Low On Resistance P Channel MOSFET HUAYI HYG120P06LR1C2 Designed for Switching and Battery Management
Key Attributes
Model Number:
HYG120P06LR1C2
Product Custom Attributes
Drain To Source Voltage:
60V
Current - Continuous Drain(Id):
55A
RDS(on):
11mΩ@10V
Operating Temperature -:
-55℃~+175℃
Gate Threshold Voltage (Vgs(th)):
2.5V@250uA
Type:
P-Channel
Reverse Transfer Capacitance (Crss@Vds):
198pF
Output Capacitance(Coss):
290pF
Input Capacitance(Ciss):
4.66nF
Pd - Power Dissipation:
75W
Gate Charge(Qg):
95nC@10V
Mfr. Part #:
HYG120P06LR1C2
Package:
PDFN-8L(5x6)
Product Description
Product Overview
The HYG120P06LR1C2 is a P-Channel Enhancement Mode MOSFET designed for switching applications and battery management. It features a low on-state resistance (RDS(ON)) of 11 m (typ.) at VGS = -10V and 15.5 m (typ.) at VGS = -4.5V. This device is 100% avalanche tested, reliable, rugged, and available in Halogen Free and Green (RoHS Compliant) versions.
Product Attributes
- Brand: HYG (Huayi Microelectronics Co., Ltd.)
- Package Type: PDFN5*6-8L
- Certifications: RoHS Compliant, Halogen Free, Green Devices Available
- Material: Matte tin plate termination finish
Technical Specifications
| Parameter | Test Conditions | Min | Typ | Max | Unit |
| Absolute Maximum Ratings | |||||
| Drain-Source Voltage (VDSS) | -60 | V | |||
| Gate-Source Voltage (VGSS) | 20 | V | |||
| Junction Temperature Range (TJ) | -55 | 175 | C | ||
| Storage Temperature Range (TSTG) | -55 | 175 | C | ||
| Drain Current-Continuous (IS) | Tc=25C | -55 | A | ||
| Pulsed Drain Current (IDM) | Tc=25C | -210 | A | ||
| Continuous Drain Current (ID) | Tc=25C | -55 | A | ||
| Continuous Drain Current (ID) | Tc=100C | -38.8 | A | ||
| Maximum Power Dissipation (PD) | Tc=25C | 75 | W | ||
| Maximum Power Dissipation (PD) | Tc=100C | 37.5 | W | ||
| Thermal Resistance, Junction-to-Case (RJC) | 2 | C/W | |||
| Thermal Resistance, Junction-to-Ambient (RJA) | **Surface mounted on FR-4 board. | 110 | C/W | ||
| Single Pulsed-Avalanche Energy (EAS) | ***L=0.3mH, starting TJ=25C, RG= 25, VGS = -10V. | 212 | mJ | ||
| Electrical Characteristics | |||||
| Drain-Source Breakdown Voltage (BVDSS) | VGS=0V,IDS=-250uA | -60 | V | ||
| Drain-to-Source Leakage Current (IDSS) | VDS=-60V, VGS=0V | -1 | uA | ||
| Drain-to-Source Leakage Current (IDSS) | TJ=125C, VDS=-60V, VGS=0V | -50 | uA | ||
| Gate Threshold Voltage (VGS(th)) | VDS=VGS, IDS=-250uA | -1.2 | -1.7 | -2.5 | V |
| Gate-Source Leakage Current (IGSS) | VGS=20V,VDS=0V | 100 | nA | ||
| Drain-Source On-state Resistance (RDS(ON)) | VGS=-10V,ID= -20A | 11 | 15 | m | |
| Drain-Source On-state Resistance (RDS(ON)) | VGS=-4.5V,ID= -20A | 15.5 | 20 | m | |
| Diode Forward Voltage (VSD) | ISD= -20A,VGS=0V | -0.83 | -1.2 | V | |
| Reverse Recovery Time (trr) | ISD= -20A,dI/dt=100A/us | 19.5 | ns | ||
| Reverse Recovery Charge (Qrr) | ISD= -20A,dI/dt=100A/us | 16 | nC | ||
| Dynamic Characteristics | |||||
| Gate Resistance (RG) | VGS=0V,VDS=0V ,F=1MHz | 12 | |||
| Input Capacitance (Ciss) | VGS=0V, VDS=-25V, Frequency=1.0MHz | 4660 | pF | ||
| Output Capacitance (Coss) | VGS=0V, VDS=-25V, Frequency=1.0MHz | 290 | pF | ||
| Reverse Transfer Capacitance (Crss) | VGS=0V, VDS=-25V, Frequency=1.0MHz | 198 | pF | ||
| Turn-on Delay Time (td(ON)) | VDD= -30V,RG=4, IDS= -20A,VGS=-10V | 10 | ns | ||
| Turn-on Rise Time (Tr) | VDD= -30V,RG=4, IDS= -20A,VGS=-10V | 48 | ns | ||
| Turn-off Delay Time (td(OFF)) | VDD= -30V,RG=4, IDS= -20A,VGS=-10V | 173 | ns | ||
| Turn-off Fall Time (Tf) | VDD= -30V,RG=4, IDS= -20A,VGS=-10V | 83 | ns | ||
| Gate Charge Characteristics | |||||
| Total Gate Charge (Qg) | VDS = -48V, VGS=-10V, ID= -20A | 95 | nC | ||
| Total Gate Charge (Qg) | VDS = -48V, VGS=-4.5V, ID= -20A | 47 | nC | ||
| Gate-Source Charge (Qgs) | VDS = -48V, VGS=-10V, ID= -20A | 19 | nC | ||
| Gate-Drain Charge (Qgd) | VDS = -48V, VGS=-10V, ID= -20A | 21 | nC | ||
2411220211_HUAYI-HYG120P06LR1C2_C2943994.pdf
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