---|---|---|---|
| Absolute Maximum Ratings | |||||
| Drain-Source Voltage (VDSS) | 40 | V | |||
| Gate-Source Voltage (VGSS) | 20 | V | |||
| Junction Temperature Range (TJ) | -55 | 175 | |||
| Storage Temperature Range (TSTG) | -55 | 175 | |||
| Source Current-Continuous (IS) | (Body Diode) Tc=25 | 125 | A | ||
| Pulsed Drain Current (IDM) | Tc=25 | 490 | A | ||
| Continuous Drain Current (ID) | Tc=25 | 125 | A | ||
| Continuous Drain Current (ID) | Tc=100 | 88 | A | ||
| Maximum Power Dissipation (PD) | Tc=25 | 93 | W | ||
| Maximum Power Dissipation (PD) | Tc=100 | 46 | W | ||
| Thermal Resistance, Junction-to-Case (RJC) | 1.60 | /W | |||
| Thermal Resistance, Junction-to-Ambient (RJA) | ** | 60.0 | /W | ||
| Single Pulsed-Avalanche Energy (EAS) | *** L=0.3mH | 664 | mJ | ||
| Electrical Characteristics | |||||
| Drain-Source Breakdown Voltage (BVDSS) | VGS=0V, IDS=250A | 40 | V | ||
| Drain-to-Source Leakage Current (IDSS) | VDS=40V, VGS=0V | 1 | A | ||
| Drain-to-Source Leakage Current (IDSS) | TJ=125 | 50 | A | ||
| Gate Threshold Voltage (VGS(th)) | VDS=VGS, IDS=250A | 2 | 2.7 | 4 | V |
| Gate-Source Leakage Current (IGSS) | VGS=20V, VDS=0V | 100 | nA | ||
| Drain-Source On-State Resistance (RDS(ON)) | VGS=10V, IDS=40A | 2.5 | 3.0 | m | |
| Diode Characteristics | |||||
| Diode Forward Voltage (VSD*) | ISD=40A, VGS=0V | 0.9 | 1.2 | V | |
| Reverse Recovery Time (trr) | ISD=20A, dISD/dt=100A/s | 27 | ns | ||
| Reverse Recovery Charge (Qrr) | 22 | nC | |||
| Dynamic Characteristics | |||||
| Gate Resistance (RG) | VGS=0V, VDS=0V, F=1MHz | 4.7 | |||
| Input Capacitance (Ciss) | VGS=0V, VDS=25V, Frequency=1.0MHz | 5625 | pF | ||
| Output Capacitance (Coss) | 774 | pF | |||
| Reverse Transfer Capacitance (Crss) | 569 | pF | |||
| Turn-on Delay Time (td(ON)) | VDD=20V,RG=4, IDS=20A,VGS=10V | 14.6 | ns | ||
| Turn-on Rise Time (Tr) | 55.6 | ns | |||
| Turn-off Delay Time (td(OFF)) | 121.0 | ns | |||
| Turn-off Fall Time (Tf) | 74.8 | ns | |||
| Gate Charge Characteristics | |||||
| Total Gate Charge (Qg) | VDS =32V, VGS=10V, ID=40A | 122.6 | nC | ||
| Gate-Source Charge (Qgs) | 27.2 | nC | |||
| Gate-Drain Charge (Qgd) | 40.8 | nC | |||
Notes:
* Pulse test, pulse width 300s, duty cycle 2%
** Surface mounted on FR-4 board.
*** Limited by TJmax, starting TJ=25, L = 0.3mH, RG =25, VGS =10V.
2410122027_HUAYI-HYG025N04NA1D_C2874950.pdf
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