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quality NPN RF Bipolar Transistor Infineon BFP740H6327 Designed for in Satellite and Multimedia Applications factory
quality NPN RF Bipolar Transistor Infineon BFP740H6327 Designed for in Satellite and Multimedia Applications factory

NPN RF Bipolar Transistor Infineon BFP740H6327 Designed for in Satellite and Multimedia Applications

Key Attributes
Model Number: BFP740H6327
Product Custom Attributes
Emitter-Base Voltage(Vebo):
1.2V
Current - Collector Cutoff:
40nA
Pd - Power Dissipation:
160mW
Transition Frequency(fT):
44GHz
Type:
NPN
Number:
1 NPN
Current - Collector(Ic):
45mA
Collector - Emitter Voltage VCEO:
4V
Operating Temperature:
-55℃~+150℃
Mfr. Part #:
BFP740H6327
Package:
SOT-343-4
Product Description

Product Overview

The BFP740 is a wideband NPN RF heterojunction bipolar transistor (HBT) designed for high-performance applications. It offers a low noise figure, high gain, and excellent linearity, making it suitable for a wide range of wireless communication, satellite, multimedia, and ISM applications.

Product Attributes

  • Brand: Infineon
  • Technology: SiGe:C
  • Device Type: NPN RF bipolar transistor
  • Product Validation: Qualified for industrial applications according to JEDEC47/20/22.
  • ESD Sensitive: Yes

Technical Specifications

ParameterSymbolValuesUnitNote or test condition
Absolute Maximum Ratings
Collector emitter voltageVCEO4.0VOpen base, TA = 25 C
Collector emitter voltageVCES13VE-B short circuited
Collector base voltageVCBO13VOpen emitter
Emitter base voltageVEBO1.2VOpen collector
Base currentIB4mA
Collector currentIC45mA
Total power dissipationPtot160mWTS 100 C
Junction temperatureTJ150C
Storage temperatureTStg-55 to 150C
Thermal Characteristics
Junction - soldering point thermal resistanceRthJS310K/W
DC Characteristics
Collector emitter breakdown voltageV(BR)CEO4.0 / 4.7VIC = 1 mA, IB = 0, open base
Collector emitter leakage currentICES1 / 400nAVCE = 13 V, VBE = 0 / VCE = 5 V, VBE = 0, E-B short circuited
Collector base leakage currentICBO1 / 40nAVCB = 5 V, IE = 0, open emitter
Emitter base leakage currentIEBO1 / 40nAVEB = 0.5 V, IC = 0, open collector
DC current gainhFE160 to 400VCE = 3 V, IC = 25 mA, pulse measured
General AC Characteristics
Transition frequencyfT44GHzVCE = 3 V, IC = 25 mA, f = 2 GHz
Collector base capacitanceCCB0.08pFVCB = 3 V, VBE = 0, f = 1 MHz, emitter grounded
Collector emitter capacitanceCCE0.35pFVCE = 3 V, VBE = 0, f = 1 MHz, base grounded
Emitter base capacitanceCEB0.45pFVEB = 0.5 V, VCB = 0, f = 1 MHz, collector grounded
Frequency Dependent AC Characteristics (VCE = 3 V, ZS = ZL = 50 )
ParameterSymbolf = 450 MHzf = 900 MHzf = 1.5 GHzf = 1.9 GHzf = 2.4 GHzf = 3.5 GHzf = 5.5 GHzUnitNote or test condition
Maximum power gainGms31.5282625242219.5dBIC = 15 mA
Minimum noise figureNFmin0.450.450.50.50.550.650.85dBIC = 6 mA
3rd order intercept point at outputOIP32222.52324.524.525.524.5dBmIC = 15 mA

2410121608_Infineon-BFP740H6327_C439776.pdf

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