HYG035N02KA1C2 MOSFET single N Channel device offering low resistance and high temperature tolerance
Key Attributes
Model Number:
HYG035N02KA1C2
Product Custom Attributes
Drain To Source Voltage:
20V
Current - Continuous Drain(Id):
95A
Operating Temperature -:
-55℃~+175℃
RDS(on):
6.5mΩ@1.8V
Gate Threshold Voltage (Vgs(th)):
1V@250uA
Type:
N-Channel
Reverse Transfer Capacitance (Crss@Vds):
510pF@10V
Number:
1 N-channel
Input Capacitance(Ciss):
4.082nF
Pd - Power Dissipation:
57.6W
Gate Charge(Qg):
47.5nC@2.5V
Mfr. Part #:
HYG035N02KA1C2
Package:
PDFN-8(5x6)
Product Description
Product Overview
The HYG035N02KA1C2 is a single N-Channel enhancement mode MOSFET designed for switching applications and power management in DC/DC converters. It offers low on-state resistance (RDS(ON)) at various gate-source voltages, 100% avalanche tested, and is known for its reliability and ruggedness. Halogen-free options are available.
Product Attributes
- Brand: HYG (Huayi Microelectronics)
- Origin: China
- Material: Halogen-Free Devices Available (RoHS compliant)
- Certifications: RoHS compliant, meets IPC/JEDEC J-STD-020 for MSL classification at lead-free peak reflow temperature.
Technical Specifications
| Model | Parameter | Test Conditions | Min | Typ. | Max | Unit |
| HYG035N02KA1C2 | Absolute Maximum Ratings | |||||
| Drain-Source Voltage (VDSS) | Tc=25C | - | - | 20 | V | |
| Gate-Source Voltage (VGSS) | - | - | ±12 | ±12 | V | |
| Maximum Junction Temperature (TJ) | - | -55 | - | 175 | °C | |
| Storage Temperature Range (TSTG) | - | -55 | - | 175 | °C | |
| Continuous Drain Current (ID) | Tc=25°C | - | - | 95 | A | |
| Continuous Drain Current (ID) | Tc=100°C | - | - | 67 | A | |
| Pulsed Drain Current (IDM) | Tc=25°C | - | - | 380 | A | |
| Maximum Power Dissipation (PD) | Tc=25°C | - | - | 57.6 | W | |
| Maximum Power Dissipation (PD) | Tc=100°C | - | - | 28.8 | W | |
| Thermal Resistance, Junction-to-Case (RθJC) | - | - | 2.6 | - | °C/W | |
| Thermal Resistance, Junction-to-Ambient (RθJA) | Surface mounted on FR-4 board | - | - | 45 | °C/W | |
| HYG035N02KA1C2 | Electrical Characteristics | |||||
| Drain-Source Breakdown Voltage (BVDSS) | VGS=0V,IDS=250μA | 20 | - | - | V | |
| Gate Threshold Voltage (VGS(th)) | VDS=VGS, IDS=250μA | 0.3 | 0.7 | 1.0 | V | |
| Drain-Source On-State Resistance (RDS(ON)) | VGS=4.5V,IDS=15A | - | 2.6 | 3.5 | mΩ | |
| Drain-Source On-State Resistance (RDS(ON)) | VGS=2.5V,IDS=10A | - | 3.1 | 4.5 | mΩ | |
| Drain-Source On-State Resistance (RDS(ON)) | VGS=1.8V,IDS=6A | - | 4.4 | 6.5 | mΩ | |
| Diode Forward Voltage (VSD) | ISD=10A,VGS=0V | - | 0.75 | 1.2 | V | |
| Input Capacitance (Ciss) | VGS=0V, VDS=10V, Frequency=1.0MHz | - | 4082 | - | pF | |
| Output Capacitance (Coss) | VGS=0V, VDS=10V, Frequency=1.0MHz | - | 520 | - | pF | |
| Reverse Transfer Capacitance (Crss) | VGS=0V, VDS=10V, Frequency=1.0MHz | - | 510 | - | pF | |
| HYG035N02KA1C2 | Gate Charge Characteristics | |||||
| Total Gate Charge (Qg) | VGS=4.5V, VDS=10V, ID=5A | - | 47.5 | - | nC | |
| Total Gate Charge (Qg) | VGS=2.5V, VDS=10V, ID=5A | - | 28 | - | nC | |
2410121321_HUAYI-HYG035N02KA1C2_C2827234.pdf
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