Power Management and Motor Control N Channel MOSFET HUAYI HYG050N08NS1C2 Featuring Low On Resistance
Key Attributes
Model Number:
HYG050N08NS1C2
Product Custom Attributes
Drain To Source Voltage:
80V
Current - Continuous Drain(Id):
100A
Operating Temperature -:
-55℃~+175℃
RDS(on):
5mΩ@10V
Gate Threshold Voltage (Vgs(th)):
4V@250uA
Type:
N-Channel
Reverse Transfer Capacitance (Crss@Vds):
25pF
Number:
1 N-channel
Pd - Power Dissipation:
93.7W
Input Capacitance(Ciss):
4.28nF@0V
Gate Charge(Qg):
68nC@10V
Mfr. Part #:
HYG050N08NS1C2
Package:
PPAK-8L(5x6)
Product Description
HYG050N08NS1C2 N-Channel Enhancement Mode MOSFET
The HYG050N08NS1C2 is an N-Channel Enhancement Mode MOSFET designed for switching applications, power management in inverter systems, and motor control. It offers a low on-resistance of 4.1 m (typ.) at VGS = 10V, 100% avalanche tested, and a reliable and rugged construction. Halogen-free and RoHS compliant versions are available.
Product Attributes
- Brand: HYG (HUAYI)
- Product Code: HYG050N08NS1C2
- Package Type: PPAK5*6-8L
- Certifications: RoHS Compliant, Halogen-Free
Technical Specifications
| Parameter | Symbol | Test Conditions | Min | Typ. | Max | Unit |
| Common Ratings (Tc=25C Unless Otherwise Noted) | ||||||
| Drain-Source Voltage | VDSS | 80 | V | |||
| Gate-Source Voltage | VGSS | 20 | V | |||
| Junction Temperature Range | TJ | -55 | 175 | C | ||
| Storage Temperature Range | TSTG | -55 | 175 | C | ||
| Source Current-Continuous (Body Diode) | IS | Tc=25C | 100 | A | ||
| Pulsed Drain Current | IDM | Tc=25C | 410 | A | ||
| Continuous Drain Current | ID | Tc=25C | 100 | A | ||
| Continuous Drain Current | ID | Tc=100C | 70.7 | A | ||
| Maximum Power Dissipation | PD | Tc=25C | 93.7 | W | ||
| Maximum Power Dissipation | PD | Tc=100C | 46.8 | W | ||
| Thermal Resistance, Junction-to-Case | RJC | 1.6 | C/W | |||
| Thermal Resistance, Junction-to-Ambient | RJA | Mounted on 1in FR-4 board | 35 | C/W | ||
| Single Pulsed-Avalanche Energy | EAS | L=0.3mH, VGS = 10V, Starting TJ=25C | 350 | mJ | ||
| Static Characteristics (Tc =25C Unless Otherwise Noted) | ||||||
| Drain-Source Breakdown Voltage | BVDSS | VGS=0V,IDS= 250A | 80 | - | - | V |
| Drain-to-Source Leakage Current | IDSS | VDS= 80V,VGS=0V | - | 1 | A | |
| Drain-to-Source Leakage Current | IDSS | TJ=125C, VDS= 80V,VGS=0V | - | 50 | A | |
| Gate Threshold Voltage | VGS(th) | VDS=VGS, IDS= 250A | 2 | 3 | 4 | V |
| Gate-Source Leakage Current | IGSS | VGS=20V,VDS=0V | - | 100 | nA | |
| Drain-Source On-State Resistance | RDS(ON) | VGS= 10V,IDS=20A | 4.1 | 5.0 | m | |
| Diode Characteristics | ||||||
| Diode Forward Voltage | VSD | ISD=20A,VGS=0V | 0.83 | 1.2 | V | |
| Reverse Recovery Time | trr | ISD=50A,dISD/dt=100A/s | 52 | - | ns | |
| Reverse Recovery Charge | Qrr | ISD=50A,dISD/dt=100A/s | 70 | - | nC | |
| Dynamic Characteristics (Tc =25C Unless Otherwise Noted) | ||||||
| Gate Resistance | RG | VGS=0V,VDS=0V,F=1MHz | 2.6 | - | ||
| Input Capacitance | Ciss | VGS=0V, VDS= 25V, Frequency=1.0MHz | 4280 | - | pF | |
| Output Capacitance | Coss | VGS=0V, VDS= 25V, Frequency=1.0MHz | 1770 | - | pF | |
| Reverse Transfer Capacitance | Crss | VGS=0V, VDS= 25V, Frequency=1.0MHz | 25 | - | pF | |
| Turn-on Delay Time | td(ON) | VDD= 40V,RG=4.0, IDS= 50A,VGS= 10V | 17 | - | ns | |
| Turn-on Rise Time | Tr | VDD= 40V,RG=4.0, IDS= 50A,VGS= 10V | 87 | - | ns | |
| Turn-off Delay Time | td(OFF) | VDD= 40V,RG=4.0, IDS= 50A,VGS= 10V | 47 | - | ns | |
| Turn-off Fall Time | Tf | VDD= 40V,RG=4.0, IDS= 50A,VGS= 10V | 101 | - | ns | |
| Gate Charge Characteristics | ||||||
| Total Gate Charge | Qg | VDS = 64V, VGS= 10V, IDs= 50A | 68 | - | nC | |
| Gate-Source Charge | Qgs | VDS = 64V, VGS= 10V, IDs= 50A | 22 | - | nC | |
| Gate-Drain Charge | Qgd | VDS = 64V, VGS= 10V, IDs= 50A | 17 | - | nC | |
2409271703_HUAYI-HYG050N08NS1C2_C3040445.pdf
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