Low On State Resistance Single N Channel MOSFET HUAYI HYG017N04LS1C2 for DC DC Converter Applications
Key Attributes
Model Number:
HYG017N04LS1C2
Product Custom Attributes
Drain To Source Voltage:
40V
Current - Continuous Drain(Id):
135A
Operating Temperature -:
-55℃~+175℃
RDS(on):
2.8mΩ@4.5V
Gate Threshold Voltage (Vgs(th)):
3V@250uA
Type:
N-Channel
Reverse Transfer Capacitance (Crss@Vds):
50pF
Number:
1 N-channel
Output Capacitance(Coss):
813pF
Input Capacitance(Ciss):
4.332nF
Pd - Power Dissipation:
75W
Gate Charge(Qg):
66.1nC@10V
Mfr. Part #:
HYG017N04LS1C2
Package:
PDFN5x6-8L
Product Description
Product Overview
The HYG017N04LS1C2 is a single N-Channel Enhancement Mode MOSFET designed for switching applications and power management in DC/DC converters. It offers high performance with a low on-state resistance (RDS(ON)) of 1.7m (typ.) at VGS = 10V and 2.3m (typ.) at VGS = 4.5V. This device is 100% avalanche tested, ensuring reliability and ruggedness. Halogen-free options are available.
Product Attributes
- Brand: HYG
- Model: HYG017N04LS1C2
- Type: Single N-Channel Enhancement Mode MOSFET
- Certifications: RoHS compliant, Halogen-Free (Green)
Technical Specifications
| Parameter | Symbol | Test Conditions | Unit | Min | Typ. | Max |
| Static Characteristics | BVDSS | VGS=0V,IDS=250A | V | 40 | - | - |
| IDSS | VDS=40V,VGS=0V | A | - | - | 1 | |
| TJ=125C | A | - | - | 50 | ||
| Gate Threshold Voltage | VGS(th) | VDS=VGS, IDS=250A | V | 1.0 | 1.8 | 3.0 |
| Gate-Source Leakage Current | IGSS | VGS=20V,VDS=0V | nA | - | - | 100 |
| Drain-Source On-State Resistance | RDS(ON) | VGS=10V,IDS=20A | m | - | 1.7 | 2.1 |
| VGS=4.5V,IDS=20A | m | - | 2.3 | 2.8 | ||
| Diode Characteristics | VSD | ISD=20A,VGS=0V | V | - | 0.77 | 1.2 |
| trr | ISD=20A,dISD/dt=100A/s | ns | - | 33.8 | - | |
| Qrr | - | ISD=20A,dISD/dt=100A/s | nC | - | 32.7 | - |
| Dynamic Characteristics | Ciss | VGS=0V, VDS=25V, Frequency=1.0MHz | pF | - | 4332 | - |
| Coss | VGS=0V, VDS=25V, Frequency=1.0MHz | pF | - | 813 | - | |
| Crss | VGS=0V, VDS=25V, Frequency=1.0MHz | pF | - | 50 | - | |
| Gate Charge Characteristics | Qg | VDS =32V, ID=20A, VGS=10V | nC | - | 66.1 | - |
| Qg | VDS =32V, ID=20A, VGS=4.5V | nC | - | 31.3 | - | |
| Qgs | VDS =32V, ID=20A, VGS=10V | nC | - | 16.3 | - | |
| Qgd | VDS =32V, ID=20A, VGS=10V | nC | - | 10.5 | - |
2410121313_HUAYI-HYG017N04LS1C2_C2837481.pdf
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