Power Switching MOSFET HUAYI HYG170ND03LA1C1 Featuring 30V VDSS and Halogen Free RoHS Compliant Package
Key Attributes
Model Number:
HYG170ND03LA1C1
Product Custom Attributes
Drain To Source Voltage:
30V
Current - Continuous Drain(Id):
24A
RDS(on):
24.6mΩ@4.5V
Operating Temperature -:
-55℃~+150℃
Gate Threshold Voltage (Vgs(th)):
3V@250uA
Type:
N-Channel
Reverse Transfer Capacitance (Crss@Vds):
36pF
Number:
2 N-Channel
Pd - Power Dissipation:
17.8W
Input Capacitance(Ciss):
354pF
Gate Charge(Qg):
-
Mfr. Part #:
HYG170ND03LA1C1
Package:
DFN-8-EP(3x3)
Product Description
Product Overview
The HYG170ND03LA1C1 is a Dual N-Channel Enhancement Mode MOSFET designed for switching applications and power management in DC/DC converters. It offers a 30V drain-source voltage and a continuous drain current of 24A, with low on-resistance of 15.6 m (typ) at VGS=10V and 20.5 m (typ) at VGS=4.5V. This device is 100% avalanche tested, reliable, rugged, and available in Halogen Free and Green (RoHS Compliant) versions.
Product Attributes
- Brand: HYG (Huayi Microelectronics)
- Origin: China
- Certifications: RoHS Compliant, Halogen Free
- Package Type: DFN3*3-8L
- Ordering Code: HYG170ND03LA1C1
- Marking: C1 G170ND03 XYWXXXXXX
Technical Specifications
| Parameter | Test Conditions | Min | Typ. | Max | Unit |
| Absolute Maximum Ratings | |||||
| VDSS | (Tc=25C Unless Otherwise Noted) | 30 | V | ||
| VGSS | 20 | V | |||
| TJ | Junction Temperature Range | -55 | 150 | C | |
| TSTG | Storage Temperature Range | -55 | 150 | C | |
| ID | Continuous Drain Current, Tc=25C | 24 | A | ||
| ID | Continuous Drain Current, Tc=100C | 15.1 | A | ||
| IDM | Pulsed Drain Current, Tc=25C | 96 | A | ||
| PD | Maximum Power Dissipation, Tc=25C | 17.8 | W | ||
| PD | Maximum Power Dissipation, Tc=100C | 7.1 | W | ||
| RJC | Thermal Resistance, Junction-to-Case | 7 | C/W | ||
| RJA | Thermal Resistance, Junction-to-Ambient | 75 | C/W | ||
| EAS | Single Pulsed-Avalanche Energy, L=0.1mH | 10 | mJ | ||
| Electrical Characteristics | |||||
| BVDSS | Drain-Source Breakdown Voltage, VGS=0V, IDS=250A | 30 | V | ||
| IDSS | Drain-to-Source LeakageCurrent, VDS=30V,VGS=0V | 1 | A | ||
| IDSS | Drain-to-Source LeakageCurrent, TJ=125C | 50 | A | ||
| VGS(th) | Gate Threshold Voltage, VDS=VGS, IDS=250A | 1 | 1.6 | 3 | V |
| IGSS | Gate-Source Leakage Current, VGS=20V,VDS=0V | 100 | nA | ||
| RDS(ON) | Drain-Source On-State Resistance, VGS=10V,IDS=6A | 15.6 | 19 | m | |
| RDS(ON) | Drain-Source On-State Resistance, VGS=4.5V,IDS=4A | 20.5 | 24.6 | m | |
| VSD | Diode Forward Voltage, ISD=1A,VGS=0V | 0.7 | 1.0 | V | |
| trr | Reverse Recovery Time, ISD=6A,dISD/dt=100A/s | 8 | ns | ||
| Qrr | Reverse Recovery Charge | 19 | nC | ||
| Dynamic Characteristics | |||||
| RG | Gate Resistance, VGS=0V,VDS=0V,F=1 MHz | 2.0 | |||
| Ciss | Input Capacitance, VGS=0V, VDS=25V, Frequency=1.0MHz | 354 | pF | ||
| Coss | Output Capacitance | 59 | pF | ||
| Crss | Reverse Transfer Capacitance | 36 | pF | ||
| td(ON) | Turn-on Delay Time, VDD=10V,RG=4, IDS=6A,VGS=10V | 3.9 | ns | ||
| Tr | Turn-on Rise Time | 7.5 | ns | ||
| td(OFF) | Turn-off Delay Time | 15.6 | ns | ||
| Tf | Turn-off Fall Time | 4.6 | ns | ||
| Gate Charge Characteristics | |||||
| Qg | Total Gate Charge, VDS =24V, VGS=10V, ID=6A | 9 | nC | ||
| Qgs | Gate-Source Charge | 1.2 | nC | ||
| Qgd | Gate-Drain Charge | 2.3 | nC | ||
2410121314_HUAYI-HYG170ND03LA1C1_C2986722.pdf
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