AECQ101 Qualified TO247 Package HXY MOSFET SPT40N120T1B1T8TL HXY Ideal for PTC and OBC Applications
Key Attributes
Model Number:
SPT40N120T1B1T8TL-HXY
Product Custom Attributes
Pd - Power Dissipation:
441W
Td(off):
262ns
Td(on):
25ns
Collector-Emitter Breakdown Voltage (Vces):
1.2kV
Reverse Transfer Capacitance (Cres):
93pF
IGBT Type:
FS (Field Stop)
Gate-Emitter Threshold Voltage (Vge(th)@Ic):
4.3V@1mA
Gate Charge(Qg):
346nC@15V
Reverse Recovery Time(trr):
94ns
Switching Energy(Eoff):
2.3mJ
Turn-On Energy (Eon):
1.3mJ
Input Capacitance(Cies):
3.98nF
Pulsed Current- Forward(Ifm):
160A
Output Capacitance(Coes):
157pF
Mfr. Part #:
SPT40N120T1B1T8TL-HXY
Package:
TO-247
Product Description
Product Overview
The SPT40N120T1B1T8TL is an Insulated Gate Bipolar Transistor (IGBT) developed using advanced Trench and Field Stop (T-FS) technology. This technology enhances performance by reducing conduction losses, improving switching characteristics, and increasing avalanche energy. It features a positive temperature coefficient, fast switching speeds, low VCE(sat), and is reliable and rugged. The device is AEC-Q101 qualified, supports a 175 operating temperature, and is available in Halogen Free and Green (RoHS Compliant) versions. It is supplied in a TO-247 package and is suitable for applications such as PTC, motor drives, and OBC.
Product Attributes
- Brand: HUAXUANYANG HXY ELECTRONICS CO.,LTD
- Origin: Shenzhen HuaXuanYang Electronics CO.,LTD
- Package Type: TO-247
- Certifications: AEC-Q101 Qualified, RoHS Compliant
- Device Per Unit: Tube 30
Technical Specifications
| Parameter | Value | Unit | Description |
| VCES | 1200 | V | Collector-Emitter Voltage |
| IC (@TC=25C) | 80 | A | Collector Current |
| IC (@TC=100C) | 40 | A | Collector Current |
| ICM | 160 | A | Pulsed Collector Current, tp limited by TJmax |
| IF (@TC=25C) | 80 | A | Diode Continuous Forward Current |
| IF (@TC=100C) | 40 | A | Diode Continuous Forward Current |
| IFM | 160 | A | Diode Maximum Forward Current, limited by TJmax |
| VGES | 30 | V | Gate-Emitter Voltage |
| tSC | 13 | s | Short circuit withstand time (VGE=15V, VCC400V, allowed number of short circuits<1000, times between short circuits1.0s, TJ175C) |
| PD (@TC=25C) | 441 | W | Power Dissipation |
| TJmax, Tstg | -55 to 175 | Operating Junction and Storage Temperature Range | |
| TL | 260 | Maximum Temperature for Soldering | |
| RJC (IGBT) | 0.34 | /W | Junction-to-Case (IGBT) |
| RJC (Diode) | 0.80 | /W | Junction-to-Case (Diode) |
| RJA | 40 | /W | Junction-to-Ambient |
| VCE(sat).typ (@IC=40A, VGE=15V) | 1.70 | V | Collector-Emitter Saturation Voltage (Typical) |
| VGE(TH) (@IC=1mA) | 4.3 - 5.3 - 6.3 | V | Gate Threshold Voltage |
| VF (@IF=40A) | 1.85 (TJ=25), 1.70 (TJ=125), 1.61 (TJ=175) | V | Diode Forward Voltage |
