High Current N Channel MOSFET HUAYI HYG025N06LS2C2 Featuring Low On Resistance and Avalanche Testing
Key Attributes
Model Number:
HYG025N06LS2C2
Product Custom Attributes
Drain To Source Voltage:
60V
Current - Continuous Drain(Id):
160A
RDS(on):
4.3mΩ@4.5V
Operating Temperature -:
-55℃~+175℃
Gate Threshold Voltage (Vgs(th)):
3V@250uA
Type:
N-Channel
Reverse Transfer Capacitance (Crss@Vds):
43.7pF
Number:
1 N-channel
Output Capacitance(Coss):
1.122nF
Input Capacitance(Ciss):
4.248nF
Pd - Power Dissipation:
130W
Gate Charge(Qg):
69.7nC@10V
Mfr. Part #:
HYG025N06LS2C2
Package:
PDFN-8(5x6)
Product Description
Product Overview
The HYG025N06LS2C2 is a single N-Channel Enhancement Mode MOSFET designed for high-performance applications. It features a low on-state resistance of 2.3 m (typ.) at VGS = 10V and 3.5 m (typ.) at VGS = 4.5V, a continuous drain current of 160A, and is 100% avalanche tested for reliability. This robust device is suitable for high frequency point-of-load synchronous buck converters and power tool applications. Halogen-free devices are available and compliant with RoHS.
Product Attributes
- Brand: Hymexa
- Origin: China
- Certifications: RoHS Compliant, Halogen-Free
Technical Specifications
| Parameter | Symbol | Test Conditions | Unit | Min | Typ. | Max |
| Drain-Source Voltage | VDSS | V | 60 | |||
| Gate-Source Voltage | VGSS | V | 20 | |||
| Maximum Junction Temperature | TJ | C | 175 | |||
| Storage Temperature Range | TSTG | C | -55 | 175 | ||
| Source Current-Continuous (Body Diode) | IS | Tc=25C | A | 160 | ||
| Pulsed Drain Current | IDM | Tc=25C | A | 560 | ||
| Continuous Drain Current | ID | Tc=25C | A | 160 | ||
| Continuous Drain Current | ID | Tc=100C | A | 113 | ||
| Maximum Power Dissipation | PD | Tc=25C | W | 130 | ||
| Maximum Power Dissipation | PD | Tc=100C | W | 65.2 | ||
| Thermal Resistance, Junction-to-Case | RJC | C/W | 1.15 | |||
| Thermal Resistance, Junction-to-Ambient | RJA | C/W | 47 | |||
| Single Pulsed-Avalanche Energy | EAS | L=0.3mH | mJ | 349.1 | ||
| Drain-Source Breakdown Voltage | BVDSS | VGS=0V, IDS=250A | V | 60 | ||
| Drain-to-Source Leakage Current | IDSS | VDS=60V,VGS=0V | A | 1 | ||
| Drain-to-Source Leakage Current | IDSS | TJ=100C | A | 50 | ||
| Gate Threshold Voltage | VGS(th) | VDS=VGS, IDS=250A | V | 1.0 | 2.1 | 3.0 |
| Gate-Source Leakage Current | IGSS | VGS=20V,VDS=0V | nA | 100 | ||
| Drain-Source On-State Resistance | RDS(ON) | VGS=10V,IDS=20A | m | 2.3 | 2.8 | |
| Drain-Source On-State Resistance | RDS(ON) | VGS=4.5V,IDS=20A | m | 3.5 | 4.3 | |
| Diode Forward Voltage | VSD | ISD=20A,VGS=0V | V | 0.86 | 1.3 | |
| Reverse Recovery Time | trr | ISD=20A,dISD/dt=100A/s | ns | 43.6 | ||
| Reverse Recovery Charge | Qrr | nC | 55.3 | |||
| Gate Resistance | RG | VGS=0V,VDS=0V,F=1MHz | 0.69 | |||
| Input Capacitance | Ciss | VGS=0V, VDS=25V, Frequency=1.0MHz | pF | 4248 | ||
| Output Capacitance | Coss | pF | 1122 | |||
| Reverse Transfer Capacitance | Crss | pF | 43.7 | |||
| Turn-on Delay Time | td(ON) | VDD=30V,RG=2.5, IDS=20A,VGS=10V | ns | 15.6 | ||
| Turn-on Rise Time | Tr | ns | 33.1 | |||
| Turn-off Delay Time | td(OFF) | ns | 39.5 | |||
| Turn-off Fall Time | Tf | ns | 35.1 | |||
| Total Gate Charge | Qg10V | VDS =48V, VGS=10V, ID=20A | nC | 69.7 | ||
| Total Gate Charge | Qg4.5V | nC | 33.5 | |||
| Gate-Source Charge | Qgs | nC | 17.1 | |||
| Gate-Drain Charge | Qgd | nC | 11.9 |
2409302203_HUAYI-HYG025N06LS2C2_C2894736.pdf
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