N Channel Enhancement Mode MOSFET HUAYI HYG023N04NR1B with Halogen Free and RoHS Compliant Features
Key Attributes
Model Number:
HYG023N04NR1B
Product Custom Attributes
Drain To Source Voltage:
45V
Current - Continuous Drain(Id):
200A
Operating Temperature -:
-55℃~+175℃
RDS(on):
2.2mΩ@10V,40A
Gate Threshold Voltage (Vgs(th)):
2.8V
Reverse Transfer Capacitance (Crss@Vds):
532pF
Number:
1 N-channel
Input Capacitance(Ciss):
3.474nF
Pd - Power Dissipation:
200W
Gate Charge(Qg):
83nC@10V
Mfr. Part #:
HYG023N04NR1B
Package:
TO-263-2L
Product Description
Product Overview
The HYG023N04NR1P/B is a high-performance N-Channel Enhancement Mode MOSFET designed for switching applications, particularly in Li-battery protection. It features a low on-state resistance (RDS(ON) of 2.2 m typ. @VGS = 10V), 45V/200A rating, 100% avalanche and DVDS tested, and a reliable, rugged design. Halogen-free and green options are available, compliant with RoHS standards.
Product Attributes
- Brand: HYG (Huayi Microelectronics)
- Origin: China
- Certifications: RoHS Compliant, Halogen Free, Green Devices Available
Technical Specifications
| Model | Package | VDSS (V) | ID (A) @Tc=25C | RDS(ON) (m) @VGS=10V | Application |
| HYG023N04NR1P/B | TO-220FB-3L | 45 | 200 | 2.2 (typ.) | Switching, Li-battery protection |
| HYG023N04NR1P/B | TO-263-2L | 45 | 200 | 2.2 (typ.) | Switching, Li-battery protection |
2410121317_HUAYI-HYG023N04NR1B_C5121311.pdf
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