Power Switching MOSFET HUAYI HY3010P N Channel 100 Volt 100 Ampere Avalanche Tested
Key Attributes
Model Number:
HY3010P
Product Custom Attributes
Drain To Source Voltage:
100V
Current - Continuous Drain(Id):
100A
RDS(on):
12mΩ@10V
Gate Threshold Voltage (Vgs(th)):
4V@250uA
Type:
N-Channel
Reverse Transfer Capacitance (Crss@Vds):
260pF
Number:
1 N-channel
Output Capacitance(Coss):
850pF
Input Capacitance(Ciss):
3.1nF
Pd - Power Dissipation:
192W
Gate Charge(Qg):
100nC@10V
Mfr. Part #:
HY3010P
Package:
TO-220FB-3L
Product Description
Product Overview
The HY3010P/B is an N-Channel Enhancement Mode MOSFET designed for power switching applications. It offers high performance with a 100V/100A rating and a low on-state resistance of 10m (typ.) at VGS = 10V. Key features include 100% avalanche tested, reliability, and availability in lead-free and green (RoHS compliant) versions. This MOSFET is suitable for Uninterruptible Power Supply (UPS) systems and other power switching applications.
Product Attributes
- Brand: HY (Huayi Microelectronics)
- Origin: China
- Certifications: RoHS Compliant, Lead-Free, Green Devices Available
Technical Specifications
| Model | Package | VDS (V) | ID (A) | RDS(ON) (m) @ VGS=10V | Avalanche Tested | Notes |
| HY3010P | TO-220FB-3L | 100 | 100 | 10 (typ.) | 100% | Tc=25C, ID=50A |
| HY3010B | TO-263-2L | 100 | 100 | 10 (typ.) | 100% | Tc=25C, ID=50A |
| Parameter | Test Conditions | Min | Typ. | Max | Unit |
| Drain-Source Breakdown Voltage (BVDSS) | VGS=0V,IDS=250A | 100 | - | - | V |
| Gate Threshold Voltage (VGS(th)) | VDS=VGS, IDS=250A | 2 | 3 | 4 | V |
| Gate-Source Leakage Current (IGSS) | VGS=25V,VDS=0V | - | - | 100 | nA |
| Drain-Source On-State Resistance (RDS(ON)) | VGS=10V,IDS=50A | - | 10 | 12 | m |
| Diode Forward Voltage (VSD) | ISD=50A,VGS=0V | - | 0.8 | 1 | V |
| Reverse Recovery Time (trr) | ISD=50A,dISD/dt=100A/s | - | 35 | - | ns |
| Reverse Recovery Charge (Qrr) | ISD=50A | - | 50 | - | nC |
| Input Capacitance (Ciss) | VGS=0V, VDS=25V, F=1.0MHz | - | 3100 | - | pF |
| Output Capacitance (Coss) | VGS=0V, VDS=25V, F=1.0MHz | - | 850 | - | pF |
| Reverse Transfer Capacitance (Crss) | VGS=0V, VDS=25V, F=1.0MHz | - | 260 | - | pF |
| Turn-on Delay Time (td(ON)) | VDD=50V,RG=6, IDS=50A,VGS=10V | - | 18 | 38 | ns |
| Turn-on Rise Time (Tr) | VDD=50V,RG=6, IDS=50A,VGS=10V | - | 50 | 102 | ns |
| Turn-off Delay Time (td(OFF)) | VDD=50V,RG=6, IDS=50A,VGS=10V | - | 58 | 116 | ns |
| Turn-off Fall Time (Tf) | VDD=50V,RG=6, IDS=50A,VGS=10V | - | 68 | 135 | ns |
| Total Gate Charge (Qg) | VDS=80V, VGS=10V, ID=50A | - | 76 | 100 | nC |
| Gate-Source Charge (Qgs) | VDS=80V, VGS=10V, ID=50A | - | 12 | - | nC |
| Gate-Drain Charge (Qgd) | VDS=80V, VGS=10V, ID=50A | - | 26 | - | nC |
2410122028_HUAYI-HY3010P_C330372.pdf
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