Power Switching N Channel Enhancement Mode MOSFET HUAYI HY1720P with 200V Drain Source Voltage
Key Attributes
Model Number:
HY1720P
Product Custom Attributes
Drain To Source Voltage:
200V
Current - Continuous Drain(Id):
64A
Operating Temperature -:
-55℃~+175℃
RDS(on):
32mΩ@10V
Gate Threshold Voltage (Vgs(th)):
5V@250uA
Type:
N-Channel
Reverse Transfer Capacitance (Crss@Vds):
136pF
Number:
1 N-channel
Output Capacitance(Coss):
338pF
Input Capacitance(Ciss):
5.057nF
Pd - Power Dissipation:
263W
Gate Charge(Qg):
101nC@10V
Mfr. Part #:
HY1720P
Package:
TO-220FB
Product Description
Product Overview
The HY1720P/B is an N-Channel Enhancement Mode MOSFET designed for power switching applications. It features a high voltage rating of 200V and a continuous drain current of 64A, with a low on-resistance of 27m (typ.) at VGS = 10V. This device is 100% avalanche tested, reliable, and rugged, with lead-free and green (RoHS Compliant) options available. It is suitable for use in Uninterruptible Power Supplies and other power switching circuits.
Product Attributes
- Brand: HY1720P/B
- Origin: Xi'an Huayi Microelectronics Co., Ltd.
- Certifications: RoHS Compliant, Lead-Free, Green Devices Available
Technical Specifications
| Parameter | Test Conditions | HY1720 Unit | Min | Typ. | Max | |
| Absolute Maximum Ratings | ||||||
| Drain-Source Voltage (VDSS) | Tc=25C Unless Otherwise Noted | V | - | - | 200 | |
| Gate-Source Voltage (VGSS) | V | - | ±20 | - | ||
| Maximum Junction Temperature (TJ) | C | - | - | 175 | ||
| Storage Temperature Range (TSTG) | C | -55 | - | 175 | ||
| Source Current-Continuous (IS) (Body Diode) | Tc=25C Mounted on Large Heat Sink | A | - | - | 64 | |
| Pulsed Drain Current (IDM) | Tc=25C | A | - | - | 250 | |
| Continuous Drain Current (ID) | Tc=25C | A | - | - | 64 | |
| Continuous Drain Current (ID) | Tc=100C | A | - | - | 46 | |
| Maximum Power Dissipation (PD) | Tc=25C | W | - | - | 263 | |
| Maximum Power Dissipation (PD) | Tc=100C | W | - | - | 131 | |
| Thermal Resistance, Junction-to-Case (RJC) | C/W | - | 0.57 | - | ||
| Thermal Resistance, Junction-to-Ambient (RJA) | Surface mounted on FR-4 board. | C/W | - | 62 | - | |
| Single Pulsed-Avalanche Energy (EAS) | L=0.3mH | mJ | - | 575 | - | |
| Static Characteristics | ||||||
| Drain-Source Breakdown Voltage (BVDSS) | VGS=0V,IDS=250A | V | 200 | - | - | |
| Drain-to-Source Leakage Current (IDSS) | VDS=200V,VGS=0V | μA | - | - | 1.0 | |
| Drain-to-Source Leakage Current (IDSS) | TJ=125C | μA | - | - | 50 | |
| Gate Threshold Voltage (VGS(th)) | VDS=VGS, IDS=250A | V | 3.0 | 3.8 | 5.0 | |
| Gate-Source Leakage Current (IGSS) | VGS=±20V,VDS=0V | nA | - | - | ±100 | |
| Drain-Source On-State Resistance (RDS(ON)) | VGS=10V,IDS=30A | mΩ | - | 27 | 32 | |
| Diode Characteristics | ||||||
| Diode Forward Voltage (VSD) | ISD=30A,VGS=0V | V | - | 0.85 | 1.3 | |
| Reverse Recovery Time (trr) | ISD=30A,dISD/dt=100A/μs | ns | - | 48 | - | |
| Reverse Recovery Charge (Qrr) | nC | - | 78 | - | ||
| Dynamic Characteristics | ||||||
| Gate Resistance (RG) | VGS=0V,VDS=0V,F=1 MHz | Ω | - | 3 | - | |
| Input Capacitance (Ciss) | VGS=0V, VDS=25V, Frequency=1.0MHz | pF | - | 5057 | - | |
| Output Capacitance (Coss) | pF | - | 338 | - | ||
| Reverse Transfer Capacitance (Crss) | pF | - | 136 | - | ||
| Turn-on Delay Time (td(ON)) | VDD=100V,RG=2.5Ω, IDS=30A,VGS=10V | ns | - | 30 | - | |
| Turn-on Rise Time (Tr) | ns | - | 20 | - | ||
| Turn-off Delay Time (td(OFF)) | ns | - | 21 | - | ||
| Turn-off Fall Time (Tf) | ns | - | 31 | - | ||
| Gate Charge Characteristics | ||||||
| Total Gate Charge (Qg) | VDS100V, VGS=10V ID=30A | nC | - | 101 | - | |
| Gate-Source Charge (Qgs) | nC | - | 31 | - | ||
| Gate-Drain Charge (Qgd) | nC | - | 39 | - | ||
2409302230_HUAYI-HY1720P_C358113.pdf
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