N Channel Enhancement Mode MOSFET with 40V 170A rating HUAYI HYG023N04LQ1P rugged switching device
Key Attributes
Model Number:
HYG023N04LQ1P
Product Custom Attributes
Drain To Source Voltage:
40V
Current - Continuous Drain(Id):
170A
Operating Temperature -:
-55℃~+175℃
RDS(on):
3.9mΩ@4.5V
Gate Threshold Voltage (Vgs(th)):
3V@250uA
Type:
N-Channel
Reverse Transfer Capacitance (Crss@Vds):
280pF
Number:
1 N-channel
Input Capacitance(Ciss):
9.832nF@0V
Pd - Power Dissipation:
166W
Gate Charge(Qg):
173.7nC
Mfr. Part #:
HYG023N04LQ1P
Package:
TO-220FB
Product Description
Product Overview
The HYG023N04LQ1P/B is an N-Channel Enhancement Mode MOSFET designed for switching applications. It offers high performance with a low on-state resistance (RDS(ON)) of 2.3 m (typ.) at VGS = 10V and 3.0 m (typ.) at VGS = 4.5V. This device is 100% avalanche tested, reliable, and rugged, with lead-free and green (RoHS compliant) options available.
Product Attributes
- Brand: Hymexa
- Origin: China (Huayi Microelectronics Co., Ltd.)
- Material: Lead-Free and Green Devices Available (RoHS Compliant)
- Certifications: RoHS Compliant, IPC/JEDEC J-STD-020 compliant for MSL classification
Technical Specifications
| Model | Feature | RDS(ON) @ VGS=10V (typ.) | RDS(ON) @ VGS=4.5V (typ.) | VDSS | ID (Tc=25C) | Package |
| HYG023N04LQ1P/B | N-Channel Enhancement Mode MOSFET, 40V/170A, 100% Avalanche Tested, Reliable and Rugged | 2.3 m | 3.0 m | 40 V | 170 A | TO-220FB-3L / TO-263-2L |
| Parameter | Test Conditions | Min | Typ. | Max | Unit |
| Static Characteristics | |||||
| BVDSS | VGS=0V,IDS= 250A | 40 | - | - | V |
| IDSS | VDS=40V,VGS=0V | - | - | 1 | A |
| IDSS (TJ=125C) | VDS=40V,VGS=0V | - | - | 50 | A |
| VGS(th) | VDS=VGS, IDS= 250A | 1 | 1.6 | 3 | V |
| IGSS | VGS=20V,VDS=0V | - | - | 100 | nA |
| RDS(ON) | VGS= 10V,IDS= 40A | - | 2.3 | 2.9 | m |
| RDS(ON) | VGS= 4.5V,IDS= 40A | - | 3.0 | 3.9 | m |
| Diode Characteristics | |||||
| VSD | ISD=40A,VGS=0V | - | 0.8 | 1.2 | V |
| trr | ISD=40A,dISD/dt=100A/s | - | 23 | - | ns |
| Qrr | ISD=40A,dISD/dt=100A/s | - | 17 | - | nC |
| Dynamic Characteristics | |||||
| RG | VGS=0V,VDS=0V,F=1MHz | - | 1.0 | - | |
| Ciss | VGS=0V, VDS= 25V, Frequency=1MHz | - | 9832 | - | pF |
| Coss | VGS=0V, VDS= 25V, Frequency=1MHz | - | 504 | - | pF |
| Crss | VGS=0V, VDS= 25V, Frequency=1MHz | - | 280 | - | pF |
| td(ON) | VDD= 20V,RG=4, IDS=40A,VGS= 10V | - | 17 | - | ns |
| Tr | VDD= 20V,RG=4, IDS=40A,VGS= 10V | - | 99 | - | ns |
| td(OFF) | VDD= 20V,RG=4, IDS=40A,VGS= 10V | - | 85 | - | ns |
| Tf | VDD= 20V,RG=4, IDS=40A,VGS= 10V | - | 110 | - | ns |
| Gate Charge Characteristics | |||||
| Qg | VDS = 32V, VGS= 10V, IDs= 40A | - | 173.7 | - | nC |
| Qgs | VDS = 32V, VGS= 10V, IDs= 40A | - | 35.2 | - | nC |
| Qgd | VDS = 32V, VGS= 10V, IDs= 40A | - | 36.9 | - | nC |
| Symbol | Parameter | Rating | Unit | Tc=25C Unless Otherwise Noted |
| Common Ratings | ||||
| VDSS | Drain-Source Voltage | 40 | V | - |
| VGSS | Gate-Source Voltage | 20 | V | - |
| TJ | Junction Temperature Range | -55 to 175 | C | - |
| TSTG | Storage Temperature Range | -55 to 175 | C | - |
| IS | Source Current-Continuous(Body Diode) | 170 | A | Mounted on Large Heat Sink |
| IDM | Pulsed Drain Current * | 650 | A | - |
| ID | Continuous Drain Current | 170 | A | Tc=25C |
| ID | Continuous Drain Current | 120 | A | Tc=100C |
| PD | Maximum Power Dissipation | 166 | W | Tc=25C |
| PD | Maximum Power Dissipation | 83 | W | Tc=100C |
| RJC | Thermal Resistance, Junction-to-Case | 0.9 | C/W | - |
| RJA | Thermal Resistance, Junction-to-Ambient ** | 62.5 | C/W | Surface mounted on 1in FR-4 board. |
| EAS | Single Pulsed-Avalanche Energy *** | 380 | mJ | L=0.3mH |
2409302203_HUAYI-HYG023N04LQ1P_C2895305.pdf
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