Battery Protection MOSFET HYG015N03LR1P N Channel Enhancement Mode with Low RDS ON and Reliability
Key Attributes
Model Number:
HYG015N03LR1P
Product Custom Attributes
Drain To Source Voltage:
30V
Current - Continuous Drain(Id):
170A
Operating Temperature -:
-55℃~+175℃
RDS(on):
2.4mΩ
Gate Threshold Voltage (Vgs(th)):
1.9V
Reverse Transfer Capacitance (Crss@Vds):
480pF
Number:
1 N-channel
Input Capacitance(Ciss):
5.05nF
Pd - Power Dissipation:
125W
Gate Charge(Qg):
104nC@10V
Mfr. Part #:
HYG015N03LR1P
Package:
TO-220FB-3L
Product Description
HYG015N03LR1/B N-Channel Enhancement Mode MOSFET
The HYG015N03LR1/B is a high-performance N-Channel Enhancement Mode MOSFET designed for power switching applications and battery protection. It features low on-resistance (RDS(ON)) of 1.8m(typ.) at VGS=10V and 2.4m(typ.) at VGS=4.5V, 100% avalanche tested for reliability, and is available in lead-free and green (RoHS compliant) versions.
Product Attributes
- Brand: HYM
- Origin: China (Huayi Microelectronics Co., Ltd.)
- Certifications: RoHS Compliant, Lead-Free, Green Devices Available
- Package Types: TO-220FB-3L, TO-263-2L
Technical Specifications
| Parameter | Test Conditions | HYG015N03LR1 | Unit | Min | Typ. | Max |
| Absolute Maximum Ratings | ||||||
| VDSS | Drain-Source Voltage | V | 30 | |||
| VGSS | Gate-Source Voltage | V | 20 | |||
| TJ | Junction Temperature Range | C | -55 | 175 | ||
| TSTG | Storage Temperature Range | C | -55 | 175 | ||
| ID | Continuous Drain Current (Tc=25C) | A | 170 | |||
| ID | Continuous Drain Current (Tc=100C) | A | 120 | |||
| IDM | Pulsed Drain Current (Tc=25C) | * | A | 680 | ||
| PD | Maximum Power Dissipation (Tc=25C) | W | 125 | |||
| PD | Maximum Power Dissipation (Tc=100C) | W | 62.5 | |||
| RJC | Thermal Resistance, Junction-to-Case | C/W | 1.2 | |||
| RJA | Thermal Resistance, Junction-to-Ambient | ** | C/W | 62.5 | ||
| EAS | Single Pulsed-Avalanche Energy (L=0.3mH) | *** | mJ | 406 | ||
| Static Characteristics | ||||||
| BVDSS | Drain-Source Breakdown Voltage (VGS=0V,IDS=250A) | V | 30 | - | - | |
| IDSS | Drain-to-Source Leakage Current (VDS=30V,VGS=0V) | A | - | - | 1.0 | |
| IDSS | Drain-to-Source Leakage Current (TJ=125C) | A | - | - | 50 | |
| VGS(th) | Gate Threshold Voltage (VDS=VGS, IDS=250A) | V | 1.0 | 1.9 | 3.0 | |
| IGSS | Gate-Source Leakage Current (VGS=20V,VDS=0V) | nA | - | - | 100 | |
| RDS(ON) | Drain-Source On-State Resistance (VGS=10V,IDS=40A) | * | m | - | 1.8 | 2.2 |
| RDS(ON) | Drain-Source On-State Resistance (VGS=4.5V,IDS=40A) | * | m | - | 2.4 | 3.0 |
| Diode Characteristics | ||||||
| VSD | Diode Forward Voltage (ISD=40A,VGS=0V) | * | V | - | 0.82 | 1.2 |
| trr | Reverse Recovery Time (ISD=40A,dISD/dt=100A/s) | ns | - | 24 | - | |
| Qrr | Reverse Recovery Charge | nC | - | 18.5 | - | |
| Dynamic Characteristics | ||||||
| RG | Gate Resistance (VGS=0V,VDS=0V,F=1MHz) | - | 2.1 | - | ||
| Ciss | Input Capacitance (VGS=0V, VDS=25V, F=1MHz) | pF | - | 5050 | - | |
| Coss | Output Capacitance | pF | - | 560 | - | |
| Crss | Reverse Transfer Capacitance | pF | - | 480 | - | |
| td(ON) | Turn-on Delay Time (VDD=15V,RG=2.5, IDS=40A,VGS=10V) | ns | - | 12 | - | |
| Tr | Turn-on Rise Time | ns | - | 110 | - | |
| td(OFF) | Turn-off Delay Time | ns | - | 71 | - | |
| Tf | Turn-off Fall Time | ns | - | 104 | - | |
| Gate Charge Characteristics | ||||||
| Qg(10V) | Total Gate Charge (VDS=24V, VGS=10V, ID=40A) | nC | - | 104 | - | |
| Qg(4.5V) | Total Gate Charge | nC | - | 54 | - | |
| Qgs | Gate-Source Charge | nC | - | 18 | - | |
| Qgd | Gate-Drain Charge | nC | - | 28 | - | |
2410121248_HUAYI-HYG015N03LR1P_C5121321.pdf
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