Durable Single N Channel MOSFET HYG170N03LR1C2 with Low On Resistance and Halogen Free Certification
Key Attributes
Model Number:
HYG170N03LR1C2
Product Custom Attributes
Drain To Source Voltage:
30V
Current - Continuous Drain(Id):
24A
Operating Temperature -:
-55℃~+175℃
RDS(on):
21.5mΩ@4.5V,4A
Gate Threshold Voltage (Vgs(th)):
1.9V
Reverse Transfer Capacitance (Crss@Vds):
38pF
Number:
1 N-channel
Pd - Power Dissipation:
20W
Input Capacitance(Ciss):
412pF
Gate Charge(Qg):
9.5nC@10V
Mfr. Part #:
HYG170N03LR1C2
Package:
PDFN-8L(5x6)
Product Description
HYG170N03LR1C2 Single N-Channel Enhancement Mode MOSFET
The HYG170N03LR1C2 is a single N-Channel enhancement mode MOSFET designed for various applications. It features low on-resistance (RDS(ON)= 14.5 m typ. @VGS = 10V), 100% avalanche tested, and a reliable, rugged design. This MOSFET is suitable for load switch and battery protection applications. Halogen-free devices are available.
Product Attributes
- Brand: Hymexa
- Product Code: HYG170N03LR1C2
- Package Type: PDFN8L(5x6)
- Certifications: RoHS compliant, Halogen-free
Technical Specifications
| Parameter | Test Conditions | Min | Typ. | Max | Unit |
|---|---|---|---|---|---|
| Absolute Maximum Ratings | |||||
| Drain-Source Voltage (VDSS) | Tc=25 Unless Otherwise Noted | - | - | 30 | V |
| Gate-Source Voltage (VGSS) | - | - | - | ±20 | V |
| Junction Temperature Range (TJ) | - | -55 | - | 175 | |
| Storage Temperature Range (TSTG) | - | -55 | - | 175 | |
| Continuous Drain Current (ID) | Tc=25 | - | - | 24 | A |
| Continuous Drain Current (ID) | Tc=100 | - | - | 17 | A |
| Pulsed Drain Current (IDM) | Tc=25 * | - | - | 60 | A |
| Maximum Power Dissipation (PD) | Tc=25 | - | - | 20 | W |
| Maximum Power Dissipation (PD) | Tc=100 | - | - | 10 | W |
| Thermal Resistance, Junction-to-Case (RJC) | - | - | 7.5 | - | /W |
| Thermal Resistance, Junction-to-Ambient (RJA) | ** | - | 45 | - | /W |
| Single Pulsed-Avalanche Energy (EAS) | L=0.1mH *** | - | 15 | - | mJ |
| Electrical Characteristics | |||||
| Drain-Source Breakdown Voltage (BVDSS) | VGS=0V, IDS=250A | 30 | - | - | V |
| Drain-to-Source Leakage Current (IDSS) | VDS=30V,VGS=0V | - | - | 1 | μA |
| Drain-to-Source Leakage Current (IDSS) | TJ=125 | - | - | 50 | μA |
| Gate Threshold Voltage (VGS(th)) | VDS=VGS, IDS=250A | 1 | 1.9 | 3 | V |
| Gate-Source Leakage Current (IGSS) | VGS=±20V,VDS=0V | - | ±100 | - | nA |
| Drain-Source On-State Resistance (RDS(ON)) | VGS=10V,IDS=6A | - | 14.5 | 17.0 | mΩ |
| Drain-Source On-State Resistance (RDS(ON)) | VGS=4.5V,IDS=4A | - | 21.5 | 26.0 | mΩ |
| Diode Forward Voltage (VSD*) | ISD=6A,VGS=0V | - | 0.8 | - | V |
| Reverse Recovery Time (trr) | ISD=6A,dISD/dt=100A/μs | - | 5.8 | - | ns |
| Reverse Recovery Charge (Qrr) | - | - | 1.7 | - | nC |
| Input Capacitance (Ciss) | VGS=0V, VDS=25V, Frequency=1.0MHz | - | 412 | - | pF |
| Output Capacitance (Coss) | - | - | 51 | - | pF |
| Reverse Transfer Capacitance (Crss) | - | - | 38 | - | pF |
| Turn-on Delay Time (td(ON)) | VDD=15V,RG=4Ω, IDS=6A,VGS=10V | - | 6.0 | - | ns |
| Turn-on Rise Time (Tr) | - | - | 17.1 | - | ns |
| Turn-off Delay Time (td(OFF)) | - | - | 12.1 | - | ns |
| Turn-off Fall Time (Tf) | - | - | 3.0 | - | ns |
| Total Gate Charge (Qg) | VDS =24V, VGS=10V, IDS=6A | - | 9.5 | 11.5 | nC |
| Total Gate Charge (Qg) | VDS =24V, VGS=4.5V, IDS=4A | - | 4.9 | 6.0 | nC |
| Gate-Source Charge (Qgs) | - | - | 1.9 | - | nC |
| Gate-Drain Charge (Qgd) | - | - | 2.2 | - | nC |
2410122028_HUAYI-HYG170N03LR1C2_C5121297.pdf
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