Power MOSFET HUAYI HYG035N10NS2P N Channel Type with High Current Capability and Rugged Construction
Key Attributes
Model Number:
HYG035N10NS2P
Product Custom Attributes
Drain To Source Voltage:
100V
Current - Continuous Drain(Id):
180A
RDS(on):
4mΩ@10V
Operating Temperature -:
-55℃~+175℃
Gate Threshold Voltage (Vgs(th)):
4V@250uA
Type:
N-Channel
Reverse Transfer Capacitance (Crss@Vds):
189pF
Number:
1 N-channel
Output Capacitance(Coss):
2.42nF
Pd - Power Dissipation:
220W
Input Capacitance(Ciss):
7.27nF
Gate Charge(Qg):
115nC@10V
Mfr. Part #:
HYG035N10NS2P
Package:
TO-220FB-3L
Product Description
Product Overview
The HYG035N10NS2P/B is an N-Channel Enhancement Mode MOSFET designed for power switching applications. It offers high performance with a voltage rating of 100V and a continuous drain current of 180A. Key features include a low on-state resistance of 3.2m (typ.) at VGS = 10V, 100% avalanche tested, and a reliable, rugged design. Lead-free and green devices are available, compliant with RoHS standards.
Product Attributes
- Brand: HYM (Huayi Microelectronics Co., Ltd.)
- Origin: China
- Certifications: RoHS Compliant, Lead-Free, Green Devices Available
Technical Specifications
| Parameter | Symbol | Test Conditions | Unit | Min | Typ. | Max |
| Absolute Maximum Ratings | ||||||
| Drain-Source Voltage | VDSS | Tc=25C Unless Otherwise Noted | V | 100 | ||
| Gate-Source Voltage | VGSS | Tc=25C Unless Otherwise Noted | V | 20 | ||
| Junction Temperature Range | TJ | Tc=25C Unless Otherwise Noted | C | -55 | 175 | |
| Storage Temperature Range | TSTG | Tc=25C Unless Otherwise Noted | C | -55 | 175 | |
| Source Current-Continuous (Body Diode) | IS | Tc=25C, Mounted on Large Heat Sink | A | 180 | ||
| Pulsed Drain Current | IDM | Tc=25C, *Repetitive ratingpulse width limited by max. junction temperature. | A | 490 | ||
| Continuous Drain Current | ID | Tc=25C | A | 180 | ||
| Continuous Drain Current | ID | Tc=100C | A | 127 | ||
| Maximum Power Dissipation | PD | Tc=25C | W | 220 | ||
| Maximum Power Dissipation | PD | Tc=100C | W | 110 | ||
| Thermal Resistance, Junction-to-Case | RJC | C/W | 0.68 | |||
| Thermal Resistance, Junction-to-Ambient | RJA | ** Surface mounted on FR-4 board. | C/W | 62.5 | ||
| Single Pulsed-Avalanche Energy | EAS | *** Limited by TJmax , starting TJ=25C, L = 0.3mH, VDS=80V, VGS =10V. L=0.3mH | mJ | 720 | ||
| Electrical Characteristics | ||||||
| Drain-Source Breakdown Voltage | BVDSS | VGS=0V,IDS=250A | V | 100 | - | - |
| Drain-to-Source Leakage Current | IDSS | VDS=100V,VGS=0V | A | 1.0 | ||
| Drain-to-Source Leakage Current | IDSS | TJ=125C | A | 50 | ||
| Gate Threshold Voltage | VGS(th) | VDS=VGS, IDS=250A | V | 2 | 3 | 4 |
| Gate-Source Leakage Current | IGSS | VGS=20V,VDS=0V | nA | 100 | ||
| Drain-Source On-State Resistance | RDS(ON) | VGS=10V,IDS=50A, *Pulse testpulse width 300usduty cycle 2% | m | 3.2 | 4 | |
| Diode Forward Voltage | VSD | ISD=50A,VGS=0V, *Pulse testpulse width 300usduty cycle 2% | V | 0.88 | 1.3 | |
| Reverse Recovery Time | trr | ISD=50A,dISD/dt=100A/s | ns | 78 | - | |
| Reverse Recovery Charge | Qrr | nC | 192 | - | ||
| Gate Resistance | RG | VGS=0V,VDS=0V,F=1MHz | 2.1 | - | ||
| Input Capacitance | Ciss | VGS=0V, VDS=50V, Frequency=500KHz | pF | 7270 | - | |
| Output Capacitance | Coss | VGS=0V, VDS=50V, Frequency=500KHz | pF | 2420 | - | |
| Reverse Transfer Capacitance | Crss | VGS=0V, VDS=50V, Frequency=500KHz | pF | 189 | - | |
| Turn-on Delay Time | td(ON) | VDD=50V,RG=4, IDS=50A,VGS=10V | ns | 28 | - | |
| Turn-on Rise Time | Tr | VDD=50V,RG=4, IDS=50A,VGS=10V | ns | 99 | - | |
| Turn-off Delay Time | td(OFF) | VDD=50V,RG=4, IDS=50A,VGS=10V | ns | 70 | - | |
| Turn-off Fall Time | Tf | VDD=50V,RG=4, IDS=50A,VGS=10V | ns | 85 | - | |
| Total Gate Charge | Qg | VDS=80V, VGS=10V ID=50A | nC | 115 | - | |
| Gate-Source Charge | Qgs | VDS=80V, VGS=10V ID=50A | nC | 41 | - | |
| Gate-Drain Charge | Qgd | VDS=80V, VGS=10V ID=50A | nC | 30 | - | |
2410121248_HUAYI-HYG035N10NS2P_C2986718.pdf
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