Power Switching N Channel Enhancement Mode MOSFET HYG200N12NS1P with Low RDS ON and High Reliability
Key Attributes
Model Number:
HYG200N12NS1P
Product Custom Attributes
Drain To Source Voltage:
120V
Current - Continuous Drain(Id):
60A
Operating Temperature -:
-55℃~+175℃
RDS(on):
20mΩ@10V
Gate Threshold Voltage (Vgs(th)):
4V@250uA
Type:
N-Channel
Reverse Transfer Capacitance (Crss@Vds):
18pF
Number:
1 N-channel
Output Capacitance(Coss):
327pF
Pd - Power Dissipation:
125W
Input Capacitance(Ciss):
2.35nF
Gate Charge(Qg):
33.1nC@10V
Mfr. Part #:
HYG200N12NS1P
Package:
TO-220FB-3
Product Description
Product Overview
The HYG200N12NS1P is an N-Channel Enhancement Mode MOSFET designed for power switching applications and high-frequency synchronous buck converters. It features a low RDS(ON) of 15m (typ.) at VGS = 10V, 100% avalanche tested, and a reliable, rugged construction. Lead-free and green devices are available, compliant with RoHS standards.
Product Attributes
- Brand: HYG (Huayi Microelectronics Co., Ltd.)
- Origin: China
- Material: Lead-Free and Green Devices Available (RoHS Compliant)
- Certifications: RoHS Compliant, IPC/JEDEC J-STD-020 (MSL Classification), Halogen Free (Br or Cl does not exceed 900ppm by weight in homogeneous material and total of Br and Cl does not exceed 1500ppm by weight)
Technical Specifications
| Model | Feature | Parameter | Rating | Unit |
| HYG200N12NS1P | N-Channel Enhancement Mode MOSFET | Drain-Source Voltage (VDSS) | 120 | V |
| Gate-Source Voltage (VGSS) | 20 | V | ||
| Maximum Junction Temperature (TJ) | 175 | C | ||
| Storage Temperature Range (TSTG) | -55 to 175 | C | ||
| Continuous Drain Current (ID) @ Tc=25C | 60 | A | ||
| Continuous Drain Current (ID) @ Tc=100C | 42 | A | ||
| Pulsed Drain Current (IDM) @ Tc=25C | 210 | A | ||
| Maximum Power Dissipation (PD) @ Tc=25C | 125 | W | ||
| Maximum Power Dissipation (PD) @ Tc=100C | 62.5 | W | ||
| Thermal Resistance, Junction-to-Case (RJC) | 1.2 | C/W | ||
| Thermal Resistance, Junction-to-Ambient (RJA) | 62 | C/W | ||
| Single Pulsed-Avalanche Energy (EAS) @ L=0.3mH | 141.3 | mJ | ||
| Drain-Source On-State Resistance (RDS(ON)) @ VGS=10V, IDS=30A | 15 (typ.), 20 (max.) | m | ||
| Gate Threshold Voltage (VGS(th)) @ IDS=250A | 2 to 4 | V | ||
| Diode Forward Voltage (VSD) @ ISD=30A | 0.88 (typ.), 1.3 (max.) | V | ||
| Input Capacitance (Ciss) @ VGS=0V, VDS=25V, F=1.0MHz | 2350 | pF | ||
| Output Capacitance (Coss) | 327 | pF | ||
| Reverse Transfer Capacitance (Crss) | 18 | pF | ||
| Total Gate Charge (Qg) @ VDS=96V, VGS=10V, ID=30A | 33.1 | nC |
2409302230_HUAYI-HYG200N12NS1P_C2981473.pdf
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