N Channel Enhancement Mode MOSFET HUAYI HYG030N03LQ1B Featuring Low On Resistance and 30 Volt Rating
Key Attributes
Model Number:
HYG030N03LQ1B
Product Custom Attributes
Drain To Source Voltage:
30V
Current - Continuous Drain(Id):
100A
RDS(on):
2.8mΩ@10V;3.8mΩ@4.5V
Gate Threshold Voltage (Vgs(th)):
1.3V@250uA
Type:
N-Channel
Reverse Transfer Capacitance (Crss@Vds):
303pF
Number:
1 N-channel
Pd - Power Dissipation:
75W
Input Capacitance(Ciss):
1.986nF
Output Capacitance(Coss):
315pF
Gate Charge(Qg):
57.9nC@10V;31.3nC@4.5V
Mfr. Part #:
HYG030N03LQ1B
Package:
TO-263-2L
Product Description
HYG030N03LQ1P/B N-Channel Enhancement Mode MOSFET
The HYG030N03LQ1P/B is a high-performance N-Channel Enhancement Mode MOSFET designed for switching applications. It offers a 30V/100A rating with low on-resistance (RDS(ON) = 2.8m typ. @ VGS = 10V, 3.8m typ. @ VGS = 4.5V). This device is 100% avalanche tested, ensuring reliability and ruggedness. Lead-free and green device options are available, compliant with RoHS standards.
Product Attributes
- Brand: HYM
- Origin: China
- Certifications: RoHS Compliant, Lead-Free, Green Devices Available
Technical Specifications
| Parameter | Test Conditions | Min | Typ. | Max | Unit |
| Absolute Maximum Ratings | |||||
| Drain-Source Voltage (VDSS) | 30 | V | |||
| Gate-Source Voltage (VGSS) | 20 | V | |||
| Junction Temperature Range (TJ) | -55 | 175 | C | ||
| Storage Temperature Range (TSTG) | -55 | 175 | C | ||
| Source Current-Continuous (IS) | Tc=25C, Mounted on Large Heat Sink | 100 | A | ||
| Pulsed Drain Current (IDM) | Tc=25C | 420* | A | ||
| Continuous Drain Current (ID) | Tc=25C | 100 | A | ||
| Continuous Drain Current (ID) | Tc=100C | 71 | A | ||
| Maximum Power Dissipation (PD) | Tc=25C | 75 | W | ||
| Maximum Power Dissipation (PD) | Tc=100C | 37.5 | W | ||
| Thermal Resistance, Junction-to-Case (RJC) | 2 | C/W | |||
| Thermal Resistance, Junction-to-Ambient (RJA) | Surface mounted on 1in FR-4 board | 62.5** | C/W | ||
| Single Pulsed-Avalanche Energy (EAS) | L=0.3mH, Limited by TJmax, starting TJ=25C, RG=25, VGS=10V | 154*** | mJ | ||
| Static Characteristics | |||||
| Drain-Source Breakdown Voltage (BVDSS) | VGS=0V, IDS=250A | 30 | V | ||
| Drain-to-Source Leakage Current (IDSS) | VDS=30V,VGS=0V | 1 | A | ||
| Drain-to-Source Leakage Current (IDSS) | TJ=125C | 50 | A | ||
| Gate Threshold Voltage (VGS(th)) | VDS=VGS, IDS=-250A | 1.0 | 1.3 | 3.0 | V |
| Gate-Source Leakage Current (IGSS) | VGS=20V,VDS=0V | 100 | nA | ||
| Drain-Source On-State Resistance (RDS(ON)) | VGS=10V,IDS=30A | 2.8 | 3.3 | m | |
| Drain-Source On-State Resistance (RDS(ON)) | VGS=4.5V,IDS=30A | 3.8 | 4.5 | m | |
| Diode Characteristics | |||||
| Diode Forward Voltage (VSD) | ISD=30A,VGS=0V | 0.83 | 1.2 | V | |
| Reverse Recovery Time (trr) | ISD=30A,dISD/dt=100A/s | 14 | ns | ||
| Reverse Recovery Charge (Qrr) | 6 | nC | |||
| Dynamic Characteristics | |||||
| Gate Resistance (RG) | VGS=0V,VDS=0V,F=1MHz | 1.7 | |||
| Input Capacitance (Ciss) | VGS=0V, VDS=25V, Frequency=1.0MHz | 1986 | pF | ||
| Output Capacitance (Coss) | 315 | pF | |||
| Reverse Transfer Capacitance (Crss) | 303 | pF | |||
| Turn-on Delay Time (td(ON)) | VDD=15V,RG=2.5, IDS=30A,VGS=10V | 9 | ns | ||
| Turn-on Rise Time (Tr) | 77 | ns | |||
| Turn-off Delay Time (td(OFF)) | 47 | ns | |||
| Turn-off Fall Time (Tf) | 101 | ns | |||
| Gate Charge Characteristics | |||||
| Total Gate Charge (Qg) | VGS=10V, VDS=24V, IDs=30A | 57.9 | nC | ||
| Total Gate Charge (Qg) | VGS=4.5V | 31.3 | nC | ||
| Gate-Source Charge (Qgs) | 6.7 | nC | |||
| Gate-Drain Charge (Qgd) | 19.1 | nC | |||
2410121251_HUAYI-HYG030N03LQ1B_C5121309.pdf
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