Single N Channel Enhancement Mode MOSFET HUAYI HYG013N04NA1B6 with Construction and Battery Protection
Key Attributes
Model Number:
HYG013N04NA1B6
Product Custom Attributes
Drain To Source Voltage:
40V
Current - Continuous Drain(Id):
354A
RDS(on):
1.3mΩ@10V
Operating Temperature -:
-55℃~+175℃
Gate Threshold Voltage (Vgs(th)):
4V@250uA
Type:
N-Channel
Reverse Transfer Capacitance (Crss@Vds):
1.028nF
Input Capacitance(Ciss):
12.097nF
Pd - Power Dissipation:
326W
Gate Charge(Qg):
265nC@10V
Mfr. Part #:
HYG013N04NA1B6
Package:
TO-263-6
Product Description
Product Overview
The HYG013N04NA1B6 is a single N-Channel Enhancement Mode MOSFET designed for various applications. It features a low on-state resistance (RDS(ON)) of 1.1 m(typ.) at VGS = 10V, 100% avalanche tested, and a reliable, rugged construction. Halogen-free devices are also available. This MOSFET is suitable for load switches and lithium battery protection boards.
Product Attributes
- Brand: HYG (Huayi Microelectronics)
- Origin: China
- Certifications: RoHS compliant (lead-free and halogen-free)
Technical Specifications
| Parameter | Symbol | Test Conditions | Unit | Min | Typ. | Max |
| Absolute Maximum Ratings | ||||||
| Drain-Source Voltage | VDSS | Tc=25Unless Otherwise Noted | V | 40 | ||
| Gate-Source Voltage | VGSS | V | 20 | |||
| Junction Temperature Range | TJ | -55 | 175 | |||
| Storage Temperature Range | TSTG | -55 | 175 | |||
| Source Current-Continuous(Body Diode) | IS | Tc=25, Mounted on Large Heat Sink | A | 354 | ||
| Pulsed Drain Current | IDM | Tc=25 | A | 1440 | ||
| Continuous Drain Current | ID | Tc=25 | A | 354 | ||
| Continuous Drain Current | ID | Tc=100 | A | 250 | ||
| Maximum Power Dissipation | PD | Tc=25 | W | 326 | ||
| Maximum Power Dissipation | PD | Tc=100 | W | 163 | ||
| Thermal Resistance, Junction-to-Case | RJC | /W | 0.46 | |||
| Thermal Resistance, Junction-to-Ambient | RJA | Surface mounted on FR-4 board. | /W | 40.0 | ||
| Single Pulsed-Avalanche Energy | EAS | L=0.3mH, Limited by TJmax , starting TJ=25, L = 0.3mH, RG =25.,VGS =10V. | mJ | 1418 | ||
| Static Characteristics | ||||||
| Drain-Source Breakdown Voltage | BVDSS | VGS=0V,IDS=250A | V | 40 | ||
| Drain-to-Source Leakage Current | IDSS | VDS=40V,VGS=0V | A | 1 | ||
| Drain-to-Source Leakage Current | IDSS | TJ=125 | A | 50 | ||
| Gate Threshold Voltage | VGS(th) | VDS=VGS, IDS=250A | V | 2 | 2.7 | 4 |
| Gate-Source Leakage Current | IGSS | VGS=20V,VDS=0V | nA | 100 | ||
| Drain-Source On-State Resistance | RDS(ON) | VGS=10V,IDS=120A | m | 1.1 | 1.3 | |
| Diode Characteristics | ||||||
| Diode Forward Voltage | VSD* | ISD=120A,VGS=0V | V | 0.85 | 1.2 | |
| Reverse Recovery Time | trr | ISD=60A,dISD/dt=100A/s | ns | 41 | ||
| Reverse Recovery Charge | Qrr | nC | 39 | |||
| Dynamic Characteristics | ||||||
| Gate Resistance | RG | VGS=0V,VDS=0V,F=1MHz | 2.1 | |||
| Input Capacitance | Ciss | VGS=0V, VDS=25V, Frequency=1.0MHz | pF | 12097 | ||
| Output Capacitance | Coss | pF | 1613 | |||
| Reverse Transfer Capacitance | Crss | pF | 1028 | |||
| Turn-on Delay Time | td(ON) | VDD=20V,RG=4, IDS=60A,VGS=10V | ns | 38 | ||
| Turn-on Rise Time | Tr | ns | 225 | |||
| Turn-off Delay Time | td(OFF) | ns | 168 | |||
| Turn-off Fall Time | Tf | ns | 147 | |||
| Gate Charge Characteristics | ||||||
| Total Gate Charge | Qg | VDS =32V, VGS=10V, ID=120A | nC | 265 | ||
| Gate-Source Charge | Qgs | nC | 55 | |||
| Gate-Drain Charge | Qgd | nC | 94 | |||
2411220130_HUAYI-HYG013N04NA1B6_C2914364.pdf
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