insulated gate bipolar transistor HXY MOSFET AOK60B65H2AL with advanced trench and field stop technology
Key Attributes
Model Number:
AOK60B65H2AL
Product Custom Attributes
Mfr. Part #:
AOK60B65H2AL
Package:
TO-247
Product Description
Product Overview
The AOK60B65H2AL is an Insulated Gate Bipolar Transistor (IGBT) manufactured using advanced Trench and Field Stop (T-FS) technology. This technology enhances performance by reducing conduction losses, improving switching characteristics, and increasing avalanche energy. It is designed for applications requiring efficient power conversion and fast switching speeds.
Product Attributes
- Brand: HUAXUANYANG HXY ELECTRONICS CO.,LTD
- Origin: Shenzhen HuaXuanYang Electronics CO.,LTD
- Certifications: Halogen Free and Green Devices Available (RoHS Compliant)
Technical Specifications
| Parameter | Value | Unit | Description |
| Product Name | AOK60B65H2AL | Insulated Gate Bipolar Transistor | |
| Technology | T-FS (Trench and Field Stop) | Advanced technology for reduced conduction loss and improved switching performance. | |
| Package Type | TO-247 | ||
| Tube Quantity | 30 | Units | |
| VCES | 650 | V | Collector-Emitter Voltage |
| IC (TC=25C) | 100 | A | Collector Current |
| IC (TC=100C) | 60 | A | Collector Current |
| ICM | 200 | A | Pulsed Collector Current |
| VCE(sat).typ | 1.65 | V | Collector-Emitter Saturation Voltage (Typical) |
| PD (TC=25C) | 250 | W | Power Dissipation |
| TJmax, Tstg | 55 to 175 | Operating Junction and Storage Temperature Range | |
| RJC (IGBT) | 0.60 | /W | Junction-to-Case Thermal Resistance |
| RJA | 40 | /W | Junction-to-Ambient Thermal Resistance |
| VGE(TH) | 4.3 - 6.3 | V | Gate Threshold Voltage (Min-Max) |
| ICES | -- | A | Collector-Emitter Leakage Current (Max) |
| Cies | 3356 | pF | Input Capacitance (Typical) |
| td(on) (TJ=25C) | 24 | ns | Turn-on Delay Time (Typical) |
| tr (TJ=25C) | 88 | ns | Rise Time (Typical) |
| td(off) (TJ=25C) | 124 | ns | Turn-Off Delay Time (Typical) |
| tf (TJ=25C) | 73 | ns | Fall Time (Typical) |
| Eon (TJ=25C) | 1.40 | mJ | Turn-On Switching Loss (Typical) |
| Eoff (TJ=25C) | 1.20 | mJ | Turn-Off Switching Loss (Typical) |
| Ets (TJ=25C) | 2.60 | mJ | Total Switching Loss (Typical) |
| Trr (TJ=25C) | 136 | ns | Reverse Recovery Time (Typical) |
| Qrr (TJ=25C) | 350 | nC | Reverse Recovery Charge (Typical) |
| Irrm (TJ=25C) | 6.9 | A | Reverse Recovery Current (Typical) |
Applications
- UPS
- Motor drives
- Boost converters
- Portable power stations
Features
- Positive temperature coefficient
- Fast Switching
- Low VCE(sat)
- Reliable and Rugged
2505291610_HXY-MOSFET-AOK60B65H2AL_C49003420.pdf
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