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quality Versatile HXY MOSFET BT134-800E designed for operation in lighting heating and motor control circuits factory
quality Versatile HXY MOSFET BT134-800E designed for operation in lighting heating and motor control circuits factory

Versatile HXY MOSFET BT134-800E designed for operation in lighting heating and motor control circuits

Key Attributes
Model Number: BT134-800E
Product Custom Attributes
Holding Current (Ih):
30mA
Current - Gate Trigger(Igt):
10mA
Voltage - On State(Vtm):
1.65V
Average Gate Power Dissipation (PG(AV)):
500mW
Current - On State(It(RMS)):
4A
Peak Off - State Voltage(Vdrm):
800V
Current - Surge(Itsm@f):
20A
SCR Type:
1 TRIAC
Operating Temperature:
-40℃~+125℃
Gate Trigger Voltage (Vgt):
2V
Mfr. Part #:
BT134-800E
Package:
SOT-223-2L
Product Description

Product Overview

The BT134-800E is a glass-passivated triac in a plastic package, designed for applications requiring high bidirectional transient and blocking voltage capability with excellent thermal cycling performance. It is suitable for motor control, industrial and domestic lighting, heating, and static switching applications.

Product Attributes

  • Brand: HUAXUANYANG ELECTRONICS CO.,LTD
  • Origin: Shenzhen, China
  • Package: SOT-223-2L
  • Material: Plastic-Encapsulate
  • Marking: BT134-800E

Technical Specifications

Parameter Symbol Conditions Value Unit
Maximum Ratings VDRM /VRRM (Ta=25C unless otherwise noted) 800 V
Tj Junction Temperature -40 ~ 125 C
Tstg Storage Temperature -40 ~ 150 C
Electrical Characteristics IDRM,IRRM VDRM=VRRM T =25 j C 0.8 mA
VDRM=VRRM T =125 j C 0.8 mA
VGM Peak gate voltage - V
PGM Peak gate power - W
On-State Characteristics IT(RMS) RMS on-state current 16 A
ITSM Non repetitive surge peak on-state current t = 2ms T =25 j C 200 A
I t I t for fusing t = 10 ms 16 A s
VTM On-state voltage IT=2A,tp=380us 1.65 V
I GT Gate trigger current T2(+), G(+) VD=12V RL=100 10 mA
V GT Gate trigger voltage T2(-), G(+) VD=12V RL=100 2.5 V
IH Holding current V D=12V,IGT=100mA 30 mA
Commutation Characteristics (dl/dt)c Critical-rate of rise of commutation current A/ IG=2IGT tr100ns F=120Hz us 50 A/us
dV/dt Critical-rate of rise of commutating voltage VDM=V DRM T =125 j C 20 V/us
t gt Turn-on time ITM =16A ,VDM=V DRM VDM=67%V DRM(MA VDM=400V T =125 j C X) V/ IG =0.1A,dlG/dt=5A/uS 2 us

2508121550_HXY-MOSFET-BT134-800E_C50275354.pdf

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