High Current Power MOSFET HUAYI HYG025N06LS2B with 60 Volt Drain Source Voltage and Low On Resistance
Key Attributes
Model Number:
HYG025N06LS2B
Product Custom Attributes
Drain To Source Voltage:
60V
Current - Continuous Drain(Id):
145A
Operating Temperature -:
-55℃~+175℃
RDS(on):
5.2mΩ@4.5V
Gate Threshold Voltage (Vgs(th)):
3V@250uA
Type:
N-Channel
Reverse Transfer Capacitance (Crss@Vds):
10pF
Number:
1 N-channel
Output Capacitance(Coss):
1.101nF
Input Capacitance(Ciss):
4.381nF
Pd - Power Dissipation:
125W
Gate Charge(Qg):
69.8nC@10V
Mfr. Part #:
HYG025N06LS2B
Package:
TO-263-2L
Product Description
Product Overview
The HYG025N06LS2P/B is a single N-Channel Enhancement Mode MOSFET designed for high-performance applications. It features low on-resistance (RDS(ON)) at various gate-source voltages, 100% avalanche tested, and is available in lead-free (RoHS Compliant) versions. This MOSFET is ideal for high-frequency point-of-load synchronous buck converters and power tool applications.
Product Attributes
- Brand: HYG (Huayi Microelectronics Co., Ltd.)
- Origin: China
- Certifications: RoHS Compliant, Halogen Free
Technical Specifications
| Part Number | Package | VDS (V) | ID (A) | RDS(ON) (m) @ VGS=10V (typ.) | RDS(ON) (m) @ VGS=4.5V (typ.) | Avalanche Energy (mJ) |
| HYG025N06LS2P/B | TO-220FB-3L | 60 | 145 | 2.8 | 4.1 | 294.5 |
| HYG025N06LS2P/B | TO-263-2L | 60 | 145 | 2.8 | 4.1 | 294.5 |
2409302203_HUAYI-HYG025N06LS2B_C2874973.pdf
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