Single N Channel Enhancement Mode MOSFET HUAYI HYG027N04LR1D Suitable for Lithium Battery Protection Boards
Key Attributes
Model Number:
HYG027N04LR1D
Product Custom Attributes
Drain To Source Voltage:
40V
Current - Continuous Drain(Id):
95A
RDS(on):
3.1mΩ@4.5V,20A
Operating Temperature -:
-55℃~+175℃
Gate Threshold Voltage (Vgs(th)):
1.7V
Reverse Transfer Capacitance (Crss@Vds):
378pF
Number:
1 N-channel
Input Capacitance(Ciss):
4.172nF
Pd - Power Dissipation:
62.5W
Gate Charge(Qg):
97.4nC@10V
Mfr. Part #:
HYG027N04LR1D
Package:
TO-252-2L
Product Description
Product Overview
The HYG027N04LR1D is a single N-Channel Enhancement Mode MOSFET designed for various applications including load switches and lithium battery protection boards. It offers high performance with a low on-state resistance (RDS(ON)) of 2.6 m typ. at VGS = 10V and 3.1 m typ. at VGS = 4.5V. This device is 100% avalanche tested, reliable, and rugged. Halogen-free devices compliant with RoHS are available.
Product Attributes
- Brand: HYG (Huayi Microelectronics Co., Ltd.)
- Origin: China
- Material: Halogen-Free (RoHS Compliant)
- Certifications: RoHS Compliant
Technical Specifications
| Parameter | Test Conditions | Unit | Min | Typ. | Max |
|---|---|---|---|---|---|
| Absolute Maximum Ratings | |||||
| VDSS | Drain-Source Voltage | V | - | - | 40 |
| VGSS | Gate-Source Voltage | V | - | ±20 | - |
| TJ | Junction Temperature Range | -55 | - | 175 | |
| TSTG | Storage Temperature Range | -55 | - | 175 | |
| ID | Continuous Drain Current (Tc=25) | A | - | 95 | - |
| ID | Continuous Drain Current (Tc=100) | A | - | 67 | - |
| IDM | Pulsed Drain Current (Tc=25) | A | - | 380 | - |
| PD | Maximum Power Dissipation (Tc=25) | W | - | 62.5 | - |
| PD | Maximum Power Dissipation (Tc=100) | W | - | 31.3 | - |
| RJC | Thermal Resistance, Junction-to-Case | /W | - | 2.4 | - |
| RJA | Thermal Resistance, Junction-to-Ambient | /W | - | 110 | - |
| EAS | Single Pulsed-Avalanche Energy (L=0.3mH) | mJ | - | 388 | - |
| Electrical Characteristics | |||||
| BVDSS | Drain-Source Breakdown Voltage (VGS=0V,IDS=250A) | V | 40 | - | - |
| IDSS | Drain-to-Source Leakage Current (VDS=40V,VGS=0V) | μA | - | - | 1 |
| IDSS | Drain-to-Source Leakage Current (TJ=125) | μA | - | - | 50 |
| VGS(th) | Gate Threshold Voltage (VDS=VGS, IDS=250A) | V | 1 | 1.7 | 3 |
| IGSS | Gate-Source Leakage Current (VGS=±20V,VDS=0V) | nA | - | - | ±100 |
| RDS(ON) | Drain-Source On-State Resistance (VGS=10V,IDS=20A) | mΩ | - | 2.6 | 3.5 |
| RDS(ON) | Drain-Source On-State Resistance (VGS=4.5V,IDS=20A) | mΩ | - | 3.1 | 4.3 |
| VSD* | Diode Forward Voltage (ISD=20A,VGS=0V) | V | - | 0.8 | 1.2 |
| trr | Reverse Recovery Time (ISD=40A,dISD/dt=100A/s) | ns | - | 18.7 | - |
| Qrr | Reverse Recovery Charge | nC | - | 10.6 | - |
| Dynamic Characteristics | |||||
| RG | Gate Resistance (VGS=0V,VDS=0V,F=1M Hz) | Ω | - | 0.6 | - |
| Ciss | Input Capacitance (VGS=0V, VDS=25V, Frequency=1.0MHz) | pF | - | 4172 | - |
| Coss | Output Capacitance | pF | - | 437 | - |
| Crss | Reverse Transfer Capacitance | pF | - | 378 | - |
| td(ON) | Turn-on Delay Time (VDD=20V,RG=2.5Ω, IDS=40A,VGS=10V) | ns | - | 13.9 | - |
| Tr | Turn-on Rise Time | ns | - | 76.6 | - |
| td(OFF) | Turn-off Delay Time | ns | - | 54 | - |
| Tf | Turn-off Fall Time | ns | - | 105.3 | - |
| Gate Charge Characteristics | |||||
| Qg | Total Gate Charge (VGS=10V) (VDS =32V, VGS=10V, ID=40A) | nC | - | 97.4 | - |
| Qg | Total Gate Charge (VGS=4.5V) | nC | - | 50.2 | - |
| Qgs | Gate-Source Charge | nC | - | 14 | - |
| Qgd | Gate-Drain Charge | nC | - | 26.4 | - |
2410121314_HUAYI-HYG027N04LR1D_C5155308.pdf
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