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quality Power Switching MOSFET HUAYI HY1720W N Channel Enhancement Mode with Low RDS ON and High Reliability factory
quality Power Switching MOSFET HUAYI HY1720W N Channel Enhancement Mode with Low RDS ON and High Reliability factory

Power Switching MOSFET HUAYI HY1720W N Channel Enhancement Mode with Low RDS ON and High Reliability

Key Attributes
Model Number: HY1720W
Product Custom Attributes
Drain To Source Voltage:
200V
Current - Continuous Drain(Id):
64A
RDS(on):
32mΩ@10V
Operating Temperature -:
-55℃~+175℃
Gate Threshold Voltage (Vgs(th)):
5V@250uA
Type:
N-Channel
Reverse Transfer Capacitance (Crss@Vds):
120pF
Number:
1 N-channel
Output Capacitance(Coss):
206pF
Input Capacitance(Ciss):
4.816nF
Pd - Power Dissipation:
263W
Gate Charge(Qg):
102nC
Mfr. Part #:
HY1720W
Package:
TO-247A-3L
Product Description

HY1720W N-Channel Enhancement Mode MOSFET

The HY1720W is a high-performance N-Channel Enhancement Mode MOSFET designed for power switching applications. It offers a robust and reliable solution with key advantages such as a low on-resistance (RDS(ON) of 27 m typ. at VGS = 10V), 100% avalanche tested, and a rugged construction. Available in Halogen Free and Green (RoHS Compliant) versions, this MOSFET is suitable for Uninterruptible Power Supply systems and other demanding power applications.

Product Attributes

  • Brand: HYMEXA
  • Origin: China
  • Material: Halogen Free and Green Devices Available (RoHS Compliant)
  • Certifications: RoHS Compliant

Technical Specifications

SymbolParameterTest ConditionsMinTyp.MaxUnit
Absolute Maximum Ratings
VDSSDrain-Source Voltage200V
VGSSGate-Source Voltage±20±20V
TJMaximum Junction Temperature175°C
TSTGStorage Temperature Range-55175°C
ISSource Current-Continuous(Body Diode)Tc=25°C64A
IDMPulsed Drain CurrentTc=25°C, *250A
IDContinuous Drain CurrentTc=25°C64A
IDContinuous Drain CurrentTc=100°C46A
PDMaximum Power DissipationTc=25°C263W
PDMaximum Power DissipationTc=100°C131W
RθJCThermal Resistance, Junction-to-Case0.57°C/W
RθJAThermal Resistance, Junction-to-Ambient**62°C/W
EASSingle Pulsed-Avalanche EnergyL=0.3mH ***575mJ
Electrical Characteristics
BVDSSDrain-Source Breakdown VoltageVGS=0V, IDS=250μA200--V
IDSSDrain-to-Source Leakage CurrentVDS=200V, VGS=0V-1.0μA
IDSSDrain-to-Source Leakage CurrentTJ=125°C-50μA
VGS(th)Gate Threshold VoltageVDS=VGS, IDS=250μA3.03.85.0V
IGSSGate-Source Leakage CurrentVGS=±20V, VDS=0V-±100nA
RDS(ON)*Drain-Source On-State ResistanceVGS=10V, IDS=30A2732mΩ
Diode Characteristics
VSD*Diode Forward VoltageISD=30A, VGS=0V0.851.3V
trrReverse Recovery TimeISD=30A, dISD/dt=100A/μs111.6-ns
QrrReverse Recovery Charge-581.9-nC
Dynamic Characteristics
RGGate ResistanceVGS=0V, VDS=0V, F=1 MHz3.4-Ω
CissInput CapacitanceVGS=0V, VDS=100V, Frequency=1.0MHz4816-pF
CossOutput Capacitance-206-
CrssReverse Transfer Capacitance-120-
td(ON)Turn-on Delay TimeVDD=100V, RG=4Ω, IDS=30A, VGS=10V27.6-ns
trTurn-on Rise Time98.1-
td(OFF)Turn-off Delay Time-78.4-
tfTurn-off Fall Time-89.4-
Gate Charge Characteristics
QgTotal Gate ChargeVDS=100V, VGS=10V, ID=30A102-nC
QgsGate-Source Charge-29-
QgdGate-Drain Charge-35-

2409302230_HUAYI-HY1720W_C3025195.pdf

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