High Current N Channel Enhancement Mode MOSFET HUAYI HY4504W with Low On Resistance and RoHS Compliance
Key Attributes
Model Number:
HY4504W
Product Custom Attributes
Drain To Source Voltage:
40V
Current - Continuous Drain(Id):
250A
Operating Temperature -:
-55℃~+175℃
RDS(on):
2.4mΩ@10V
Gate Threshold Voltage (Vgs(th)):
4V@250uA
Type:
N-Channel
Reverse Transfer Capacitance (Crss@Vds):
614pF
Number:
1 N-channel
Output Capacitance(Coss):
1.8nF
Input Capacitance(Ciss):
7.276nF
Pd - Power Dissipation:
336W
Gate Charge(Qg):
197nC@10V
Mfr. Part #:
HY4504W
Package:
TO-247A-3L
Product Description
Product Overview
The HY4504W/A is an N-Channel Enhancement Mode MOSFET designed for power management in inverter systems. It offers high performance with a 40V/250A rating, low on-resistance of 2.0 m (typ.) at VGS=10V, and is avalanche rated for reliability and ruggedness. Halogen-free and green device options are available, complying with RoHS standards.
Product Attributes
- Brand: HYMEXA
- Certifications: RoHS Compliant, Halogen Free, Green Device Available
- Package Options: TO-3P-3L (W), TO-247A-3L (A)
Technical Specifications
| Parameter | Condition | Min | Typ | Max | Unit |
|---|---|---|---|---|---|
| Absolute Maximum Ratings | |||||
| Drain-Source Voltage (VDSS) | 40 | V | |||
| Gate-Source Voltage (VGS) | 20 | V | |||
| Maximum Junction Temperature (TJ) | 175 | C | |||
| Storage Temperature Range (TSTG) | -55 | 175 | C | ||
| Diode Continuous Forward Current (IS) | TC=25C, Mounted on Large Heat Sink | 250 | A | ||
| Continuous Drain Current (ID) | TC=25C | 250 | A | ||
| Continuous Drain Current (ID) | TC=100C | 172 | A | ||
| Maximum Power Dissipation (PD) | TC=25C | 336 | W | ||
| Maximum Power Dissipation (PD) | TC=100C | 168 | W | ||
| Avalanche Energy (EAS) | L=0.3mH | 860 | mJ | ||
| Electrical Characteristics | |||||
| Drain-Source Breakdown Voltage (BVDSS) | VGS=0V, IDS=250A | 40 | V | ||
| Zero Gate Voltage Drain Current (IDSS) | VDS=40V, VGS=0V | 1 | A | ||
| Zero Gate Voltage Drain Current (IDSS) | TJ=85C | 10 | A | ||
| Gate Threshold Voltage (VGS(th)) | VDS=VGS, IDS=250A | 2 | 3 | 4 | V |
| Gate Leakage Current (IGSS) | VGS=20V, VDS=0V | 100 | nA | ||
| Drain-Source On-state Resistance (RDS(ON)) | VGS=10V, IDS=125A | 2.0 | 2.4 | m | |
| Diode Forward Voltage (VSD) | ISD=125A, VGS=0V | 0.8 | 1.2 | V | |
| Reverse Recovery Time (trr) | 40 | ns | |||
| Reverse Recovery Charge (Qrr) | ISD=125A, dlSD/dt=100A/s | 63 | nC | ||
| Input Capacitance (Ciss) | VGS=0V, VDS=25V, Frequency=1.0MHz | 7276 | pF | ||
| Output Capacitance (Coss) | VGS=0V, VDS=25V, Frequency=1.0MHz | 1800 | pF | ||
| Reverse Transfer Capacitance (Crss) | VGS=0V, VDS=25V, Frequency=1.0MHz | 360 | pF | ||
| Turn-on Delay Time (td(ON)) | VDD=20V, RG=6, IDS=125A, VGS=10V | 36 | ns | ||
| Turn-on Rise Time (tr) | VDD=20V, RG=6, IDS=125A, VGS=10V | 63 | ns | ||
| Turn-off Delay Time (td(OFF)) | VDD=20V, RG=6, IDS=125A, VGS=10V | 45 | ns | ||
| Turn-off Fall Time (tf) | VDD=20V, RG=6, IDS=125A, VGS=10V | 63 | ns | ||
| Total Gate Charge (Qg) | VDS=32V, VGS=10V, IDS=125A | 197 | nC | ||
| Gate-Source Charge (Qgs) | VDS=32V, VGS=10V, IDS=125A | 31 | nC | ||
| Gate-Drain Charge (Qgd) | VDS=32V, VGS=10V, IDS=125A | 81 | nC | ||
2409302302_HUAYI-HY4504W_C358119.pdf
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