Avalanche Tested N Channel Enhancement Mode MOSFET HUAYI HYG014N03LR1P Suitable for Inverter Systems
Key Attributes
Model Number:
HYG014N03LR1P
Product Custom Attributes
Drain To Source Voltage:
30V
Current - Continuous Drain(Id):
275A
RDS(on):
2.2mΩ@4.5V
Operating Temperature -:
-55℃~+175℃
Gate Threshold Voltage (Vgs(th)):
3V@250uA
Type:
N-Channel
Reverse Transfer Capacitance (Crss@Vds):
1.066nF
Number:
1 N-channel
Output Capacitance(Coss):
1.192nF
Input Capacitance(Ciss):
7.766nF
Pd - Power Dissipation:
167W
Gate Charge(Qg):
182.8nC@10V
Mfr. Part #:
HYG014N03LR1P
Package:
TO-220FB-3L
Product Description
HYG014N03LR1P/B N-Channel Enhancement Mode MOSFET
The HYG014N03LR1P/B is a high-performance N-Channel Enhancement Mode MOSFET designed for demanding applications. It features low on-resistance (RDS(ON) = 1.3m typical at VGS = 10V and 1.6m typical at VGS = 4.5V), 100% avalanche tested, and a reliable, rugged construction. Available in lead-free and green (RoHS compliant) versions, this MOSFET is ideal for battery protection and power management in inverter systems.
Product Attributes
- Brand: Hymexa
- Certifications: RoHS Compliant, Lead-Free, Green Devices Available
Technical Specifications
| Parameter | Test Conditions | Min | Typ. | Max | Unit |
|---|---|---|---|---|---|
| Absolute Maximum Ratings | |||||
| Drain-Source Voltage (VDSS) | Tc=25C Unless Otherwise Noted | - | - | 30 | V |
| Gate-Source Voltage (VGSS) | Tc=25C Unless Otherwise Noted | - | - | ±20 | V |
| Junction Temperature (TJ) | Tc=25C Unless Otherwise Noted | -55 | - | 175 | °C |
| Storage Temperature (TSTG) | Tc=25C Unless Otherwise Noted | -55 | - | 175 | °C |
| Source Current-Continuous (IS) | Tc=25°C, Mounted on Large Heat Sink | - | - | 275 | A |
| Pulsed Drain Current (IDM) | Tc=25°C | - | - | 1000 | A |
| Continuous Drain Current (ID) | Tc=25°C | - | - | 275 | A |
| Continuous Drain Current (ID) | Tc=100°C | - | - | 194 | A |
| Maximum Power Dissipation (PD) | Tc=25°C | - | - | 167 | W |
| Maximum Power Dissipation (PD) | Tc=100°C | - | - | 83 | W |
| Thermal Resistance (RJC) | Junction-to-Case | - | 0.9 | - | °C/W |
| Thermal Resistance (RJA) | Junction-to-Ambient ** | - | 62.5 | - | °C/W |
| Single Pulsed Avalanche Energy (EAS) | L=0.3mH *** | - | - | 900 | mJ |
| Electrical Characteristics | |||||
| Drain-Source Breakdown Voltage (BVDSS) | VGS=0V,IDS=250A | 30 | - | - | V |
| Drain-to-Source Leakage Current (IDSS) | VDS=30V,VGS=0V | - | - | 1 | μA |
| Drain-to-Source Leakage Current (IDSS) | TJ=125°C | - | - | 50 | μA |
| Gate Threshold Voltage (VGS(th)) | VDS=VGS, IDS=-250A | 1.0 | 1.3 | 3.0 | V |
| Gate-Source Leakage Current (IGSS) | VGS=±20V,VDS=0V | - | - | ±100 | nA |
| Drain-Source On-State Resistance (RDS(ON)) | VGS=10V,IDS=40A | - | 1.3 | 1.6 | mΩ |
| Drain-Source On-State Resistance (RDS(ON)) | VGS=4.5V,IDS=40A | - | 1.7 | 2.2 | mΩ |
| Diode Forward Voltage (VSD) | ISD=40A,VGS=0V | - | 0.78 | 1.2 | V |
| Reverse Recovery Time (trr) | ISD=40A,dISD/dt=100A/μs | - | 34 | - | ns |
| Reverse Recovery Charge (Qrr) | ISD=40A,dISD/dt=100A/μs | - | 29 | - | nC |
| Dynamic Characteristics | |||||
| Input Capacitance (Ciss) | VGS=0V, VDS=25V, Frequency=1.0MHz | - | 7766 | - | pF |
| Output Capacitance (Coss) | VGS=0V, VDS=25V, Frequency=1.0MHz | - | 1192 | - | pF |
| Reverse Transfer Capacitance (Crss) | VGS=0V, VDS=25V, Frequency=1.0MHz | - | 1066 | - | pF |
| Turn-on Delay Time (td(ON)) | VDD=15V,RG=2.5Ω, IDS=40A,VGS=10V | - | 16.0 | - | ns |
| Turn-on Rise Time (Tr) | VDD=15V,RG=2.5Ω, IDS=40A,VGS=10V | - | 109.3 | - | ns |
| Turn-off Delay Time (td(OFF)) | VDD=15V,RG=2.5Ω, IDS=40A,VGS=10V | - | 106.1 | - | ns |
| Turn-off Fall Time (Tf) | VDD=15V,RG=2.5Ω, IDS=40A,VGS=10V | - | 112.4 | - | ns |
| Gate Charge Characteristics | |||||
| Total Gate Charge (Qg) | VDS =24V, VGS=10V, IDs=40A | - | 182.8 | - | nC |
| Total Gate Charge (Qg) | VDS =24V, VGS=4.5V, IDs=40A | - | 96.8 | - | nC |
| Gate-Source Charge (Qgs) | VDS =24V, VGS=4.5V, IDs=40A | - | 23.9 | - | nC |
| Gate-Drain Charge (Qgd) | VDS =24V, VGS=4.5V, IDs=40A | - | 49.5 | - | nC |
2410121251_HUAYI-HYG014N03LR1P_C2904121.pdf
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