Low On Resistance 1.8mOhm MOSFET N Channel 100V 280A HUAYI HYG018N10NS1P Halogen Free Device
Key Attributes
Model Number:
HYG018N10NS1P
Product Custom Attributes
Drain To Source Voltage:
100V
Current - Continuous Drain(Id):
280A
Operating Temperature -:
-55℃~+175℃
RDS(on):
2.1mΩ@10V
Gate Threshold Voltage (Vgs(th)):
4V@250uA
Type:
N-Channel
Reverse Transfer Capacitance (Crss@Vds):
196pF
Number:
1 N-channel
Output Capacitance(Coss):
5.47nF
Input Capacitance(Ciss):
12.6nF
Pd - Power Dissipation:
300W
Gate Charge(Qg):
198nC@10V
Mfr. Part #:
HYG018N10NS1P
Package:
TO-220FB-3L
Product Description
Product Overview
The HYG018N10NS1/B is a N-Channel Enhancement Mode MOSFET designed for high-power applications. It features a low on-resistance of 1.8m(typ.)@VGS=10V, 100V/280A rating, and is 100% avalanche tested for reliability. Available in Halogen-Free and Green (RoHS Compliant) versions, this MOSFET is suitable for energy storage, battery protection, and motor control applications.
Product Attributes
- Brand: Hymexa
- Origin: China
- Certifications: RoHS Compliant, Halogen-Free
Technical Specifications
| Model | Feature | RDS(ON) | VDSS | ID | Package |
| HYG018N10NS1P/B | N-Channel Enhancement Mode MOSFET, 100V/280A, 1.8m(typ.)@VGS=10V, 100% Avalanche Tested, Reliable and Rugged, Halogen-Free and Green Devices Available | 1.8m(typ.)@VGS=10V | 100V | 280A | TO-220FB-3L, TO-263-2L |
2410121248_HUAYI-HYG018N10NS1P_C2857453.pdf
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