| ICES (@VCE=1200V, VGE=0V) | -- | 10 A | Collector-Emitter Leakage Current |
| IGES(F) (@VGE=+20V) | -- | 200 nA | Gate-Emitter Forward Leakage Current |
| IGES(R) (@VGE=-20V) | -- | -200 nA | Gate-Emitter Reverse Leakage Current |
| Cies (@VGE=0V, VCE=25V, f=1.0MHz) | -- | 3980 pF | Input Capacitance |
| Coes (@VGE=0V, VCE=25V, f=1.0MHz) | -- | 157 pF | Output Capacitance |
| Cres (@VGE=0V, VCE=25V, f=1.0MHz) | -- | 93 pF | Reverse Transfer Capacitance |
| Qg (@VCC=960V, ICE=40A, VGE=15V) | -- | 346 nC | Gate charge |
| Qge (@VCC=960V, ICE=40A, VGE=15V) | -- | 2.4 nC | Gate-emitter charge |
| Qgc (@VCC=960V, ICE=40A, VGE=15V) | -- | 238 nC | Gate-collector charge |
| td(on) (@IC=40A, VCC=600V, VGE=15V, Rg=5, Inductive Load, TJ=25) | -- | 25 ns | Turn-on Delay Time |
| tr (@IC=40A, VCC=600V, VGE=15V, Rg=5, Inductive Load, TJ=25) | -- | 28 ns | Rise Time |
| td(off) (@IC=40A, VCC=600V, VGE=15V, Rg=5, Inductive Load, TJ=25) | -- | 262 ns | Turn-Off Delay Time |
| tf (@IC=40A, VCC=600V, VGE=15V, Rg=5, Inductive Load, TJ=25) | -- | 149 ns | Fall Time |
| Eon (@IC=40A, VCC=600V, VGE=15V, Rg=5, Inductive Load, TJ=25) | -- | 1.30 mJ | Turn-On Switching Loss |
| Eoff (@IC=40A, VCC=600V, VGE=15V, Rg=5, Inductive Load, TJ=25) | -- | 2.30 mJ | Turn-Off Switching Loss |
| Ets (@IC=40A, VCC=600V, VGE=15V, Rg=5, Inductive Load, TJ=25) | -- | 3.60 mJ | Total Switching Loss |
| td(on) (@IC=40A, VCC=600V, VGE=15V, Rg=5, Inductive Load, TJ=175) | -- | 26 ns | Turn-on Delay Time |
| tr (@IC=40A, VCC=600V, VGE=15V, Rg=5, Inductive Load, TJ=175) | -- | 35 ns | Rise Time |
| td(off) (@IC=40A, VCC=600V, VGE=15V, Rg=5, Inductive Load, TJ=175) | -- | 331 ns | Turn-Off Delay Time |
| tf (@IC=40A, VCC=600V, VGE=15V, Rg=5, Inductive Load, TJ=175) | -- | 224 ns | Fall Time |
| Eon (@IC=40A, VCC=600V, VGE=15V, Rg=5, Inductive Load, TJ=175) | -- | 2.20 mJ | Turn-On Switching Loss |
| Eoff (@IC=40A, VCC=600V, VGE=15V, Rg=5, Inductive Load, TJ=175) | -- | 3.70 mJ | Turn-Off Switching Loss |
| Ets (@IC=40A, VCC=600V, VGE=15V, Rg=5, Inductive Load, TJ=175) | -- | 5.90 mJ | Total Switching Loss |
| Trr (@IF=40A, VCC=600V, di/dt=200A/s, TJ=25) | -- | 94 ns | Reverse Recovery Time |
| Qrr (@IF=40A, VCC=600V, di/dt=200A/s, TJ=25) | -- | 225 nC | Reverse Recovery Charge |
| Irrm (@IF=40A, VCC=600V, di/dt=200A/s, TJ=25) | -- | 9.7 A | Reverse Recovery Current |
| Trr (@IF=40A, VCC=600V, di/dt=200A/s, TJ=175) | -- | 125 ns | Reverse Recovery Time |
| Qrr (@IF=40A, VCC=600V, di/dt=200A/s, TJ=175) | -- | 277 nC | Reverse Recovery Charge |
| Irrm (@IF=40A, VCC=600V, di/dt=200A/s, TJ=175) | -- | 11.2 A | Reverse Recovery Current |
2509181737_HXY-MOSFET-SPT40N120T1B1T8TL-HXY_C49003313.pdf
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